Search results for "302"

showing 10 items of 27399 documents

Determination of refractive index of submicron-thick films using resonance shift in a four-layer slab waveguide

2017

The measurement of refractive index of very thin films at the order of ten to hundred nanometers is cumbersome and usually requires employing sophisticated techniques such as the spectral ellipsometry. In this paper we describe a simple contact method for measuring the refractive index of thin films. Here we have used the prism-coupling technique for characterizing samples prepared as four-layer slab waveguides. The waveguide resonance condition can be calculated by solving simple analytic transcendental equations for the slab waveguide. Then the captured mode position as a function of cladding thickness is used for probing the refractive index of cladding layer. We used indium-tin-oxide la…

010302 applied physicsMaterials sciencebusiness.industryTranscendental equationPhysics::Optics02 engineering and technology021001 nanoscience & nanotechnologyCladding (fiber optics)01 natural scienceslaw.inventionOpticsEllipsometrylaw0103 physical sciencesSlabThin film0210 nano-technologybusinessStep-index profileRefractive indexWaveguideSPIE Proceedings
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Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

010302 applied physicsMaterials sciencebusiness.industryTransistorElectrical breakdownAlgan gan02 engineering and technologyTrappingConverters021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic Materialslaw.inventionDynamic resistancelaw0103 physical sciencesMaterials ChemistryOptoelectronicsElectronicsElectrical and Electronic Engineering0210 nano-technologybusinessSaturation (magnetic)Semiconductor Science and Technology
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Crystalline phase detection in glass ceramics by EPR spectroscopy

2018

The advances of EPR spectroscopy for the detection of activators as well as determining their local structure in the crystalline phase of glass ceramics is considered. The feasibility of d-element (Mn2+, Cu2+) and f-element (Gd3+, Eu2+) ion probes for the investigation of glass ceramics is discussed. In the case of Mn2+, the information is obtained from the EPR spectrum superhyperfine structure, for Gd3+ and Eu2+ probes – from the EPR spectrum fine structure, whereas for Cu2+ ions the changes in the EPR spectrum shape could be useful. The examples of EPR spectra of the above-mentioned probes in oxyfluoride glass ceramics are illustrated. ----/ / /---- This is the preprint version of the fol…

010302 applied physicsMaterials scienceglass ceramicsPhysics and Astronomy (miscellaneous)Динамика кристаллической решеткиGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesLocal structureSpectral lineIonlaw.inventionelectron paramagnetic resonancelawparamagnetic ionsPhase (matter)visual_art0103 physical sciencesvisual_art.visual_art_medium:NATURAL SCIENCES:Physics [Research Subject Categories]Physical chemistryCeramic0210 nano-technologyElectron paramagnetic resonanceLow Temperature Physics
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Deformation of bubbles in silicon gel insulation under an alternating electric field

2019

The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…

010302 applied physicsMaterials scienceinsulationreliabilityDeformation (mechanics)020209 energyBubbleHigh voltage02 engineering and technologyDielectric01 natural sciencesSpace chargeIGBTSilicone gelStress (mechanics)chemistry.chemical_compoundpartial dischargeSettore ING-IND/31 - ElettrotecnicaSiliconechemistryElectric field0103 physical sciences0202 electrical engineering electronic engineering information engineeringComposite material
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Spectroscopic study of ion temperature in minimum-B ECRIS plasma

2019

Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …

010302 applied physicsMaterials scienceionitPlasma spectroscopyspektroskopiaAnalytical chemistryIon temperaturePlasmaCondensed Matter Physics7. Clean energy01 natural sciences010305 fluids & plasmasPhysics::Plasma Physicsion temperature0103 physical scienceslämpötilaspectroscopic studyOptical emission spectroscopyDoppler broadeningPlasma Sources Science and Technology
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Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

