Search results for "2S"

"Table 12" of "Measurement of Upsilon production in 7 TeV pp collisions at ATLAS"

2013

Ratio of Upsilon(2S) and Upsilon(3S) to Upsilon(1S) inclusive cross-section as a function of Upsilon rapidity (|y|) in Upsilon pT 0 - 70 GeV. The first uncertainty is statistical, the second is systematic.

"Table 2" of "Antideuteron production in $\Upsilon(nS)$ decays and in $e^+e^- \to q\overline{q}$ at $\sqrt{s} \approx 10.58 \mathrm{\,Ge\kern -0.1em …

2014

The rate of antideuteron production from the decay of UPSILON(2S).

Sulfuric Acid Caves of Italy: An Overview

2016

"Table 1" of "Study of $\psi$ decays to the $\Xi^{-}\bar\Xi^{+}$ and $\Sigma(1385)^{\mp}\bar\Sigma(1385)^{\pm}$ final states"

2017

The number of the observed events $N_\rm{obs.}$, efficiencies $\epsilon$, $\alpha$ values, and branching fractions ${\cal B}$ for $\psi\rightarrow\Xi^{-}\bar\Xi^{+}$, $\Sigma(1385)^{\mp}\bar\Sigma(1385)^{\pm}$. Only statistical uncertainties are indicated.

Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires

2017

Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

Sulfidation Mechanism of Pure and Cu-Doped ZnO Nanoparticles at Moderate Temperature: TEM and In Situ XRD Studies

2012

International audience; Sulfidation mechanism of pure and Cu-doped ZnO nanoparticles (Cu0.03Zn0.97O and Cu0.06Zn0.94O) at 250 and 350 degrees C was studied by transmission electron microscopy (TEM) and in situ synchrotron XRD. For nondoped ZnO, we observed by TEM that partial reaction with H2S is accompanied by the formation of voids at the ZnO/ZnS interface. This phenomenon (known as the Kirkendall effect) confirms that sulfidation of nanosized ZnO by gaseous H2S proceeds via the outward growth of ZnS: Zn2+ and O2- are transferred to the external (ZnS/gas) surface, where zinc is combined with sulfur and oxygen reacts with protons yielding H2O. During sulfidation of Cu-doped ZnO, the caviti…

Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

2019

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Mid-infrared 2000-nm bandwidth supercontinuum generation in suspended-core microstructured Sulfide and Tellurite optical fibers

2012

International audience; In this work, we report the experimental observation of supercontinua generation in two kinds of suspended-core microstructured soft-glass optical fibers. Low loss, highly nonlinear, tellurite and As2S3 chalcogenide fibers have been fabricated and pumped close to their zero-dispersion wavelength in the femtosecond regime by means of an optical parametric oscillator pumped by a Ti:Sapphire laser. When coupled into the fibers, the femtosecond pulses result in 2000-nm bandwidth supercontinua reaching the Mid-Infrared region and extending from 750 nm to 2.8 mu m in tellurite fibers and 1 mu m to 3.2 mu m in chalcogenide fibers, respectively.

Space charge limited current mechanism in Bi2S3 nanowires

2016

We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

2019

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …