Search results for "Applied Physics"
showing 10 items of 1226 documents
A new nature of microporous architecture with hierarchical porosity and membrane template via high strain rate collision
2019
Abstract This paper presents the formation of an unusual porous structure at Al/Al interface joined by magnetic pulse welding. The porous structure consists of a hierarchical microporous architecture with pore size of less than 2 µm that represents more than 80% over the whole area, in which 38% of them are sub-micron size pores. It also exhibits ultra-thin wall, sufficiently thin enough to behave as an electron-transparent material with a wall thickness of 50 nm. The formation of this porous structure is attributed to a cavitation process of a molten material in three stages including, (1) nucleation, (2) growth and coalescence and (3) solidification. Further analysis of this cavitation pr…
Near-field probing of active photonic-crystal structures
2002
We report a study of the optical near field of an active integrated component operating near the 1.55-mum telecommunications wavelength. The device is based on a two-dimensional photonic crystal etched in a suspended InP membrane. Topographic as well as optical information is collected by use of a scanning near-field optical microscope in collection mode, providing information about the local distribution of the losses.
Optical Probing (EOFM/TRI): A large set of complementary applications for ultimate VLSI
2013
International audience; Electro Optical Techniques (EOFM: Electro Optical Frequency Mapping and EOP: Electro Optical Probing) and Dynamic Light Emission Techniques (TRE: Time Resolved Emission and TRI: Time Resolved Imaging) are dynamic optical probing techniques widely used at IC level for design debug and defect localization purpose. They can pinpoint the origin of timing issue or logic fault in up to date CMOS devices. Each technique has its advantages and its drawbacks allowing a common set of applications and more specific ones. We have been involved in the development of the most advanced techniques related to EOFM and TRI on various devices (down to 28nm technology). What we can expe…
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
2017
One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS2 FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS2 surface can be tailored at nanoscale using soft O-2 plasma treatments. The morphological, chemical, and electrical modifications of MoS2 surface under different plasma conditions were investigated by several microscopi…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Resonance laser ionization spectroscopy of tellurium
2019
Abstract Resonance ionization schemes for tellurium are investigated with a resonance ionization laser ion source and Ti:Sapphire lasers for fundamental research applications. We present the first three-step resonance ionization spectra of atomic Te. Several autoionizing Rydberg series converging to the first excited state of Te+ are observed and assigned to 5p3 (2Do3/2) ns and nd configurations. Our results include confirmation and significant expansion of the Rydberg series previously reported as well as observation of three new series. From the series convergence limits the ionization potential of tellurium is revised to be 72,669.006(42)stat(20)sys cm−1.
Effective electrical conductivity of carbon nanotube–epoxy nanocomposites
2016
The electrical conductivity of carbon nanotube–epoxy composites is investigated analytically and experimentally. The theoretical predictions of the effective electrical conductivity of carbon nanotube–epoxy composites were performed by the analytical approach based on a micromechanical model of composites. The parametric analysis carried out revealed an influence of geometrical and electrical parameters of the micromechanical model on the effective electrical conductivity of carbon nanotube–epoxy nanocomposite. The nanocomposites made from the DGEBA-based and RTM6 epoxy resins filled with different weight content of Baytubes C150P and N7000 multi-walled carbon nanotubes were prepared. The …
Parametric study of laser welding of copper to austenitic stainless steel
2018
Abstract Welding of copper to stainless steel is challenging because of sharp difference in thermophysical properties of materials and the presence of miscibility gap in Fe-Cu system. The parametric study of continuous Yb:YAG laser welding between copper and austenitic stainless steel 316L has been performed. The influence of laser power, welding speed and beam offset from joint line on weld composition, microstructure and tensile properties was studied. The corrosion behaviour of the welds was evaluated in 0.1M NaCl with the potentiostatic pulse testing method, salt fog and immersion tests. In function of copper dilution in the melted zone, different types of microstructure were observed: …
Surface properties of AlInGaN/GaN heterostructure
2016
Abstract Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.
Low-Power consumption Franz-Keldysh effect plasmonic modulator
2014
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.