Search results for "BAND"
showing 10 items of 2610 documents
Synthesis and characterization of GaN/ReS2, ZnS/ReS2 and ZnO/ReS2 core/shell nanowire heterostructures
2020
This research was funded by the ERDF project “Smart Metal Oxide Nanocoatings and HIPIMS Technology”, project number: 1.1.1.1/18/A/073. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART².
A comprehensive study of structure and properties of nanocrystalline zinc peroxide
2022
Abstract Nanocrystalline zinc peroxide (nano-ZnO2) was synthesized through a hydrothermal process and comprehensively studied using several experimental techniques. Its crystal structure was characterized by X-ray diffraction, and the average crystallite size of 22 nm was estimated by Rietveld refinement. The temperature-dependent local environment around zinc atoms was reconstructed using reverse Monte Carlo (RMC) analysis from the Zn K-edge X-ray absorption spectra. The indirect band gap of about 4.6 eV was found using optical absorption spectroscopy. Lattice dynamics of nano-ZnO2 was studied by infrared and Raman spectroscopy. In situ Raman measurements indicate the stability of nano-ZnO…
Correlation of local disorder and electronic properties in the Heusler alloy Co2Cr0.6Fe0.4Al
2007
For the fully ordered Heusler alloy Co2Cr0.6Fe0.4Al half-metallic ferromagnetism has been predicted. Local disorder other than the Al–Cr/Fe (B2)-type disorder is known to destroy the half-metallic bandgap. The usage of appropriate buffer layers improves the structural quality of thin films. We correlate the structural properties of thin magnetron sputtered films determined by x-ray diffraction with details of the x-ray magnetic circular dichroism spectra. From the value of the magnetic moment located at the Cr atom and features of the Co absorption spectra we conclude that the buffer layers lead also to an improvement in the local atomic order. The atomic ordering gradually approaches the l…
Covalent bonding and the nature of band gaps in some half-Heusler compounds
2005
Half-Heusler compounds \textit{XYZ}, also called semi-Heusler compounds, crystallize in the MgAgAs structure, in the space group $F\bar43m$. We report a systematic examination of band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18- electron half-Heusler compounds through first-principles density functional calculations. We find the most appropriate description of these compounds from the viewpoint of electronic structures is one of a \textit{YZ} zinc blende lattice stuffed by the \textit{X} ion. Simple valence rules are obeyed for bonding in the 8-electron compound. For example, LiMgN can be written Li$^+$ + (MgN)$^-$, and (MgN)$^-$, which is isoelectronic wi…
Modeling and Experimental Verification of Ultrasound Transmission in Electro Insulation Oil
2012
A verification study of ultrasound transmission numerical simulation results with experiment results is presented in this paper. The work considers a model of a transformer tank which is filled with electro insulating oil. In the experiment, performed under laboratory conditions, an ultrasound wave is generated by a piezoelectric transducer that is fixed in the centre of the tank and measured by another transducer mounted inside the tank at three distances: 10, 20 and 30 cm from the sound source. The transducer is able to measure and generate acoustic waves in the ultrasound frequency band up to 1 MHz. The simulation considers numerical calculation of acoustic pressure distribution inside t…
Thickness dependence of anomalous Hall conductivity in L10-FePt thin film
2019
L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (from impurity scatterings). In the bulk limit of L10 ordered FePt films, the AHE is considered to be dominated by the intrinsic contribution, which mainly comes from the strong spin-orbit interaction (SOI) of Pt atoms and exchange-splitting of Fe atoms. The study of anomalous Hall conductivity (AHC) of L10-FePt thin films is of particular interest for its application in spintronic devices. In order to reduce the effects of defects such as grain boundaries, we chose SrTiO3 as the substrate which has a ver…
Low-frequency band gap in cross-like holey phononic crystal strip
2018
International audience; A silicon-based cross-like holey phononic crystal (PnC) strip is proposed for the control of elastic waves in the field of micro-electro-mechanical systems (MEMS). The goal is to obtain a broad bandgap at low frequencies with a lightweight structure. In this respect, the effects of varying the in-plane and the out-of-plane geometry parameters are discussed. After design, a gap-to-midgap ratio of 47% is obtained with an intermediate filling fraction of the solid material and a small thickness of the strip. The band gap can be moved to an extremely low frequency range while keeping the strip significantly smaller than previously reported PnC strips. The transmission pr…
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
1999
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…
High-resolution stimulated Raman spectroscopy of O2
1992
Abstract The S S and O O branches of the fundamental vibrational band of molecular oxygen in its electronic ground state have been resolved for the first time in Raman spectroscopy. The spectra have been observed, at room temperature and low pressure, with a stimulated Raman scattering (S.R.S.) spectrometer including a multipass cell. From these accurate Raman data combined with microwave data, we have improved the values of the vibrational, rotational, spin-spin, and spin-rotation interactions constants in the v = 1 vibrational state. Moreover, Raman Q branches of the first and second hot-bands have been recorded, allowing us to determine a set of molecular parameters for the v = 2 and v =…
Zinc oxide nanocrystals as electron injecting building blocks for plastic light sources
2012
Hybrid inorganic–organic light emitting devices (HyLEDs) employing ZnO nanocrystals as one of their metal oxide contacts lead to very bright devices on plastic substrates with performances superior to those obtained from the rigid counterparts employing planar films of bulk ZnO. The superior performance is related to the increase in the bandgap of the ZnO nanocrystals caused by quantum confinement effects. We demonstrate that this effect diminishes with increasing annealing temperature of the ZnO nanocrystal layer due to a gradual decrease of the bandgap towards the bulk ZnO value. Therefore, best performances were obtained with room temperature processing of the ZnO nanocrystals.