Search results for "Absorption"
showing 10 items of 2701 documents
The origin of the intrinsic 1.9 eV luminescence band in glassy SiO2
1994
Abstract The current controversy over the nature of the centers giving rise to the 1.9 eV photoluminescence (PL) band (the R-band), the suggested defect models and the relevant experimental data are briefly reviewed. The luminescence emission, excitation and polarization spectra of neutron-irradiated synthetic silica were studied between 6 and 300 K using site-selective dye-laser and Ar ion laser excitation. Resonant zero-phonon lines (ZPL) were observed below 80 K both in luminescence emission and excitation spectra in the 1.9–2.1 eV region. A vibration line in emission spectra 890 cm−1 below the ZPL energy is attributed to the symmetric stretching vibration of the silicon-non-bridging oxy…
Luminescence of fluorine-doped and non-doped silica glass excited with an ArF laser
2004
Abstract The role of fluorine doping on silica has been studied through comparison of the luminescence of fluorine doped and fluorine-free samples made by melting in on SiF4 atmosphere and excited by an ArF laser (6.4 eV) in the temperature range 10–290 K. The fluorine doped sample possesses a very weak absorption band at 7.6 eV on the level of 0.1 cm−1 and there the photoluminescence of so-called oxygen-deficient centers in the blue (2.7 eV) and UV bands (4.4 eV) could be excited. The same luminescence bands are observable in the fluorine-free sample, which contains an absorption band at 7.6 eV on the level of 20 cm−1. In the fluorine-doped sample the UV band prevails over the blue band. T…
Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation.
2007
We report a study of the photoluminescence (PL) time decay of the B-type center, characterized by an optical absorption band peaked at similar to 5.2 eV and two related PL bands peaked at similar to 3.2 eV and similar to 4.3 eV, in sol-gel Ge-doped a- SiO2 under excitation by synchrotron radiation. Measurements were carried out by excitation in UV and in vacuum-UV (VUV), and were performed in the temperature range from 8 K up to 300 K in order to isolate the effects of the intersystem-crossing process, proposed to link the two emission bands of the center. Repeating the time decay measurement at several emission energies falling inside the 4.3 eV band, we have observed a variation of the PL…
Single-molecule spectroscopy of molecular aggregates at low temperature
2004
We have conducted single-molecule spectroscopy of a fluorescent polyphenylene dendrimer consisting of four peripheral perylenemonoimides which serve as energy donors and a central terrylenediimide which is the energy acceptor. After selective excitation of the donors the low-temperature emission spectra of single dendrimers show the purely electronic zero-phonon line as the most prominent feature of the acceptor. These sharp emission lines are subjected to appreciable spectral shifts. Fluorescence excitation spectroscopy of individual dendrimers in the spectral region of the donor absorption allows to extract energy transfer rates for single donors within the dendrimer. Although the energy …
Luminescence and Raman Detection of Molecular Cl2 and ClClO Molecules in Amorphous SiO2 Matrix
2017
The support from the Latvian Research Program project IMIS 2 (L.S., K.S.) and Latvian Science Council Grant 302/2012 (A.S.) is acknowledged. K.K. was partially supported by the Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology. H.H. was supported by the MEXT Element Strategy Initiative to form research cores.
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
Conformational disorder and optical properties of point defects in vitreous silica
2004
Abstract Disordered systems are characterized by the presence of local conformational heterogeneity, which reflects the complex landscape of the potential energy of the vitreous state. Optical properties of defects embedded in a vitreous matrix are also determined by the interaction with the surrounding environment; so the conformational disorder of the system induces spectral inhomogeneity. As a consequence, detailed experimental investigation of absorption and photoluminescence bands can give information on configurational substates around the chromophore. We focused our attention on B-type optical activity in silica glasses, characterized by a singlet emission and a triplet emission, conne…
Luminescence Efficiency of Si/SiO 2 Nanoparticles Produced by Laser Ablation
2019
Photoluminescence properties of Si(core)/SiO 2 (shell) nanoparticles produced by pulsed laser ablation in aqueous solution are investigated with the purpose to highlight the microscopic processes that govern the emission brightness and stability. Time resolved spectra evidence that these systems emit a µs decaying band centered around 1.95 eV, that is associated with the radiative recombination of quantum-confined excitons generated in the Si nanocrystalline core. Both the quantum efficiency and the stability of this emission are strongly dependent on the pH level of the solution, that is changed after the laser ablation is performed. They enhance in acid environment because of the H + pass…
Conformational heterogeneity of the point defects in silica: The lifetime of the phosphorescence band at 2.7 eV
2008
We have measured the excitation and emission energy dependence of the lifetimes of the 2.7 eV photoluminescence band associated to oxygen deficient centers in silica glasses. The non-exponential behavior of this time decay is consistent with intrinsic conformational heterogeneity of these point defects in the amorphous matrix. Accordingly, we have analyzed the data in terms of a radiative rates distribution. Moreover, both surface and bulk typologies of these point defects have been studied. The mean value of the lifetime distribution of the surface defects increases from 12 to 15 ms varying the excitation energy from 4.6 to 5.2 eV, and it increases from 14 to 15 ms in the emission energy i…