6533b85bfe1ef96bd12ba965

RESEARCH PRODUCT

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Ronald D. SchrimpfJ. M. HutsonDennis R. BallRobert A. JohnsonAndrew L. SternbergKenneth F. GallowayBrian D. SierawskiRobert A. ReedJean-marie LauensteinA. F. WitulskiMichael L. AllesArto Javanainen

subject

Nuclear and High Energy PhysicsMaterials science010308 nuclear & particles physicsbusiness.industrySchottky diodeHigh voltage01 natural sciencesIonchemistry.chemical_compoundNuclear Energy and EngineeringchemistryElectric field0103 physical sciencesMOSFETSilicon carbideOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessDiode

description

Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.

yearjournalcountryeditionlanguage
2020-01-01IEEE Transactions on Nuclear Science
https://doi.org/10.1109/tns.2019.2955922