Search results for "Applied Physics"

showing 10 items of 1226 documents

Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed

mallintaminenMaterials sciencePOWER DIODESSchottky diodesSINGLE-EVENT BURNOUT114 Physical sciences01 natural sciencesIonpower semiconductor devicesBARRIER DIODESTHERMAL-DAMAGEchemistry.chemical_compoundMolecular dynamicspuolijohteetsilicon carbide0103 physical sciencesSilicon carbideIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and Quality010302 applied physicsta114ta213ionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilyINORGANIC INSULATORSSchottky diodemodelingHeavy ion irradiationIRRADIATIONElectronic Optical and Magnetic MaterialschemistryionsOptoelectronicsDegradation (geology)Heavy ionbusinession radiation effectsIEEE Transactions on Device and Materials Reliability
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EPR dosimetry intercomparison using smart phone touch screen glass

2014

International audience; This paper presents the results of an interlaboratory comparison of retrospective dosimetry using the electron paramagnetic resonance method. The test material used in this exercise was glass coming from the touch screens of smart phones that might be used as fortuitous dosimeters in a large-scale radiological incident. There were 13 participants to whom samples were dispatched, and 11 laboratories reported results. The participants received five calibration samples (0, 0.8, 2, 4, and 10 Gy) and four blindly irradiated samples (0, 0.9, 1.3, and 3.3 Gy). Participants were divided into two groups: for group A (formed by three participants), samples came from a homogene…

medicine.medical_specialtySmart phoneMass casualty eventStatistics as TopicBiophysicsEPR dosimetry[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]EPR Dosimetry Elecron Paramagnetic Resonance in phone touch screen glass.01 natural sciencesRetrospective dosimetry030218 nuclear medicine & medical imaging03 medical and health sciences0302 clinical medicineTest material0103 physical sciencesmedicineHumansDosimetryMedical physicsRadiometryGeneral Environmental Science010302 applied physicsRadiationDosimeterbusiness.industryElectron Spin Resonance SpectroscopyRadiological emergencySettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Critical levelHomogeneousCalibrationEpr dosimetryGlassbusinessNuclear medicine[SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processingCell Phone
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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

2016

An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…

mikroelektroniikkaNuclear and High Energy PhysicsBandgap voltage referencecircuit topologysingle-event transient (SET)Integrated circuit01 natural scienceslaw.inventionsingle event transientsCurrent mirrorlawpulse quenchingsingle-event effects (SEE)ionizationradiation hardening by design (RHBD)0103 physical sciencesElectronic engineeringMicroelectronicsAnalog single-event transient (ASET); bandgap voltage reference (BGR); charge sharing; CMOS analog integrated circuits; heavy ion; ionization; parasitic bipolar effect; pulse quenching; radiation effects; radiation hardening by design (RHBD); reference circuits; single-event effects (SEE); single-event transient (SET); space electronics; Voltage reference; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic EngineeringAnalog single-event transient (ASET)Electrical and Electronic Engineeringparasitic bipolar effectreference voltage010302 applied physicsPhysicsbandgap voltage reference (BGR)charge sharingta114ta213010308 nuclear & particles physicsbusiness.industryanalog integrated circuitsTransistorspace electronicsPulse durationheavy ionPulse (physics)Voltage referenceNuclear Energy and EngineeringPulse-amplitude modulationreference circuitsmicroelectronicsradiation effectsspace applicationsOptoelectronicsbusinessCMOS analog integrated circuitsIEEE Transactions on Nuclear Science
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Analytical models for the pulse shape of a superconductor-ferromagnet tunnel junction thermoelectric microcalorimeter

2022

AbstractThe superconductor-ferromagnet thermoelectric detector (SFTED) is a novel ultrasensitive radiation detector based on the giant thermoelectric effect in superconductor-ferromagnet tunnel junctions. We demonstrate analytical models and solutions in the time domain for a SFTED operated as a microcalorimeter (pulse excitation), in the linear small-signal limit. Based on these solutions, the signal current and temperature pulse response were studied for two different electrical circuit models, providing design conditions for stable and non-oscillatory response.Kindly check and confirm whether the corresponding author is correctly identified.The corresponding author is correct. 

mikroelektroniikkamagneetitCondensed Matter - Superconductivitytime-domainFOS: Physical sciencesanalytical modelApplied Physics (physics.app-ph)Physics - Applied PhysicsthermoelectricCondensed Matter PhysicsAtomic and Molecular Physics and OpticssuprajohteetSuperconductivity (cond-mat.supr-con)ilmaisimetCondensed Matter::SuperconductivitycalorimeterGeneral Materials Sciencekalorimetria
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Different Measurement Setup Configurations for Space Charge test in Mini Cable Specimens with the PEA Method

