Search results for "Atomic"
showing 10 items of 27529 documents
Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions
2017
R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.
First experiments on applying the gasdynamic ECR ion source for negative hydrogen ion production
2017
This article has no abstract. peerReviewed
Computational volumetric reconstruction of integral imaging with improved depth resolution considering continuously non-uniform shifting pixels
2018
Abstract In this paper, we propose a new computational volumetric reconstruction technique of three-dimensional (3D) integral imaging for depth resolution enhancement by using non-uniform and integer-valued shifting pixels. In a typical integral imaging system, 3D images can be recorded and visualized using a lenslet array. In previous studies, many computational reconstruction techniques such as computational volumetric reconstruction and pixel of elemental images rearrangement technique (PERT) have been reported. However, a computational volumetric reconstruction technique has low visual quality and depth resolution because low-resolution elemental images and uniformly distributed shiftin…
Injected 1+ ion beam as a diagnostics tool of charge breeder ECR ion source plasmas
2015
International audience; Charge breeder electron cyclotron resonance ion sources (CB-ECRIS) are used as 1+ →n+ charge multiplication devices of post-accelerated radioactive ion beams. The charge breeding process involves thermalization of the injected 1+ ions with the plasma ions in ion–ion collisions, subsequent ionization by electron impact and extraction of the n+ ions. Charge breeding experiments of 85Rb and 133Cs ion beams with the 14.5 GHz PHOENIX CB-ECRIS operating with oxygen gas demonstrate the plasma diagnostics capabilities of the 1+ injection method. Two populations can be distinguished in the m/q-spectrum of the extracted ion beams, the low (1+ and 2+) charge states repres…
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…
Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
2006
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…
New fine structures resolved at the ELNES Ti-L2,3 edge spectra of anatase and rutile: comparison between experiment and calculation.
2010
Abstract Anatase and rutile Ti- L 2,3 edge spectra were measured in electron energy loss spectroscopy (EELS) using a transmission electron microscope (TEM) coupled to a CEOS Cs-probe corrector, an omega-type monochromator and an in-column omega-type energy filter fully corrected for 2nd order aberrations. Thanks to the high energy resolution, high electron probe current and high stability achieved under this instrumental configuration, new fine structures, never reported before, were resolved at the L 3 band of both rutile and anatase. The data suggest that new peaks also exist in the L 2 e g band. The experimental spectra are compared with multichannel multiple scattering (MMS) calculation…
MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms
2016
The contribution of electronic and nuclear damage mechanisms in the modification of structure and micromechanical properties of LiF crystals irradiated with 52, 224, and 450 MeV Xe ions at fluences 1010–1014 ions cm−2 has been studied. The ion-induced formation of dislocations and hardening in LiF at fluences above 1010 ions cm−2 has been observed. The depth profiles of nanoindentation show a joint contribution of electronic excitation and nuclear (impact) mechanisms to the ion-induced hardening. The electronic excitation mechanism dominates in the major part of the ion range while the impact mechanism prevails in a narrow zone at the end of the ion range. The efficiency of hardening produc…
The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
2017
Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …