Search results for "Amplifier"

showing 10 items of 239 documents

Nanopatterned ferroelectric crystals for parametric generation

2006

We report on recent results by surface periodic poling on lithium niobate and lithium tantalate. Such approach allows periodic inversion of the second order susceptibility with nanoscale features using insulating masks. We achieved a world-best 200 nm feature size, as well as good compatibility with alpha-phase proton exchanged channel waveguides in lithium niobate. Preliminary results of surface periodic poling in lithium tantalate also show similar characteristics. Surface poling is best suited for integrated optics devices in technologically-demanding configurations such as backward second harmonic generation and counter propagating optical parametric amplification

Nonlinear integrated opticsOptical frequency multiplierMaterials sciencebusiness.industryParametric generationPolingLithium niobateSecond-harmonic generationPhysics::OpticsLithium tantalateSurface periodic polingLithium niobateFerroelectricityOptical parametric amplifierchemistry.chemical_compoundOpticschemistryPeriodic polingLithium tantalatebusiness
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A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)

2009

A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part a…

Nuclear and High Energy PhysicsEngineeringanalog processing circuitsMotherboardPhysics::Instrumentation and DetectorsInterface (computing)Analog-digital conversionFPGAshigh energy physics instrumentationUSBMicrostripChargelaw.inventionCharge sensitive amplifiersData acquisitionmicroprocessorslawlogic designElectrical and Electronic Engineeringdetector instrumentationtime to digitalbusiness.industryReading (computer)electronicsDetectorElectrical engineeringConvertersCollectionsfront-end electronicssemiconductor detectorsNuclear Energy and Engineeringdata acquisition systemsdigital integrated circuitsbusinessDaughterboard
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Design of a High-Efficiency Ka-Band TWT Power Amplifier for Radar Applications

2022

The design of a high-efficiency Traveling Wave Tube (TWT) based on a non-conventional folded waveguide slow-wave structure (FW-SWS) operating over 34-36 GHz for naval and ground Ka-band radars is presented. The ridge vane-loaded FW structure allows a good compromise between high interaction impedance and wide bandwidth along with a low weight required for aircraft radar applications and a simple planar manufacturing process structure. Small signal simulations are performed with a custom interaction impedance evaluation program. The CST suite 2021 3D electromagnetic simulation code is used for the prediction of the dispersion diagram. Starting from a sensitivity analysis of the folded wavegu…

Nuclear and High Energy PhysicsFolded Waveguide Microwave Power AmplifierSettore ING-INF/02 - Campi ElettromagneticiCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaIEEE Transactions on Plasma Science
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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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Development of new CdZnTe detectors for room-temperature high-flux radiation measurements

2017

Recently, CdZnTe (CZT) detectors have been widely proposed and developed for room-temperature X-ray spectroscopy even at high fluxes, and great efforts have been made on both the device and the crystal growth technologies. In this work, the performance of new travelling-heater-method (THM)-grown CZT detectors, recently developed at IMEM-CNR Parma, Italy, is presented. Thick planar detectors (3 mm thick) with gold electroless contacts were realised, with a planar cathode covering the detector surface (4.1 mm × 4.1 mm) and a central anode (2 mm × 2 mm) surrounded by a guard-ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA cm−2 at 1000 V cm−1), a…

Nuclear and High Energy PhysicsPreamplifier02 engineering and technologydigital pulse shape analysiRadiation01 natural scienceslaw.inventionPlanarOpticstravelling heater methodlaw0103 physical scienceshigh fluxInstrumentationenergy-resolved photon-counting detectorsNuclear and High Energy PhysicPhysicsRadiationdigital pulse shape analysis010308 nuclear & particles physicsbusiness.industryCdZnTe detectorsCdZnTe detectorDetectorSettore FIS/01 - Fisica SperimentaleX-ray and γ-ray detectorenergy-resolved photon-counting detector021001 nanoscience & nanotechnologyCathodeSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Anodegold electroless contactFull width at half maximumX-ray and -ray detectors0210 nano-technologybusinessVoltage
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Operational experience with a large detector system using silicon strip detectors with double sided readout

1992

Abstract A large system of silicon strip detectors with double sided readout has been successfully commissioned over the course of the last year at the e + e − collider LEP. The readout of this 73 728 channel system is performed with custom designed VLSI charge sensitive amplifier chips (CAMEX64A). An overall point resolution of 12 μm on both sides has been acheived for the complete system. The most important difficulties during the run were beam losses into the detector, and a chemical agent deposited onto the electronics; however, the damage from these sources was understood and brought under control. This and other results of the 1991 data-taking run are described with special emphasis o…