2019

Under DC stress, the space charge accumulation is believed one of the most responsible of dielectrics ageing. For this reason, due to the increase of the HVDC transmission, a recommendation has been proposed. The latter want to introduce the space charge measure, with the PEA method, in cable specimens during the prequalification or type tests. Considering the several issues related to this kind of measures the aim of the proposed work is find a measurement setup for mini cable specimens which is able to provide a clear and clean space charge profile. Therefore, different tests have been made in this work. In particular, the length of the cable specimen, the width of the pulse electrodes, a…

mini cable010302 applied physicsMaterials sciencePEA method020209 energyAcoustics02 engineering and technology01 natural sciencesMeasure (mathematics)Space chargeSpace chargePulse (physics)Stress (mechanics)Settore ING-IND/31 - ElettrotecnicaLength measurementCable specimenPEA for cableTransmission (telecommunications)Position (vector)0103 physical sciencesElectrode0202 electrical engineering electronic engineering information engineering2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)
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A new approach to calibrate the thermal conditions in space charge measurements on HVDC mini-cables

2019

The PEA method is currently widespread used for space charge measurements in mini-cables in order to qualify the behavior of semicon-dielectric-semicon compound under electric and thermal stress. The main goal of this research is to quantitatively evaluate the relationship between the thermal boundary conditions applied to cables or mini-cables and the maximum local electric field due to the accumulated space charge. Hitherto, several research groups have obtained thermal gradients over the dielectric's radius heating the conductor by Joule effect due to an induced current. In this paper, a numerical approach is offered to calibrate the heat exchange boundary conditions to apply to a sample…

mini-cable sample010302 applied physicsMaterials sciencePEA method020209 energyJoule effect02 engineering and technologyMechanicsDielectric01 natural sciencesSpace chargeSpace chargeConductorSettore ING-IND/31 - ElettrotecnicaElectric field0103 physical sciencesThermal0202 electrical engineering electronic engineering information engineeringthermal gradientBoundary value problemElectrical conductorHVDC cable2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)
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Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

2018

This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM swi…

nanoelectromechanical switchesComputer scienceGeneral Physics and Astronomy02 engineering and technologyReviewlcsh:Chemical technologylcsh:Technology01 natural sciencesReliability (semiconductor)0103 physical sciencesElectronic engineeringNanotechnologylcsh:TP1-1185General Materials ScienceElectrical and Electronic Engineeringlcsh:Science010302 applied physicsreliabilitylcsh:TOperating environmentnanocontactsNEM021001 nanoscience & nanotechnologylcsh:QC1-999NanoscienceInvestigation methodsSwitching cyclenanowireslcsh:Q0210 nano-technologylcsh:PhysicsBeilstein Journal of Nanotechnology
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Origins of radiation-induced attenuation in pure-silica-core and Ge-doped optical fibers under pulsed x-ray irradiation

2020

We investigated the nature, optical properties, and decay kinetics of point defects causing large transient attenuation increase observed in silica-based optical fibers exposed to short duration and high-dose rate x-ray pulses. The transient radiation-induced attenuation (RIA) spectra of pure-silica-core (PSC), Ge-doped, F-doped, and Ge + F-doped optical fibers (OFs) were acquired after the ionizing pulse in the spectral range of [∼0.8–∼3.2] eV (∼1500–∼380 nm), from a few ms to several minutes after the pulse, at both room temperature (RT) and liquid nitrogen temperature (LNT). Comparing the fiber behavior at both temperatures better highlights the thermally unstable point defects contribut…

optical fiberMaterials scienceOptical fiberAnalytical chemistryGeneral Physics and Astronomy02 engineering and technologymedicine.disease_cause01 natural scienceslaw.inventionx-ray irradiationlaw0103 physical sciencesmedicinepoint defectsRadiation induced absorptionFiberAbsorption (electromagnetic radiation)ComputingMilieux_MISCELLANEOUS010302 applied physics[PHYS]Physics [physics]F dopingAttenuationDopingSettore FIS/01 - Fisica SperimentaleLiquid nitrogen021001 nanoscience & nanotechnologyCrystallographic defectGe doping0210 nano-technologyUltraviolet
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Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition

2021

Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …

optical propertiesMaterials scienceAnnealing (metallurgy)elastic modulusresidual stress02 engineering and technologyoptiset ominaisuudet01 natural sciencesStress (mechanics)Atomic layer depositionResidual stressTiO0103 physical sciencesMaterials ChemistryTiO2Composite materialThin filmElastic modulus010302 applied physicsMetals and AlloysSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyhardnessSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialsfysikaaliset ominaisuudetAtomic Layer DepositionALDatomic layer depositionohutkalvot0210 nano-technologytitaanidioksidiRefractive indexLayer (electronics)
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Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

2018

The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…

optical propertiescrystal structureMaterials scienceSiliconta221Analytical chemistrychemistry.chemical_element02 engineering and technologyoptiset ominaisuudet01 natural sciencespiezoelectric filmsAtomic layer depositionCrystallinityImpurity0103 physical sciencesWaferta216010302 applied physicsta114Plasma activationWide-bandgap semiconductorSurfaces and InterfacesPlasmaatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and Filmsdermatologychemistryatomic layer deposition0210 nano-technologyJournal of Vacuum Science and Technology A
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