Search results for "BAND"
showing 10 items of 2610 documents
Study of the defects in La3Ta0.5Ga5.5O14 single crystals
2016
Abstract Defects that are formed during crystal growth pose a serious obstacle for potential application of La 3 Ga 5.5 Ta 0.5 O 14 (LGT) as a laser or piezoelectric crystal. We have performed the study of the defects origin in LGT crystals grown in different atmospheres using optical, EPR and time-resolved luminescence characterization methods. The absorption bands detected in the transparency region at 290, 360 and 490 nm ( T =300 K) demonstrate different dependence on crystal annealing in vacuum and air. EPR analysis demonstrated that the defects responsible for these bands are non-paramagnetic. X-ray irradiation results in hole trapping by oxygen ions thus forming O − centers perturbed …
The influence of composition on band gap and dielectric constant of anodic Al-Ta mixed oxides
2015
Al-Ta mixed oxides were grown by anodizing sputter-deposited Al-Ta alloys of different composition. Photocurrent spectra revealed a band gap, Eg, slightly independent on Ta content and very close to that of anodic Ta2O5 (∼4.3 eV) with the exception of the anodic film on Al-10at% Ta, which resulted to be not photoactive under strong anodic polarization. The photoelectrochemical characterization allowed to estimate also the oxides flat band potential and to get the necessary information to sketch the energetic of the metal/oxide/electrolyte interfaces. Impedance measurements allowed to confirm the formation of insulating material and to estimate the dielectric constant of the oxides, which re…
Tailoring of the Solid State Properties of Al–Nb Mixed Oxides: A Photoelectrochemical Study
2013
Al–Nb containing mixed oxides were grown by anodizing sputter-deposited Al–Nb alloys of different compositions. A photoelectrochemical investigation was carried out in order to estimate the band gap, flat band potential, and conductivity type of these oxides as a function of their composition. The dependence of the band gap on the composition of mixed sp–d metal oxides has been rationalized by using a semiempirical correlation between the difference of electronegativity and band gap of oxides proposed in the literature some years ago and recently tested for regular d–d metal mixed oxides. The band gap increase observed as a function of Al content into the oxides seems mainly depending on th…
Physicochemical characterization and photoelectrochemical analysis of iron oxide films
2013
Iron oxide films with a nanoporous structure were grown by anodizing sputter-deposited Fe in a fluoride containing ethylene glycol solution and annealed under air exposure at different temperatures. X-ray diffraction and Raman spectroscopy allowed to identify the presence of hematite and/or magnetite after thermal treatment for films annealed at T ≥ 400 °C under air exposure. According to GDOES compositional depth profiles, the thermal treatment sensitively reduced the amount of fluoride species incorporated into the film during the anodizing process. A band gap value of ~2.0 eV was estimated for all the investigated layers, while a flat band potential dependent on both the growth condition…
Corrosion behaviour of a highly alloyed austenitic alloy UB6 in contaminated phosphoric acid
2013
The influence of temperature (20–80°C) on the electrochemical behaviour of passive films anodically formed on UB6 stainless steel in phosphoric acid solution (5.5 M H3PO4) has been examined by using potentiodynamic curves, electrochemical impedance spectroscopy, and Mott-Schottky analysis. UB6 stainless steel in contaminated phosphoric acid is characterised by high interfacial impedance, thereby, illustrating its high corrosion resistance. The obtained results show that the films behave as n-type and p-type semiconductors in the potential range above and below the flat band potential, respectively. This behaviour is assumed to be the consequence of the semiconducting properties of the iron …
Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells
2015
We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters-characteristic of such devices-with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depe…
Porphyrin Antenna-Enriched BODIPY–Thiophene Copolymer for Efficient Solar Cells
2018
International audience; Low bandgap A−π–D copolymer, P(BdP-DEHT), consisting of alternating BOronDIPYrromethene (BODIPY) and thiophene units bridged by ethynyl linkers, and its porphyrin-enriched analogue, P(BdP/Por-DEHT), were prepared, and their optical and electrochemical properties were studied. P(BdP-DEHT) exhibits strong absorption in the 500–800 nm range with an optical bandgap of 1.74 eV. On the basis of cyclic voltammetry, the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels are evaluated to be −5.40 and −3.66 eV, respectively. After the anchoring of zinc(II) porphyrin on the BODIPY unit, P(BdP/Por-DEHT) displays broadened absor…
Suppression of electron trapping by quantum dot emitters using a grafted polystyrene shell
2019
A fundamental problem of adding chromophores to an organic host is that their smaller band gap leads to severe trapping of either electrons or holes, resulting in strongly unbalanced transport. We demonstrate that electron trapping by an inorganic quantum dot (QD) in a conjugated polymer host can be suppressed by functionalizing its shell with a thin insulating polystyrene layer. The polystyrene shell not only reduces trapping, but also suppresses detrapping of captured electrons, resulting in increased charging of the QDs with subsequent voltage scans, after initial charging, a red-emitting hybrid polymer:QD light-emitting diode is obtained with voltage independent electroluminescence spec…
Photoelectrochemical monitoring of rouging and de-rouging on AISI 316L
2017
Electrochemical conditions for inducing rouging on surface of AISI 316L in quasi neutral aqueous solution are studied. Potentiostatic polarization at 0.6 V vs. SSC at pH ∼ 7 allowed growth of colourless passive films with a band gap slightly lower than that estimated for the oxide grown on the SS surface by air exposure due to chromium dissolution. Under stronger anodic polarization (UE = 1.5 V vs. SSC) coloured passive films are formed, mainly constituted by iron oxide according to their band gap (Eg = 2.0 eV). Etching in citric acid at 60 °C results to be effective in removing rouging.
Photoelectrochemical evidence of inhomogeneous composition at nm length scale of anodic films on valve metals alloys
2016
Abstract Anodic films of different thickness (∼30 nm and 70 nm) were grown by anodizing sputtering-deposited Ta-19at% Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was…