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RESEARCH PRODUCT

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Frédéric SaignéHelmut PuchnerAlexandre Louis BosserViyas GuptaAli ZadehGeorgios TsiligiannisLuigi DililloAri VirtanenArto JavanainenFrédéric Wrobel

subject

ImaginationNuclear and High Energy PhysicsHeavy ion radiationMaterials science130 nmmedia_common.quotation_subject[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesFluence[SPI]Engineering Sciences [physics]0103 physical sciencesStatic testingSensitivity (control systems)Electrical and Electronic Engineeringradiation testingSimulationmedia_common010302 applied physicssingle event upset (SEU)ta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)FerroelectricityNon-volatile memoryRadiation testingFRAM130nm technologyNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testing

description

International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

https://doi.org/10.1109/tns.2016.2559943