Nuclear and High Energy PhysicsSiliconPhysics::Instrumentation and Detectorschemistry.chemical_element01 natural scienceslaw.inventionlaw0103 physical sciencesVLSI circuit[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]ElectronicsDetectors and Experimental Techniques010306 general physicsColliderInstrumentationPhysicsVery-large-scale integration010308 nuclear & particles physicsbusiness.industryDetectorEmphasis (telecommunications)Colliding beam acceleratorMicrostrip deviceAmplifiers (electronic)Semiconducting siliconchemistryOptoelectronicsLEP storage ringbusinessBeam (structure)Radiation detectorCommunication channelNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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Collection, cooling and delivery of ISOL beams

1992

Abstract The collection of an ISOL beam in a Penning trap using implantation on a surface that is subsequently manipulated so as to become part of an end electrode of a Penning trap and reionization of the implanted material by heat has already been very productive for high-precision nuclear-mass measurements, even though it is limited to elements that are surface ionizable and the collection efficiencies are never better than about 0.1%. More recently, in 1990 a Paul trap system for electric collection of ions was installed at the ISOLDE-3 facility and collection was demonstrated for a 60 kV beam of 132 Xe ions. The purpose of this test setup was to determine the relationship between phase…

Nuclear and High Energy Physicsbusiness.industryChemistryRF power amplifierPenning trapIonTrap (computing)OpticsBooster (electric power)Ion trapAtomic physicsbusinessInstrumentationBeam (structure)VoltageNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Self-phase modulation-based 2R regenerator including pulse compression and offset filtering for 42.6 Gbit/s RZ-33% transmission systems

2009

International audience; We report on the experimental and theoretical study of a self-phase-modulation-based regenerator at 42.6 Gbit/s with a return-to-zero 33% format. We point out some detrimental effects such as intrachannel interactions and Brillouin scattering. An efficient solution, relying on a self-phase-modulation-based pulse compressor in combination with the regenerator, is proposed to overcome these detrimental phenomena. The experimental demonstration shows the effectiveness of a wavelength-transparent regenerator at 42.6 Gbit/s with a sensitivity-improvement of more than 5 dB and an eye-opening improvement of 2.3 dB in a back-to-back configuration, as well as a 10 times maxim…

Offset (computer science)Materials science060.2330 ; 070.4340 ; 190.3270 ; 190.438002 engineering and technologyMamyshev 2R regeneratorSensitivity and Specificity01 natural sciences010309 optics020210 optoelectronics & photonicsOpticsBrillouin scattering0103 physical sciences0202 electrical engineering electronic engineering information engineeringComputer SimulationMicrowavesSelf-phase modulationOptical amplifierbusiness.industryCross-phase modulationOptical DevicesReproducibility of ResultsEquipment DesignModels TheoreticalAtomic and Molecular Physics and OpticsEquipment Failure AnalysisRefractometryPulse compressionRegenerative heat exchangerTelecommunicationsComputer-Aided DesignbusinessFiltration
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Radiation hardening of Rare-Earth doped fiber amplifiers

2012

We investigated the radiation hardening of optical fiber amplifiers operating in space environments. Through a real-time analysis in active configuration, we evaluated the role of Ce in the improvement of the amplifier performance against ionizing radiations. Ce-codoping is an efficient hardening solution, acting both in the limitation of defects in the host glass matrix of RE-doped optical fibers and in the stabilization of lasing properties of the Er3+-ions. On the one hand, in the nearinfrared region, radiation induced attenuation measurements show the absence of radiation induced P-related defect species in host glass matrix of the Ce-codoped active fibers; on the other hand, in the Ce-…

Optical amplifier optical spectroscopy Infrared Spectra Laser Excitation Rare-Earth Elements
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Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

2004

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented a…

Optical amplifier:Science::Physics::Optics and light [DRNTU]Materials scienceExtinction ratiobusiness.industryLaser pumpingCondensed Matter PhysicsLaserOptical switchAtomic and Molecular Physics and Opticslaw.inventionVertical-cavity surface-emitting laserSemiconductor laser theoryOptical pumpingOpticslawOptoelectronicsElectrical and Electronic Engineeringbusiness
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