6533b7d0fe1ef96bd125a612

RESEARCH PRODUCT

Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

Arto JavanainenGeorgios TsiligiannisHelmut PuchnerLuigi DililloAlexandre Louis BosserViyas GuptaFrédéric SaignéFrédéric WrobelAri VirtanenAli Zadeh

subject

Ionizing radiation[PHYS]Physics [physics]010302 applied physicsRandom access memoryMaterials scienceHeavy ion radiationta114ta213010308 nuclear & particles physics01 natural sciencestest conditions[SPI.TRON]Engineering Sciences [physics]/ElectronicsNon-volatile memoryMultiple Cell Upset (MCU)FRAM0103 physical sciencesStatic testingElectronic engineeringSensitivity (control systems)radiation testing130nmSingle Event Upset (SEU)static and dynamic mode testingSimulation

description

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

10.1109/radecs.2015.7365617https://doi.org/10.1109/RADECS.2015.7365617