Search results for "Absorption edge"
showing 10 items of 95 documents
Resonant X-Ray Scattering of Biological Systems
1987
Nearly all synchrotron radiation laboratories at high energy electron storage rings put enormous effort into the developement of resonant (anomalous) X-ray scattering techniques. So does the Hamburger Synchrotronstrahlungslabor (HASYLAB) at Hamburg. One of these intruments which is built in cooperation with the university of Mainz at the beam line A1 of the storage ring DORIS. How does the physics of resonant scattering enter into the design of the X-ray instrument.
Vacuum-ultraviolet absorption of amorphous SiO2: intrinsic disorder and role of silanol groups
2008
We present a study on the vacuum-ultraviolet VUV absorption properties of amorphous SiO2 a-SiO2 with high concentrations of silanol groups Si-OH . We found that the absorption spectra are made up of a couple of exponential profiles. The first, in the range from 7.5 to 8.1 eV, was attributed to Si-OH group absorption, while the second, in the range from 8.1 to 8.25 eV, was ascribed to the intrinsic absorption. The VUV absorption cross section of Si-OH groups in a-SiO2 was determined as well. The intrinsic absorption was found to be affected by the Si-OH concentration: high silanol group contents allow lower values of the Urbach energy. This result is interpreted in terms of a reduction in th…
Sturctural disorder and silanol groups content in amorphous SiO2
2009
We present a study on the features of the Urbach edge in amorphous silicon dioxide a-SiO2 . The effects of temperature on the absorption edge in the range from 4 to 300 K were studied in both materials having negligible dry, 1017 cm−3 and significant wet, 1019 cm−3 silanol groups contents. Remarkable differences in the values and in the temperature dependence of the Urbach energy in the dry and wet samples were observed. These differences are interpreted as a consequence of a drastic reduction in the degree of disorder in wet materials, which turn out to be characterized by an electronic structure more similar to that of crystalline quartz. Furthermore, our results indicate that silanol gro…
Synthetic and natural chromium bearing spinels: an optical spectroscopy study
2014
Four samples of synthetic chromium-bearing spinels of (Mg, Fe2+)(Cr, Fe3+)2O4 composition and four samples of natural spinels of predominantly (Mg, Fe2+)(Al, Cr)2O4 composition were studied at ambient conditions by means of optical absorption spectroscopy. Synthetic end-member MgCr2O4 spinel was also studied at pressures up to ca. 10 GPa. In both synthetic and natural samples, chromium is present predominantly as octahedral Cr3+ seen in the spectra as two broad intense absorption bands in the visible range caused by the electronic spin-allowed 4A2g → 4T2g and 4A2g → 4T1g transitions (U- and Y-band, respectively). A distinct doublet structure of the Y-band in both synthetic and natural spine…
Fluorine laser-induced silicon hydride SiH groups in silica
2007
Abstract Formation and destruction of silicon hydride (Si–H) groups in silica by F 2 laser irradiation and their vacuum ultraviolet (VUV) optical absorption was examined by infrared (IR) and VUV spectroscopy. Photoinduced creation of Si–H groups in H 2 -impregnated oxygen deficient silica is accompanied by a growth of infrared absorption band at 2250 cm −1 and by a strong increase of VUV transmission at 7.9 eV. Photolysis of Si–H groups by 7.9 eV photons in this glass was not detected when the irradiation was performed at temperature 80 K. However, a slight destruction of Si–H groups under 7.9 eV irradiation was observed at the room temperature. This finding gives a tentative estimate of VU…
X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors
2006
We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga 1-x Mn x N (0.06 <x<0.14) thin epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The measurements were performed in fluorescence mode around the Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after …
Structural-relaxation phenomena in As–S glasses as probed by combined PAL/DBAR technique
2015
Abstract Experimental techniques exploring phenomena of positron–electron interaction, namely the positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation, are shown to be very informative tools to study radiation- and thermally-induced phenomena in chalcogenide glasses of binary As–S system. Time-dependent processes of free-volume voids agglomeration (expansion), fragmentation (refining) and disappearing (contraction) are identified as main stages of physical aging in S-rich glasses, while a competitive channel of coordination topological defects formation associated with void charging becomes significant in a vicinity of near-stoichiometric glass compos…
Transient attosecond soft-X-ray spectroscopy in layered semi-metals (Conference Presentation)
2020
X-ray absorption fine-structure (XAFS) spectroscopy is a well-established technique capable of extracting information about a material’s electronic and lattice structure with atomic resolution. While the near-edge region (XANES) of a XAFS spectrum provides information about the electronic configuration, structural information is extracted from the extended XAFS (EXAFS) spectrum, consisting of several hundreds of eV above the absorption edge. With the advent of high harmonic sources, reaching photon energies in soft x-ray (SXR) region, it now becomes possible to connect the spectroscopic capabilities of XAFS to the unprecedented attosecond temporal resolution of a high harmonic source allowi…
Study of Photo-Induced Thin Film Growth on Cds Substrates.*
1983
ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.
X-ray absorption study of the electronic structure of tungsten and molybdenum oxides on the O K-edge
2001
Magnetron sputtered amorphous thin films a-WO3, a-MoO3 and doped a-WO3:Ir have been studied by X-ray absorption spectroscopy on the oxygen K-edge in comparison with crystalline oxides as monoclinic m-WO3, orthorhombic α-MoO3, cubic Na0.6WO3, layered-type hexagonal h-WO3 and WO3·H2O, having variable electronic and atomic structure. The changes in the XANES ranging 10–15 eV above the absorption edge are interpreted based on the known band-structure calculations. The high-energy features are related to the multiple-scattering processes (EXAFS) at the nearest atoms.