Search results for "11"

showing 10 items of 17291 documents

Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

2012

Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…

010302 applied physicsMaterials scienceta114General Chemical EngineeringAnalytical chemistrychemistry.chemical_element02 engineering and technologyGeneral Chemistry021001 nanoscience & nanotechnology01 natural sciencesOxygenAmorphous solidElastic recoil detectionAtomic layer depositionchemistry0103 physical sciencesMaterials ChemistryThermal stabilityThin film0210 nano-technologyta116Volatility (chemistry)High-κ dielectricChemistry of Materials
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Atomic Layer Deposition of Osmium

2011

Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…

010302 applied physicsMaterials scienceta114General Chemical EngineeringInorganic chemistryAnalytical chemistryNucleationchemistry.chemical_element02 engineering and technologyGeneral ChemistryChemical vapor deposition021001 nanoscience & nanotechnologyOsmocene01 natural scienceschemistry.chemical_compoundAtomic layer depositionCarbon filmchemistry0103 physical sciencesMaterials ChemistryDeposition (phase transition)OsmiumThin film0210 nano-technologyta116Chemistry of Materials
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The effect of cavity tuning on oxygen beam currents of an A-ECR type 14 GHz electron cyclotron resonance ion source.

2016

The efficiency of the microwave-plasma coupling plays a significant role in the production of highly charged ion beams with electron cyclotron resonance ion sources (ECRISs). The coupling properties are affected by the mechanical design of the ion source plasma chamber and microwave launching system, as well as damping of the microwave electric field by the plasma. Several experiments attempting to optimize the microwave-plasma coupling characteristics by fine-tuning the frequency of the injected microwaves have been conducted with varying degrees of success. The inherent difficulty in interpretation of the frequency tuning results is that the effects of microwave coupling system and the ca…

010302 applied physicsMaterials scienceta114Highly charged ionPlasma01 natural sciencesElectron cyclotron resonanceIon sourcemicrowaves010305 fluids & plasmasIonmikroaallotPhysics::Plasma Physics0103 physical scienceselectron cyclotron resonance ion sourcesplasma chamberAtomic physicsInstrumentationBeam (structure)MicrowaveMicrowave cavityThe Review of scientific instruments
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Kinetic instabilities in pulsed operation mode of a 14 GHz electron cyclotron resonance ion source

2016

The occurrence of kinetic plasma instabilities is studied in pulsed operation mode of a 14 GHz Aelectron cyclotron resonance type electron cyclotron resonance ion source. It is shown that the temporal delay between the plasma breakdown and the appearance of the instabilities is on the order of 10- 100 ms. The most important parameters affecting the delay are magnetic field strength and neutral gas pressure. It is demonstrated that kinetic instabilities limit the high charge state ion beam production in the unstable operating regime. peerReviewed

010302 applied physicsMaterials scienceta114Ion beamCyclotron resonancePlasma01 natural sciencesplasma electronsIon sourceElectron cyclotron resonanceFourier transform ion cyclotron resonance010305 fluids & plasmasMagnetic fieldpulsed operation modePhysics::Plasma Physics0103 physical scienceselectron cyclotron resonance ion sourceskinetic instabilitiesAtomic physicsInstrumentationIon cyclotron resonanceReview of Scientific Instruments
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Recent improvements of the LPSC charge breeder

2017

International audience; PSC has developed the PHOENIX electron cyclotron resonance Charge Breeder since 2000. The performances have been improved over time acting on the 1+ and N+ beam optics, the base vacuum and the 1+ beam injection. A new objective is to update the booster design to enhance high charge state production and 1+ N+ efficiencies, reduce the co-extracted background beam and improve the ion source tunability. The first step, consisting in increasing the peak magnetic field at injection from 1.2 T to 1.6 T was implemented and significant improvement in 1+N+ efficiencies are reported: 12.9% of 23Na8+, 24.2% of 40Ar8+, 13.3% of 132Xe26+ and 13% of 133Cs26+. The next steps of the …

010302 applied physicsMaterials scienceta114Nuclear engineering[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]syklotronitCharge (physics)plasmatekniikka01 natural sciences7. Clean energy010305 fluids & plasmaselectron cyclotron resonanceBreeder (animal)0103 physical sciencesplasma
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Photoelectron Emission from Metal Surfaces Induced by Radiation Emitted by a 14 GHz Electron Cyclotron Resonance Ion Source

