Search results for "Atomic layer"
showing 10 items of 140 documents
Wettability and compositional analysis of hydroxyapatite films modified by low and high energy ion irradiation
2008
Abstract Hydroxyapatite-like thin films on silicon substrate were deposited using atomic layer deposition and were subjected to irradiation with Ar ions accelerated through 0.6–1.2 kV as well as 2 MeV 16 O + ions. After low energy Ar irradiation a significant reduction in contact angle was observed. However, the Ca/P atomic ratio remained unchanged. No reduction in contact angle was seen for high energy 16 O + irradiation. Atomic force microscopy showed the enhancement of floral-like pattern after low energy Ar bombardment while high energy oxygen irradiation lead to raised islands on as-deposited films.
Coating and functionalization of high density ion track structures by atomic layer deposition
2016
In this study flexible TiO 2 coated porous Kapton membranes are presented having electron multiplication properties. 800 nm crossing pores were fabricated into 50 m thick Kapton membranes using ion track technology and chemical etching. Consecutively, 50 nm TiO 2 films were deposited i nto the pores of the Kapton membranes by atomic layer deposition using Ti( i OPr) 4 and water as precursors at 250 °C. The TiO 2 films and coated membranes were studied by scanning electro n microscopy (SEM), X - ray diffraction (XRD) and X - ray reflectometry (XRR). Au metal electrod e fabrication onto both sides of the coated foils was achieved by electron beam evaporation. The electron multipliers were o…
Low temperature atomic layer deposition of noble metals using ozone and molecular hydrogen as reactants
2013
Abstract Atomic layer deposition (ALD) of noble metals by thermal processes has relied mostly on the use of molecular oxygen as a reactant at temperatures of 200 °C and above. In this study, the concept of using consecutive ozone and molecular hydrogen pulses with noble metal precursors in ALD is introduced for palladium, rhodium, and platinum metals. This approach facilitates the growth of noble metal thin films below 200 °C. Also the ALD of palladium oxide thin films is demonstrated by the ozone-based chemistry. The growth rates, resistivities, crystallinities, surface roughnesses, impurity contents, and adhesion of the films to the underlying Al 2 O 3 starting surface are reported and th…
Control of Oxygen Nonstoichiometry and Magnetic Property of MnCo2O4 Thin Films Grown by Atomic Layer Deposition
2010
Spinel-structured (Mn,Co)3O4 thin films were reproducibly fabricated by atomic layer deposition (ALD) using Mn(thd)3, Co(thd)2, and ozone as precursors. A full control of the cation ratio was achieved in the temperature interval 140−160 °C within which also the growth rate remained constant. Precise control of the oxygen content of as-deposited MnCo2O4+δ films was achieved through postdeposition heat treatments at prefixed temperatures in air and N2 atmospheres, as evidenced from the monotonous increases of both the unit cell volume and the Curie temperature (TC) with increasing annealing temperature/decreasing oxygen partial pressure. The TC value varied from 92 K for the as-deposited MnCo…
Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
2017
Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer-by-layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface pass…
Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3
2015
Abstract We study the impact of ozone-based Al2O3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration…
Photoelectrocatalysis of paracetamol on Pd–ZnO/ N-doped carbon nanofibers electrode
2021
Abstract The presence of pharmaceuticals in water bodies has become a major concern in recent years. An efficient and innovative way of eliminating these pollutants is through photoelectrocatalytic (PEC) degradation owing to its environmental sustainability and its ability to remove recalcitrant pollutants. In this study, palladium loaded zinc oxide/carbon nanofibers (CZnO–Pd) were employed as a novel photoanode for PEC degradation of paracetamol. The CZnO–Pd composite was prepared through electrospinning and atomic layer deposition (ALD). The obtained materials were characterized. Photoelectrochemical studies were carried out with linear sweep voltammetry and chronoamperometry. The removal…
Low-Temperature Atomic Layer Deposition of Crystalline and Photoactive Ultrathin Hematite Films for Solar Water Splitting
2015
We developed a low-temperature atomic layer deposition route to deposit phase pure and crystalline hematite (alpha-Fe2O3) films at 230 degrees C without the need for postannealing. Homogenous and conformal deposition with good aspect ratio coverage was demonstrated on a nanostructured substrate and analyzed by transmission electron microscopy. These as-deposited alpha-Fe2O3 films were investigated as photoanodes for photoelectrochemical water oxidation and found to be highly photoactive. Combined with a TiO2 underlayer and a low-cost Ni(OH)(2) catalyst, hematite films of less than 10 nm in thickness reached photocurrent densities of 0.3 mA cm(-2) at 1.23 V vs RHE and a photocurrent onset po…
Study on Structural, Mechanical, and Optical Properties of Al2O3–TiO2 Nanolaminates Prepared by Atomic Layer Deposition
2015
Structural, optical, and mechanical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray reflectivity (XRR), energy dispersive X-ray spectroscopy (EDX), ellipsometry, UV–vis spectroscopy, photoluminescence (PL) spectroscopy, and nanointendation to characterize the Al2O3/TiO2 nanolaminates. The main structural, optical, and mechanical parameters of Al2O3/TiO2 nanolaminates (thickness, grain size, refractive index, extinction coefficient, band gap, hardness, and Young’s module) were calculated. It was established that with decreasing of the layer thickness, the …
Structural and optical properties of TiO2–Al2O3nanolaminates produced by atomic layer deposition
2015
Structural and optical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed Raman spectroscopy, transmission electron microscopy (TEM), X-Ray reflectivity (XRR), UV-Vis spectroscopy, and photoluminescence (PL) spectroscopy to characterize the Al2O3/TiO2 nanolaminates. The main structural and optical parameters of Al2O3/TiO2 nanolaminates were calculated. It was established that with decreasing of the layer thickness, the value of band gap energy increases due to the quantum size effect related to the reduction of the nanograins size. It was also shown that there is an interdiffusion layer at the Al2O3/TiO2 interface which plays a…