Search results for "AGN"

Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

Partial discharge detection and localization along medium voltage cables

2017

In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

Crystalline phase detection in glass ceramics by EPR spectroscopy

2018

The advances of EPR spectroscopy for the detection of activators as well as determining their local structure in the crystalline phase of glass ceramics is considered. The feasibility of d-element (Mn2+, Cu2+) and f-element (Gd3+, Eu2+) ion probes for the investigation of glass ceramics is discussed. In the case of Mn2+, the information is obtained from the EPR spectrum superhyperfine structure, for Gd3+ and Eu2+ probes – from the EPR spectrum fine structure, whereas for Cu2+ ions the changes in the EPR spectrum shape could be useful. The examples of EPR spectra of the above-mentioned probes in oxyfluoride glass ceramics are illustrated. ----/ / /---- This is the preprint version of the fol…

Kinetic instabilities in pulsed operation mode of a 14 GHz electron cyclotron resonance ion source

2016

The occurrence of kinetic plasma instabilities is studied in pulsed operation mode of a 14 GHz Aelectron cyclotron resonance type electron cyclotron resonance ion source. It is shown that the temporal delay between the plasma breakdown and the appearance of the instabilities is on the order of 10- 100 ms. The most important parameters affecting the delay are magnetic field strength and neutral gas pressure. It is demonstrated that kinetic instabilities limit the high charge state ion beam production in the unstable operating regime. peerReviewed

Photoelectron Emission from Metal Surfaces Induced by Radiation Emitted by a 14 GHz Electron Cyclotron Resonance Ion Source

2015

Photoelectron emission measurements have been performed using a room-temperature 14 GHz ECR ion source. It is shown that the photoelectron emission from Al, Cu, and stainless steel (SAE 304) surfaces, which are common plasma chamber materials, is predominantly caused by radiation emitted from plasma with energies between 8 eV and 1 keV. Characteristic X-ray emission and bremsstrahlung from plasma have a negligible contribution to the photoelectron emission. It is estimated from the measured data that the maximum conceivable photoelectron flux from plasma chamber walls is on the order of 10% of the estimated total electron losses from the plasma. peerReviewed

Power efficiency improvements with the radio frequency H− ion source

2016

CW 13.56 MHz radio frequency-driven H(-) ion source is under development at the University of Jyväskylä for replacing an existing filament-driven ion source at the MCC30/15 cyclotron. Previously, production of 1 mA H(-) beam, which is the target intensity of the ion source, has been reported at 3 kW of RF power. The original ion source front plate with an adjustable electromagnet based filter field has been replaced with a new front plate with permanent magnet filter field. The new structure is more open and enables a higher flux of ro-vibrationally excited molecules towards the plasma electrode and provides a better control of the potential near the extraction due to a stronger separation …