2015

Photoelectron emission measurements have been performed using a room-temperature 14 GHz ECR ion source. It is shown that the photoelectron emission from Al, Cu, and stainless steel (SAE 304) surfaces, which are common plasma chamber materials, is predominantly caused by radiation emitted from plasma with energies between 8 eV and 1 keV. Characteristic X-ray emission and bremsstrahlung from plasma have a negligible contribution to the photoelectron emission. It is estimated from the measured data that the maximum conceivable photoelectron flux from plasma chamber walls is on the order of 10% of the estimated total electron losses from the plasma. peerReviewed

010302 applied physicsMaterials scienceta114Physics::Instrumentation and DetectorsAstrophysics::High Energy Astrophysical PhenomenaCyclotron resonanceBremsstrahlungFOS: Physical sciencesPlasmaElectronphotoelectron emissionRadiation01 natural sciences7. Clean energyElectron cyclotron resonanceIon sourcePhysics - Plasma Physics010305 fluids & plasmasPlasma Physics (physics.plasm-ph)Physics::Plasma Physics0103 physical scienceselectron cyclotron resonance ion sourcesPlasma diagnosticsAtomic physicsInstrumentation
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Deviation of H− beam extraction simulation model

2018

Negative hydrogen ion source extraction system development is dependent on accurate and fast simulation methods for modelling the behaviour of ion and electron beams. Traditionally this type of work has been done using ray-tracing extraction codes, such as IBSimu. The plasma extraction model in IBSimu has been observed to under-estimate the charge density near the plasma sheath, leading to incorrect prediction of the current at which the system produces the optimum emittance. It is suspected that this deviation results from the approximations made by the model, neglecting the magnetic field and collisional effects near the sheath region. Results and comparisons to simulations are presented …

010302 applied physicsMaterials scienceta114business.industryExtraction (chemistry)tietokonegrafiikkaplasmafysiikka01 natural sciencesOpticsion sourcesPhysics::Plasma Physicscomputer graphics0103 physical sciencessimulointi010306 general physicsbusinessBeam (structure)plasma sheaths
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Power efficiency improvements with the radio frequency H− ion source

2016

CW 13.56 MHz radio frequency-driven H(-) ion source is under development at the University of Jyväskylä for replacing an existing filament-driven ion source at the MCC30/15 cyclotron. Previously, production of 1 mA H(-) beam, which is the target intensity of the ion source, has been reported at 3 kW of RF power. The original ion source front plate with an adjustable electromagnet based filter field has been replaced with a new front plate with permanent magnet filter field. The new structure is more open and enables a higher flux of ro-vibrationally excited molecules towards the plasma electrode and provides a better control of the potential near the extraction due to a stronger separation …

010302 applied physicsMaterials scienceta114ta213Electromagnetbusiness.industryRF power amplifierCyclotronPlasma01 natural sciencesIon sourcelaw.inventionion sourceslawMagnet0103 physical sciencesOptoelectronicsRadio frequencypower efficiency010306 general physicsbusinessInstrumentationElectrical efficiencyReview of Scientific Instruments
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New progress of high current gasdynamic ion source (invited).

2016

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller’s ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 1013 cm−3 ) …

010302 applied physicsMaterials scienceta114ta213ion beamsPlasma01 natural sciencesIon sourceElectron cyclotron resonance010305 fluids & plasmaslaw.inventionIonlawGyrotronIonizationgasdynamic ECRIS0103 physical scienceselectron cyclotron resonance ion sourcesThermal emittanceAtomic physicsInstrumentationMicrowaveThe Review of scientific instruments
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Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors

2013

Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…

010302 applied physicsMaterials scienceta214ta114Band gapGeneral Chemical EngineeringAnalytical chemistryLithium fluoride02 engineering and technologyGeneral ChemistryAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesElastic recoil detectionchemistry.chemical_compoundAtomic layer depositionchemistryImpurity0103 physical sciencesMaterials ChemistryThin film0210 nano-technologySpectroscopyChemistry of Materials
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