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RESEARCH PRODUCT
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
Michael L. AllesArto JavanainenRobert A. ReedRonald D. SchrimpfJean-marie LauensteinAndrew L. SternbergKenneth F. GallowayDennis R. BallRobert A. JohnsonBrian D. SierawskiA. F. Witulskisubject
Radiation transportSiCcross-sectionNuclear and High Energy PhysicsMaterials scienceMonte Carlo method01 natural sciencesIonpowerchemistry.chemical_compoundMOSFETneutronsilicon carbide0103 physical sciencesMOSFETSilicon carbideNeutronElectrical and Electronic EngineeringPower MOSFETMonte Carlosingle event burnoutta114ta213SEB010308 nuclear & particles physicsHigh voltageFITheavy ionComputational physicsNuclear Energy and Engineeringchemistrysäteilyfysiikkatransistoritfailure in timeMREDdescription
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-01-01 | IEEE Transactions on Nuclear Science |