Search results for "A2"
showing 10 items of 1101 documents
Tripled Fixed Point Results for T-Contractions on Abstract Metric Spaces
2014
In this paper we introduce the notion of T-contraction for tripled fi xed points in abstract metric spaces and obtain some tripled fi xed point theorems which extend and generalize well-known comparable results in the literature. To support our results, we present an example and an application to integral equations.
Admissibility versus Ap-Conditions on Regular Trees
2020
We show that the combination of doubling and (1, p)-Poincaré inequality is equivalent to a version of the Ap-condition on rooted K-ary trees. peerReviewed
Low-Noise Amplification and Frequency Conversion with a Multiport Microwave Optomechanical Device
2016
High-gain amplifiers of electromagnetic signals operating near the quantum limit are crucial for quantum information systems and ultrasensitive quantum measurements. However, the existing techniques have a limited gain-bandwidth product and only operate with weak input signals. Here we demonstrate a two-port optomechanical scheme for amplification and routing of microwave signals, a system that simultaneously performs high-gain amplification and frequency conversion in the quantum regime. Our amplifier, implemented in a two-cavity microwave optomechanical device, shows 41 dB of gain and has a high dynamic range, handling input signals up to $10^{13}$ photons per second, three orders of magn…
Recommendations for assessing patient-reported outcomes and health-related quality of life in patients with urticaria: a GA(2) LEN taskforce position…
2011
To cite this article: Baiardini I, Braido F, Bindslev-Jensen C, Bousquet PJ, Brzoza Z, Canonica GW, Compalati E, Fiocchi A, Fokkens W, Gerth van Wijk R, Giménez-Arnau A, Godse K, Grattan C, Grob JJ, La Grutta S, Kalogeromitros D, Kocatürk E, Lombardi C, Mota-Pinto A, Ridolo E, Saini SS, Sanchez-Borges M, Senna GE, Terreehorst I, Todo Bom A, Toubi E, Bousquet J, Zuberbier T, Maurer M. Recommendations for assessing patient-reported outcomes and health-related quality of life in patients with urticaria: a GA(2) LEN taskforce position paper. Allergy 2011; 66: 840-844. ABSTRACT: The aim of this Global Allergy and Asthma European Network (GA(2) LEN) consensus report is to provide recommendations …
Supramolecular hierarchy among halogen and hydrogen bond donors in light-induced surface patterning
2015
Halogen bonding, a noncovalent interaction possessing several unique features compared to the more familiar hydrogen bonding, is emerging as a powerful tool in functional materials design. Herein, we unambiguously show that one of these characteristic features, namely high directionality, renders halogen bonding the interaction of choice when developing azobenzene-containing supramolecular polymers for light-induced surface patterning. The study is conducted by using an extensive library of azobenzene molecules that differ only in terms of the bond-donor unit. We introduce a new tetrafluorophenol-containing azobenzene photoswitch capable of forming strong hydrogen bonds, and show that an io…
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
Optimizing charge breeding techniques for ISOL facilities in Europe: conclusions from the EMILIE project
2015
ThuM07; International audience; The present paper summarizes the results obtained from the past few years in the framework ofthe Enhanced Multi-Ionization of short-Lived Isotopes for Eurisol (EMILIE) project. The EMILIEproject aims at improving the charge breeding techniques with both Electron Cyclotron ResonanceIon Sources (ECRIS) and Electron Beam Ion Sources (EBISs) for European Radioactive Ion Beam(RIB) facilities. Within EMILIE, an original technique for debunching the beam from EBIS chargebreeders is being developed, for making an optimal use of the capabilities of CW post-acceleratorsof the future facilities. Such a debunching technique should eventually resolve duty cycle andtime st…
Some notes on a second-order random boundary value problem
2017
We consider a two-point boundary value problem of second-order random differential equation. Using a variant of the α-ψ-contractive type mapping theorem in metric spaces, we show the existence of at least one solution.
The Rank of Trifocal Grassmann Tensors
2019
Grassmann tensors arise from classical problems of scene reconstruction in computer vision. Trifocal Grassmann tensors, related to three projections from a projective space of dimension k onto view-spaces of varying dimensions are studied in this work. A canonical form for the combined projection matrices is obtained. When the centers of projections satisfy a natural generality assumption, such canonical form gives a closed formula for the rank of the trifocal Grassmann tensors. The same approach is also applied to the case of two projections, confirming a previous result obtained with different methods in [6]. The rank of sequences of tensors converging to tensors associated with degenerat…
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry
2019
In this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin st…