Search results for "BAND"
showing 10 items of 2610 documents
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
2009
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in $n$-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.
Effect of oxygen deficiency on the radiation sensitivity of sol-gel Ge-doped amorphous SiO2
2008
We report experimental investigation by electron paramagnetic resonance (EPR) measurements of room temperature γ-ray irradiation effects in sol-gel Ge doped amorphous SiO2. We used materials with Ge content from 10 up to 104 part per million (ppm) mol obtained with different preparations. These latter gave rise to samples characterized by different extents of oxygen deficiency, estimated from the absorption band at ~5.15 eV of the Ge oxygen deficient centers (GeODC(II)). The irradiation at doses up to ~400 kGy induces the E'-Ge, Ge(1) and Ge(2) paramagnetic centers around g ~ 2 with concentrations depending on Ge and on GeODC(II) content. We found correlation between Ge(2) and GeODC(II) con…
Strukturelle Veränderungen in säuregeätztem Schmelz im konfokalen Laser-Scanning-Mikroskop
1996
The aim of the present investigation was to elucidate structural alternations in enamel subjected to acid etch technique and treatment under remineralizing conditions by means of a new microscopy technique known as confocal laser scanning microscopy (CLSM). Blocks of enamel were treated with 37% phosphoric acid and exposed for 3 weeks to an oral environment. Tomographic CLSM images were subsequently obtained and compared with controls. CLSM proved to be a reliable, highly reproducible and simple method of qualitative assessment of structural changes occurring on the surface of enamel and in areas below the surface as deep as 100 microns or more. Structural alterations associated with acid a…
Eddy-Current Imaging with Nitrogen-Vacancy Centers in Diamond
2018
We demonstrate microwave-free eddy-current imaging using nitrogen-vacancy centers in diamond. By detecting the eddy-current induced magnetic field of conductive samples, we can distinguish between different materials and shapes and identify structural defects. Our technique allows for the discrimination of different materials according to their conductivity. The sensitivity of the measurements is calculated as 8$\times 10 ^{5}$\,S/m\,$\sqrt[]{\textrm{Hz}}$ at 3.5\,MHz, for a cylindrical sample with radius $r_0$\,=\,1\,mm and height $h$\,=\,0.1\,mm (volume $\sim$\,0.3\,mm$^3$), at a distance of 0.5\,mm. In comparison with existing technologies, the diamond-based device exhibits a superior ba…
Fabrication and characterization of ZnO/Zn2TiO4/ZnAl2O4 composite films by using magnetron sputtering with ceramic targets
2022
Abstract Transparent conducting oxides (TCO), including ZnO/Zn2TiO4/ZnAl2O4 composite films, are of considerable importance in optoelectronic applications. We fabricated composite film assisted with DC magnetron sputtering using ceramic target material (ZnO, TiO2, and Al2O3 powders mixture). The influence of processing gases composition (0–50% O2–Ar) on film characteristics, including structural, optical, and electronic properties, is assessed. All films contain hexagonal wurtzite ZnO structure and ZnAl2O4, Zn2TiO4 spinel phases, with (002), (100), and (101) as dominant orientation by increasing oxygen contents. The transmittance of deposited films is above 81% (except for 50% oxygen), and …
Photoelectrochemical characterization of Cu2O-nanowire arrays electrodeposited into anodic alumina membranes
2007
Perfectly aligned nanowire arrays of polycrystalline Cu2O were grown by template-pulsed electrodeposition from a cupric acetate-sodium acetate bath into anodic alumina membranes (AAM). The photoelectrochemical behavior of arrays with different nanowire lengths (0.5 mu m and 2 mu m) was investigated in neutral solution, and the results compared to those pertaining to Cu2O films grown with the same procedure. Although all samples displayed the same indirect bandgap (similar to 1.9 eV), differences were observed both in photocurrent intensity and sign. The latter changed with potential and wavelength in different ways for nanowires and films, revealing a different defect concentration in the t…
Large area perovskite light-emitting diodes by gas-assisted crystallization:
2019
Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…
Making Graphene Luminescent by Direct Laser Writing
2020
Graphene is not intrinsically luminescent, due to a lack of bandgap, and methods for its creation are tricky for device fabrication. In this study, we create luminescent graphene patterns by a simple direct laser writing method. We analyze the graphene using Raman spectroscopy and find that the laser writing leads to generation of line defects after initial formation of point defects. This Raman data enables us to create a model that explains the luminescence by a formation of small domains due to confinement of graphene by line defects, which is conceptually similar to the mechanism of luminescence in graphene quantum dots. peerReviewed
Exfoliation of Alpha-Germanium: A Covalent Diamond-Like Structure
2021
2D materials have opened a new field in materials science with outstanding scientific and technological impact. A largely explored route for the preparation of 2D materials is the exfoliation of layered crystals with weak forces between their layers. However, its application to covalent crystals remains elusive. Herein, a further step is taken by introducing the exfoliation of germanium, a narrow-bandgap semiconductor presenting a 3D diamond-like structure with strong covalent bonds. Pure α-germanium is exfoliated following a simple one-step procedure assisted by wet ball-milling, allowing gram-scale fabrication of high-quality layers with large lateral dimensions and nanometer thicknesses.…
Optical Spectra and Direct Optical Transitions in Amorphous and Crystalline ZnO Thin Films and Powders
2010
Comparative studies of ZnO crystalline and amorphous thin films and nanocrystalline powders are reported. The UV-visible optical spectra were analyzed with special attention paid to the direct optical bandgap. Atmospheric radio-frequency barrier torch discharge and pulsed hollow cathode sputtering techniques for the film fabrication were used. For the crystalline films, similar values of the direct optical bandgap were found independent of the growth method used. The analysis of the amorphous films and powders revealed a pronounced Urbach-like exponential absorption tail approaching the bandedge. For the powders, the bandgap energies were larger than those for the crystalline and amorphous …