Search results for "Applied Physic"
showing 10 items of 1228 documents
Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
2018
A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum–ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N2/H2), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm. Time-of-flight elastic recoil detection analysis showed the sputtered films t…
Measurement of the energy distribution of electrons escaping minimum-B ECR plasmas
2017
The measurement of the electron energy distribution (EED) of electrons escaping axially from a minimum-B electron cyclotron resonance ion source (ECRIS) is reported. The experimental data were recorded with a room-temperature 14 GHz ECRIS at the JYFL accelerator laboratory. The electrons escaping through the extraction mirror of the ion source were detected with a secondary electron amplifier placed downstream from a dipole magnet serving as an electron spectrometer with 500 eV resolution. It was discovered that the EED in the range of 5–250 keV is strongly non-Maxwellian and exhibits several local maxima below 20 keV energy. It was observed that the most influential ion source operating pa…
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
2019
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously shown to dramatically improve internal quantum efficiency of near-UV LEDs, via a decrease in the density of deep traps responsible for nonradiative recombination in the QW region. The main differences between samples with and without UL were (a) a higher compensation of Mg acceptors in the p-GaN:Mg contact layer of the sample without UL, which correlates with the presence of traps with an activation energy of 0.06 eV in the QW region, (b) the…
A magnetostrictive generator for sensors network
2017
In this paper we present a vibration harvesting electric power generator based on magnetostrictive effect for sensors network in hazardous area and we validate it experimentally. The generator has been designed by using Dynamic Preisach hysteresis Model (DPM). DPM is a development of classical Preisach Model which is able to include dynamical features in the mathematical model of hysteresis. We measure the output power capability of the generator and we estimate its power density generation capability.
Influence of organic material and sample parameters on the surface potential in Kelvin probe measurements
2019
Financial support provided by ERDF 1.1.1.1 activity project Nr. 1.1.1.1/16/A/046 “Application assessment of novel organic materials by prototyping of photonic devices” as well as Scientific Research Project for Students and Young Researchers Nr. SJZ2016/20 realized at the Institute of Solid State Physics, University of Latvia is greatly acknowledged.
Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions
2019
This article belongs to the Special Issue Multi-Dimensional Direct-Write Nanofabrication.
Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing
2018
InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…
Heat capacity and thermal conductivity of multiferroics Bi1-xPrxFeO3
2019
The heat capacity and thermal conductivity of multiferroics Bi1–xPrxFeO3 (0 ≤ x ≤ 0.50) has been studied in the temperature range of 130–800 K. A slight substitution of praseodymium for bismuth is found to lead to a noticeable shift of the antiferromagnetic phase transition temperature whilst the heat capacity increases. The temperature dependences of the heat capacity and thermal conductivity exhibit additional anomalies during phase transitions. The experimental results suggest that the excess heat capacity can be attributed to the Schottky effect for three-level states. The basic mechanisms of the heat transfer of phonons are highlighted and the dependence of the mean free path on temper…
Surface and interface effects on the current-voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed throug…
2021
The possibility to increase the efficiency of photovoltaic (PV) cells based on hybrid carbon nanotube (CNT)–Si heterojunctions is related to the ability to control the chemical properties of the CNT–Si interface and of the CNT bundle layer. In spite of the encouraging performances of PV cells based on multiwall (MW) CNT, so far few efforts have been made in the study of this device compared to single wall (SW) CNT–Si interfaces. Here, surface and interface effects on the current–voltage characteristic curves of MW CNT–Si hybrid junctions are investigated through exposure to HF vapors and to 10 ppm-NO2 and compared to the effects detected in SW CNT–Si junctions. Quite similar results in term…
Characterization of high-temperature performance of cesium vapor cells with anti-relaxation coating
2017
© 2017 Author(s). Vapor cells with antirelaxation coating are widely used in modern atomic physics experiments due to the coating's ability to maintain the atoms' spin polarization during wall collisions. We characterize the performance of vapor cells with different coating materials by measuring longitudinal spin relaxation and vapor density at temperatures up to 95 °C. We infer that the spin-projection-noise-limited sensitivity for atomic magnetometers with such cells improves with temperature, which demonstrates the potential of antirelaxation coated cells in applications of future high-sensitivity magnetometers.