0000000000826337

AUTHOR

Michael L. Alles

showing 2 related works from this author

Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

2019

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.

Radiation transportSiCcross-sectionNuclear and High Energy PhysicsMaterials scienceMonte Carlo method01 natural sciencesIonpowerchemistry.chemical_compoundMOSFETneutronsilicon carbide0103 physical sciencesMOSFETSilicon carbideNeutronElectrical and Electronic EngineeringPower MOSFETMonte Carlosingle event burnoutta114ta213SEB010308 nuclear & particles physicsHigh voltageFITheavy ionComputational physicsNuclear Energy and Engineeringchemistrysäteilyfysiikkatransistoritfailure in timeMREDIEEE Transactions on Nuclear Science
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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

2020

Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.

Nuclear and High Energy PhysicsMaterials science010308 nuclear & particles physicsbusiness.industrySchottky diodeHigh voltage01 natural sciencesIonchemistry.chemical_compoundNuclear Energy and EngineeringchemistryElectric field0103 physical sciencesMOSFETSilicon carbideOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessDiodeIEEE Transactions on Nuclear Science
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