Search results for "Anodizing"
showing 10 items of 116 documents
Electrochemical Tantalum Oxide for Resistive Switching Memories
2017
Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5-based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metal…
Electronic Properties of Thermal Oxides on Ti and Their Influence on Impedance and Photoelectrochemical Behavior of TiO2 Nanotubes
2017
Thermal oxidation of titaniumwas carried out at 350◦C, 450◦C, and 550◦C for 2 h or 12 h.X-rayDiffraction and Raman Spectroscopy suggest that the thermal oxides are scarcely crystallinewhen the annealing temperature is low, while both anatase and rutile are present for high annealing temperature and time. Photoelectrochemical measurements allowed estimation of a bandgap decreasing from 3.35 eV to 3.15 eV with increasing annealing temperature. The impedance spectra confirmed the formation of n-type semiconductors, with an impedance strongly decreasing on going from a reverse bias toward a forward bias regime. TiO2 nanotubes grown by anodizing Ti in NH4F and water containing ethylene glycol so…
Double Step Electrochemical Process for the Deposition of Superhydrophobic Coatings for Enhanced Corrosion Resistance
2021
Superhydrophobic surface on anodized AA5083 sample was obtained by an electrochemical process. Scanning Electron Microscopy and Fourier Transform Infrared Spectroscopy analyses revealed the hierarchical structure of the coating and the presence of manganese stearate. These features were crucial for the coating superhydrophobicity, demonstrated by a measured contact angle of ~ 163° and its self-cleaning ability. Electrochemical characterization in an aqueous solution mimicking seawater proved an enhanced corrosion resistance due to the superhydrophobic coating with respect to anodized AA5083 sample that also lasted after 20 immersion days in Cl- containing electrolyte.
Power ultrasound irradiation during the alkaline etching process of the 2024 aluminium alloy
2015
Abstract Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).
Characterization of the Solid State Properties of Anodic Oxides on Ta-Nb Alloys as a Function of the Anodizing Conditions
2011
Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited TaxNb(1-x) alloys with 0 ≤ x ≤ 1. A photoelectrochemical investigation was performed in order to estimate the band gap values of the oxides as a function of their composition as well as to estimate their flat band potential. Differential capacitance curves were recorded for all the investigated oxides in a wide range of electrode potential and for several frequencies of the alternative signal. The dependence of C on the applied potential and a.c. frequency was interpreted on the basis of amorphous semiconductor Schottky barrier, and allowed to estimate the dielectric constant of the inv…
Observation of New Oscillatory Phenomena during the Electrochemical Anodization of Silicon
1999
This paper reports the observation of large undamped voltage oscillations during the anodic polarization of silicon in electrol yte containing a combination of acids. One of them stimulates oxide growth and the other its chemical dissolution (in the present c ase, (0.01-0.1 M H3PO4) + (0.001- 0.01 M HF). This temporal patterning of the anodization process is shown to be due to the formation of a thin (50-90 nm) oxide layer at the sample surface and its subsequent lifting-off. The mechanism of oxide detachment i s thought to be an isotropic growth of micropores at the oxide/silicon interface triggered on by changes of electrochemical condi tions there.
Mechanism of large oscillations of anodic potential during anodization of silicon in H3PO4/HF solutions
2000
Abstract Effect of large oscillations of electrical potential during anodic polarization of silicon in electrolytes composed of phosphoric and hydrofluoric acids has been reported. The oscillations last hours without damping if experimental conditions are optimal. Changes of temperature, anodic current density, intensity of stirring, etc. quench them or convert into less periodic ones. The oscillations are of very high amplitude (typically 15 V) with a period ranging from 18 to 30 s. Scanning electron microscopy (SEM)-imaging of the samples experiencing the oscillatory kinetic behaviour shows unambiguously that the stage of the anodic voltage growth is assisted by the formation of a thin (5…
Optical properties of thin metal films with nanohole arrays on porous alumina–aluminum structures
2015
A multilayer system is formed by the deposition of a 10–35 nm thin Au or Ag film with 18–25 nm diameter holes on 75–280 nm thick layers of porous anodized aluminum oxide (AAO) supported by a bulk sheet of aluminum. We present a detailed study of system parameters, which influence the optical response, including the porosity, metal layer thickness and crystallographic orientation of the Al substrate. The spectral properties are mainly governed by the interference of the reflections from the Al substrate and the thin metal film separated by the AAO layer. An enhanced plasmonic attenuation component near 650 nm for the Au films with holes can be observed when the interferometric anti-reflectio…
Electrochemically prepared oxides for resistive switching memories
2018
Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state prop…
Photo-electrochemical investigation of anodic oxide films on cast Ti–Mo alloys. I. Anodic behaviour and effect of alloy composition
2009
Abstract The anodic behaviour of cast Ti–Mo alloys, having different Mo contents (6–20 wt.%), was investigated in acidic and neutral aerated aqueous solutions. All sample showed a valve-metal behaviour, owing to formation and thickening of barrier-type anodic oxides displaying interference colours. Growth kinetics of passive films is influenced by both anodizing electrolyte and composition of the starting alloy. This last parameter was found to change also the solid-state properties of the films, explored by photoelectrochemical and impedance spectroscopy experiments. Thicker films ( U f = 8 V/MSE) grown on alloys richer in Mo showed more resistive character and a photocurrent sign inversi…