2012

Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…

010302 applied physicsMaterials scienceta114General Chemical EngineeringAnalytical chemistrychemistry.chemical_element02 engineering and technologyGeneral Chemistry021001 nanoscience & nanotechnology01 natural sciencesOxygenAmorphous solidElastic recoil detectionAtomic layer depositionchemistry0103 physical sciencesMaterials ChemistryThermal stabilityThin film0210 nano-technologyta116Volatility (chemistry)High-κ dielectricChemistry of Materials
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Atomic Layer Deposition of Osmium

2011

Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…

010302 applied physicsMaterials scienceta114General Chemical EngineeringInorganic chemistryAnalytical chemistryNucleationchemistry.chemical_element02 engineering and technologyGeneral ChemistryChemical vapor deposition021001 nanoscience & nanotechnologyOsmocene01 natural scienceschemistry.chemical_compoundAtomic layer depositionCarbon filmchemistry0103 physical sciencesMaterials ChemistryDeposition (phase transition)OsmiumThin film0210 nano-technologyta116Chemistry of Materials
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The effect of cavity tuning on oxygen beam currents of an A-ECR type 14 GHz electron cyclotron resonance ion source.

2016

The efficiency of the microwave-plasma coupling plays a significant role in the production of highly charged ion beams with electron cyclotron resonance ion sources (ECRISs). The coupling properties are affected by the mechanical design of the ion source plasma chamber and microwave launching system, as well as damping of the microwave electric field by the plasma. Several experiments attempting to optimize the microwave-plasma coupling characteristics by fine-tuning the frequency of the injected microwaves have been conducted with varying degrees of success. The inherent difficulty in interpretation of the frequency tuning results is that the effects of microwave coupling system and the ca…

010302 applied physicsMaterials scienceta114Highly charged ionPlasma01 natural sciencesElectron cyclotron resonanceIon sourcemicrowaves010305 fluids & plasmasIonmikroaallotPhysics::Plasma Physics0103 physical scienceselectron cyclotron resonance ion sourcesplasma chamberAtomic physicsInstrumentationBeam (structure)MicrowaveMicrowave cavityThe Review of scientific instruments
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Kinetic instabilities in pulsed operation mode of a 14 GHz electron cyclotron resonance ion source

2016

The occurrence of kinetic plasma instabilities is studied in pulsed operation mode of a 14 GHz Aelectron cyclotron resonance type electron cyclotron resonance ion source. It is shown that the temporal delay between the plasma breakdown and the appearance of the instabilities is on the order of 10- 100 ms. The most important parameters affecting the delay are magnetic field strength and neutral gas pressure. It is demonstrated that kinetic instabilities limit the high charge state ion beam production in the unstable operating regime. peerReviewed

010302 applied physicsMaterials scienceta114Ion beamCyclotron resonancePlasma01 natural sciencesplasma electronsIon sourceElectron cyclotron resonanceFourier transform ion cyclotron resonance010305 fluids & plasmasMagnetic fieldpulsed operation modePhysics::Plasma Physics0103 physical scienceselectron cyclotron resonance ion sourceskinetic instabilitiesAtomic physicsInstrumentationIon cyclotron resonanceReview of Scientific Instruments
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Recent improvements of the LPSC charge breeder

2017

International audience; PSC has developed the PHOENIX electron cyclotron resonance Charge Breeder since 2000. The performances have been improved over time acting on the 1+ and N+ beam optics, the base vacuum and the 1+ beam injection. A new objective is to update the booster design to enhance high charge state production and 1+ N+ efficiencies, reduce the co-extracted background beam and improve the ion source tunability. The first step, consisting in increasing the peak magnetic field at injection from 1.2 T to 1.6 T was implemented and significant improvement in 1+N+ efficiencies are reported: 12.9% of 23Na8+, 24.2% of 40Ar8+, 13.3% of 132Xe26+ and 13% of 133Cs26+. The next steps of the …

010302 applied physicsMaterials scienceta114Nuclear engineering[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]syklotronitCharge (physics)plasmatekniikka01 natural sciences7. Clean energy010305 fluids & plasmaselectron cyclotron resonanceBreeder (animal)0103 physical sciencesplasma
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