Search results for "Annealing"
showing 10 items of 434 documents
Theoretical study of Fe doping and oxidation–reduction influence on the photorefractive effect in BaTiO_3
1993
We numerically solve charge-transport and Poisson equations for photorefractive BaTiO3 single crystals with a band model, using four impurity levels, Fe2+–Fe3+, Fe3+–Fe4+, VO••–VO•, and VO•-VOx. Densities and photoinduced spatial distributions of each population are computed as a function of annealing O partial pressure. Space-charge field and beam-coupling gain are also computed as a function of annealing O partial pressure, temperature, Fe concentration, grating wave vector, and light intensity. We discuss the intervening mechanism of impurity centers and the correlations between experimental conditions of crystal growth, oxidation–reduction treatments, and measurement parameters.
The effect of heat treatment on the morphology and mobility of Au nanoparticles
2020
This work was supported by The Centre National de la Recherche Scientifique (CNRS) of France and the French Embassy Program. The authors are also grateful for partial support by COST Action CA15216, the Estonian Science Foundation (grants PUT1689 and PUT1372), the Estonian Centre of Excellence in Zero Energy and Resource Efficient Smart Buildings and Districts, ZEBE, grant 2014-2020.4.01.15.0016 and Latvian Science Council grant lzp-2018/2-0083.
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
2010
The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
2003
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
Fabrication, Electrical Characterization and 1/f Noise Study of Submicron-sized Superconducting Tunnel Junctions
2016
Flash infrared annealing as a cost-effective and low environmental impact processing method for planar perovskite solar cells
2019
Abstract For successful commercialization of perovskite solar cells, straightforward solutions in terms of environmental impact and economic feasibility are still required. Flash Infrared Annealing (FIRA) is a rapid method to fabricate perovskite solar cells with efficiencies >18% on simple, planar architecture, which allows a film synthesis in only 1.2 s, faster than the previous report based in a meso architecture and all of them without the usage of antisolvent. In this work, through a comparative study with the common lab-scale method, the so-called antisolvent (AS), the main photovoltaic parameters and working mechanisms obtained from impedance spectroscopy (IS) measurements show simil…
Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …
2019
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge
Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition
2021
Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
2016
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…