Search results for "Allium"
showing 10 items of 385 documents
Hot electron noise in n-type GaAs in crossed electric and magnetic fields
2006
A Monte Carlo analysis of hot electron transport properties of bulk \textit{n}-type GaAs in crossed electric and magnetic fields is presented. %Magnetic field strengths allowing negligible quantum effects in the electron dynamics during free flights are considered. Effects due to the nonparabolicity of bands are properly taken into account by means of a local parabolic approximation. Stochastic properties of electron transport are analyzed by computing the velocity auto-correlation function and the spectral density of fluctuations. It is shown how the presence of the magnetic field is able to deeply modify electron noise up to high electric field strengths. The resulting features of the vel…
Charge Distribution ofPb208and the Difference inρ(r)for Pb and Tl Investigated by by Elastic Electron Scattering
1976
Elastic electron-scattering cross sections from $^{208}\mathrm{Pb}$ have been measured for $0.5 {\mathrm{fm}}^{\ensuremath{-}1}lql2.24 {\mathrm{fm}}^{\ensuremath{-}1}$. The charge distribution for this nucleus is determined by a "model-independent" method; it exhibits a bump in the center of the nucleus which is also a characteristic feature of Hartree-Fock calculations. The influence of the $3s$ protons on $\ensuremath{\rho}(r)$ has been investigated by a difference measurement between lead and thallium isotones.
Monte Carlo Analysis of Voltage-Current Characteristic Nonlinearity and Harmonic Generation in Submicron Semiconductor Structures
2006
Using a multiparticles Monte Carlo technique, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ structures operating under very intense sub-terahertz signals from some process parameters as: i) the frequency and the intensity of the excitation signal and ii) the length of the n region
Realization of a robust single-parameter quantized charge pump
2008
This paper describes a novel scheme for quantized charge pumping based on single-parameter modulation. The device is realized in an AlGaAs-GaAs gated nanowire. A particular advantage of this realization is that operation in the quantized regime can be achieved in a potentially large range of amplitude and dc off-set of the driving signal. This feature together with the simple configuration might enable large scale parallel operation of many such devices.
Dynamic $\mathrm{R}_{\mathrm{ON}}$ evaluation of commercial GaN HEMT under different switching and radiation conditions
2019
This paper focus on the study of dynamic resistance $(\mathrm{R}_{\mathrm{dyn}})$ over commercial Gallium Nitride High Electromobility Transistors (GaN HEMTs) devices. The first part shows a study of the main mechanism causing $\mathrm{R}_{\mathrm{dyn}}$ , showing that depending on the structure, stress time, voltage applied and switching conditions, the $\mathrm{R}_{\mathrm{dyn}}$ can suffer a relevant increase. Also, it is demonstrated how the use of soft-switching conditions can alleviate trapping effects. Finally, due to the interest over these devices for future space applications, the effects of gamma radiation over the $\mathrm{R}_{\mathrm{dyn}}$ has been studied.
Sedimentological implications of an unusual form of the trace fossil Rhizocorallium from the Lower Muschelkalk (Middle Triassic), S. Poland
2011
Specimens of the trace fossil Rhizocorallium isp. with retrusive limbs occur in 10–20-cm-thick composite beds: the bottom layers contain abundant Planolites and Thalassinoides trace fossils, and the top layers are built of horizontally bedded pelitic limestone and contain less bioturbational structures. The first specimens of Rhizocorallium isp. occur just 2–3 cm above the lower surfaces of the top layers. The horizontal protrusive sections are 1 cm high and 1 cm wide. At some sites, the horizontal tunnels end, and the limbs become first obliquely retrusive (45°) at a distance of 1.5–2.5 cm, and then vertically retrusive at a distance of 4–6 cm, or at once vertically retrusive at a similar …
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Dependence of the lattice parameters and the energy gap of zinc-blende-type semiconductors on isotopic masses.
1996
The dependence of the ${\mathit{E}}_{0}$ direct gap of Ge, GaAs, and ZnSe on isotopic masses at low temperatures has been investigated. Contributions of the variation of the lattice parameter to the gap shift of the binary compounds have been evaluated by using a volume-dependent lattice dynamics, while local empirical pseudopotential techniques have been employed to calculate gap shifts due to electron-phonon interaction. The dependence of these terms on the lattice-dynamical model and on the q\ensuremath{\rightarrow}0 extrapolation of the pseudopotential form factors has been investigated. The contributions of the optical and acoustical modes to the isotopic shift are analyzed. The result…
Particle size-related limitations of persistent phosphors based on the doped Y3Al2Ga3O12 system
2021
AbstractCo-doped Ce3+, Cr3+ and Pr3+ yttrium–aluminium–gallium garnet powders of various sizes were obtained by co-precipitation method. The microstructure and morphology were investigated by XRPD, TEM and gas porosimetry. The luminescence properties were studied by excitation and emission spectra, quantum yield and decay times. Thermoluminescence measurements were performed to evaluate the activation energy, traps redistribution and frequency factor. Limitation in the energy transfer between dopant ions in the small particles, traps depth and surface defects were considered and investigated as responsible for the quenching of persistent luminescence. The phosphors annealed at 1100 °C show …
Spectroscopy of an optical excited Ga doped SiO2 surface
2007
Abstract We present the first spectroscopical analysis of the Ga/SiO2 surface interaction in hot environment. This interaction gives rise to inclusions of Ga atoms inside the silica matrix that produce structural changes and modify the SiO2 optical characteristics. This paper discusses both the time- and the frequency-resolved spectra of the fluorescence emission following UV pulsed laser excitation of the so “doped” silica in the range 15,000–28,000 cm−1. The investigation is completed by the electron paramagnetic resonance (EPR) spectra of two high-purity synthetic silica samples of commercial origin after thermal treatment in presence and in absence of a Ga atmosphere.