6533b7d9fe1ef96bd126c3e3
RESEARCH PRODUCT
Large area perovskite light-emitting diodes by gas-assisted crystallization:
Daniel TorderaFrancesco Di GiacomoRobert AbbelVittal PrakasamGerwin H. GelinckHenk J. BolinkArjan Langensubject
Materials scienceFabricationBand gapSlot-die coatings02 engineering and technologySubstrate (electronics)Large area devicesengineering.material010402 general chemistry01 natural sciencesLuminancelaw.inventionCoatinglawQuenchingMaterials ChemistryMaterialsDiodePerovskite (structure)Industrial Innovationbusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologyPerovskite light emitting diodes0104 chemical sciencesLuminanceManufacturing techniquesHalide perovskitesengineeringOptoelectronics0210 nano-technologybusinessLight-emitting diodedescription
Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 devices of each 4.46 cm 2 per substrate) with three slot-die coated layers exhibit uniform emission with a peak luminance of 550 cd m −2 and a current efficiency of 2.6 cd A −1 . The reasons for the reduced performance and improvement routes are discussed. These results mark a vital step towards scalable manufacturing techniques for PeLEDs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-02-25 |