Search results for "Applied Physics"

showing 10 items of 1226 documents

Bifurcation analysis of a TaO memristor model

2019

This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs.

FOS: Computer and information sciencesstable fixed pointAcoustics and UltrasonicsBistabilityFOS: Physical sciencesComputer Science - Emerging Technologies02 engineering and technologyMemristorFixed pointTopology01 natural scienceslaw.inventionComputer Science::Emerging TechnologieslawMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesresistance switching memoriesmemristorBifurcation010302 applied physicsPhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsNonlinear Sciences - Chaotic Dynamics021001 nanoscience & nanotechnologyCondensed Matter PhysicsNonlinear Sciences - Adaptation and Self-Organizing SystemsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPulse (physics)Emerging Technologies (cs.ET)Bifurcation analysisbifurcationChaotic Dynamics (nlin.CD)0210 nano-technologyAdaptation and Self-Organizing Systems (nlin.AO)Journal of Physics D: Applied Physics
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THz electrical writing speed in an antiferromagnetic memory

2017

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work op…

FOS: Physical sciencesPhysics - Applied PhysicsApplied Physics (physics.app-ph)
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From Dye Sensitized to Perovskite Solar Cells, The Missing Link

2019

Fundamental working mechanisms of perovskite solar cells remain an elusive topic of research. Impedance Spectroscopy (IS) application to perovskite-based devices generates uncommon features and misleading outputs, mainly due to the lack of a stablished model for the interpretation of the results. In this work we control the perovskite precursor concentration to fabricate a series of perovskite-based solar cells with different amounts of perovskite absorber. Low concentration devices present the well-known dye sensitized solar cell (DSSCs) impedance pattern. As the amount of perovskite is increased, the characteristic impedance spectra of thin-film perovskite solar cells (PSCs) arises. This …

FOS: Physical sciencesPhysics - Applied PhysicsApplied Physics (physics.app-ph)
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Optimized substrates and measurement approaches for Raman spectroscopy of graphene nanoribbons

2019

The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and to track their quality upon substrate transfer. We present a Raman-optimized (RO) device substrate and an optimized mapping approach that allows for acquisition of high-resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO2/Si substra…

Fabrication530 PhysicsFOS: Physical sciences02 engineering and technologySubstrate (electronics)01 natural sciencessymbols.namesakeQuality (physics)540 Chemistry0103 physical sciencesRibbon010302 applied physicsCondensed Matter - Materials Sciencebusiness.industryMaterials Science (cond-mat.mtrl-sci)021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCharacterization (materials science)Molecular vibrationsymbols570 Life sciences; biologyOptoelectronics0210 nano-technologybusinessRaman spectroscopyGraphene nanoribbons
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Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

2019

This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 &deg

FabricationMaterials science4H-SiCAnnealing (metallurgy)02 engineering and technology01 natural scienceslcsh:TechnologyArticlechemistry.chemical_compound0103 physical sciencesSilicon carbideGeneral Materials ScienceComposite materiallcsh:MicroscopyOhmic contactlcsh:QC120-168.85010302 applied physicsion-implantationDopantlcsh:QH201-278.5lcsh:TContact resistanceohmic contacts021001 nanoscience & nanotechnologyAcceptor3. Good healthIon implantationchemistrylcsh:TA1-2040lcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineering0210 nano-technologylcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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Controlled solution-based fabrication of perovskite thin films directly on conductive substrate

2021

Abstract Organometallic perovskites are one of the most investigated materials for high-efficiency thin-film devices to convert solar energy and supply energy. In particular, methylammonium lead iodide has been used to realize thin-film perovskite solar cells, achieving an efficiency higher than 20%. Different fabrication procedures based on the spin-coating technique have been proposed, which do not ensure homogenous morphologies. In this work, we present a scalable process to fabricate methylammonium lead iodide thin films directly on conductive substrates, consisting of electrodeposition and two subsequent chemical conversions. A thorough investigation of the morphological, structural an…

FabricationMaterials scienceAbsorption spectroscopyChemical conversion Electrodeposition Organometallic perovskite Solar cell Thin filmIodide02 engineering and technologySubstrate (electronics)01 natural sciences0103 physical sciencesSettore ING-IND/17 - Impianti Industriali MeccaniciMaterials ChemistryThin filmAbsorption (electromagnetic radiation)Perovskite (structure)010302 applied physicschemistry.chemical_classificationbusiness.industrySettore FIS/01 - Fisica SperimentaleMetals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSettore ING-IND/23 - Chimica Fisica ApplicatachemistryOptoelectronics0210 nano-technologybusinessLayer (electronics)
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Superconducting tunnel junction fabrication on three-dimensional topography via direct laser writing

