Search results for "130nm"
showing 3 items of 3 documents
3D Integration : towards high-performance innovative imaging sensors
2017
Nowadays, CMOS image sensors are almost exclusively architectured around analog pixels. A transition to purely digital pixels would significantly improve the performances of imagers. Unfortunately, such an approach is difficult to consider because it causes an oversized and unusable pixel for the consumer market. One of the promising ways to solve this problem of pixel integration is to think not only in 2D dimensions, but in 3D dimensions by distributing the different functionalities on several interconnected wafers.Thus, the work presented in this manuscript describes the design of a purely digital image sensor in CMOS 3D-IC 130 nm Tezzaron technology. This sensor is architectured around …
Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
2016
International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
2015
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.