2020

Superconducting junctions are widely used in multitude of applications ranging from quantum information science and sensing to solid-state cooling. Traditionally, such devices must be fabricated on flat substrates using standard lithographic techniques. In this study, we demonstrate a highly versatile method that allows for superconducting junctions to be fabricated on a more complex topography. It is based on maskless direct laser writing (DLW) two-photon lithography, which allows writing in 3D space. We show that high-quality normal metal-insulator-superconductor (NIS) tunnel junctions can be fabricated on top of a 20 $\mu$m tall three-dimensional topography. Combined with more advanced r…

FabricationMaterials sciencePhysics and Astronomy (miscellaneous)FOS: Physical sciences02 engineering and technologyengineering.material01 natural scienceslaw.inventionSuperconductivity (cond-mat.supr-con)Coatinglaw0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum information scienceLithography010302 applied physicsSuperconductivityCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryCondensed Matter - Superconductivity021001 nanoscience & nanotechnologyLaserResistengineeringOptoelectronicsSuperconducting tunnel junction0210 nano-technologybusiness
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CESAR: Cryogenic Electronics for Space Applications

2013

Ultra-low temperature sensors provide unprecedented performances in X-ray and far infrared astronomy by taking advantage of physical properties of matter close to absolute zero. CESAR is an FP7 funded project started in December 2010, that gathers six European laboratories around the development of high performances cryogenic electronics. The goal of the project is to provide far-IR, X-ray and magnetic sensors with signal-processing capabilities at the heart of the detectors. We present the major steps that constitute the CESAR work, and the main results achieved so far.

Far-infrared bolometersHEMTSNanotechnologyFar-infrared astronomySpace (mathematics)01 natural sciences030218 nuclear medicine & medical imagingNOISE03 medical and health sciencesCryogenic electronics0302 clinical medicineDevelopment (topology)Settore FIS/05 - Astronomia E Astrofisica0103 physical sciencesHigh impedance detectorsGeneral Materials ScienceElectronics4.2 KVOLTAGEAerospace engineering010302 applied physicsPhysicsbusiness.industryDetectorX-ray microcalorimetersCondensed Matter PhysicsAtomic and Molecular Physics and OpticsCryogenic electronics · High impedance detectors · X-ray microcalorimeters · Far-infrared bolometers1 KHZ[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]business
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Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy

2019

Björn Matthey (Fraunhofer IKTS, Dresden) is acknowledged for providing HfO2 and ZrO2 powders on short notice after DESY’s renowned customs office punished us. Parts of this research were carried out at Petra III at DESY, a member of the Helmholtz Association (HGF). The experiments on single Si:HfO2 thin film samples were performed at the CLAESS beamline at ALBA Synchrotron with the collaboration of ALBA staff. We would like to thank Edmund Welter for assistance (in using beamline P65) and DESY for enabling this research for proposal no. 20160591 and for travel support. T.S. acknowledges the German Research Foundation (DFG) for funding this work in the frame of the project “Inferox” (project…

Ferroelectrics670Materials sciencePolymers and PlasticsAbsorption spectroscopyexafsExtended X-ray absorption fine structure X-ray absorption near edge structure Ferroelectrics Hafnium oxide Zirconium oxide02 engineering and technologydopants01 natural sciencesferroelectric propertieshafnium oxideTetragonal crystal systemformer soviet-unionzirconium oxideddc:6700103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Zirconium oxideX-ray absorption near edge structureThin filmx-ray absorption near edge structureExtended X-ray absorption fine structureHafnium oxideErweiterte Röntgenabsorptionsfeinstruktur Röntgenabsorptionsstruktur in Randnähe Ferroelektrika Hafniumoxid Zirkoniumoxid010302 applied physicsX-ray absorption spectroscopybiologyExtended X-ray absorption fine structureferroelectricsMetals and Alloyshfo2021001 nanoscience & nanotechnologyHafniabiology.organism_classificationXANESstabilizationdielectricsElectronic Optical and Magnetic Materialsoxygen-ion conductorselectrochemistryextended x-ray absorption fine structureChemical physicsCeramics and Compositesinterface0210 nano-technologyMonoclinic crystal systemActa Materialia
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Effects of Mn doping on dielectric properties of ferroelectric relaxor PLZT ceramics

2017

This work has been supported by Latvian state research program IMIS2 .

FerroelectricsMaterials scienceAnalytical chemistryPLZTGeneral Physics and Astronomychemistry.chemical_elementNanotechnology02 engineering and technologyDielectric01 natural sciencesOxygenIonsymbols.namesake0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Point defectsGeneral Materials ScienceCeramicDebye010302 applied physicsRelaxation (NMR)021001 nanoscience & nanotechnologyCrystallographic defectDipolechemistryDielectric propertiesvisual_artvisual_art.visual_art_mediumsymbolsImpurities in perovskites0210 nano-technologyMn impurityCurrent Applied Physics
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