Search results for "BAND"
showing 10 items of 2610 documents
Self-assembled three-dimensional inverted photonic crystals on a photonic chip
2017
Three dimensional photonic crystals (PhCs) exhibiting a full photonic band gap have high potential in optical signal processing and detector applications. However, the challenges in the integration of the 3D PhCs into photonic circuits have so far hindered their exploitation in real devices. This article demonstrates the fabrication of 3D PhCs exploiting the capillary directed self-assembly (CDSA) of monodisperse colloidal silica spheres, their inversion to silicon shells, and integration with silicon waveguides. The measured transmission characteristics agree with numerical predictions and provide strong indication of a full photonic band gap in the inverted 3D photonic crystals at wavelen…
Light-Induced Sublimation of Cadmium Sulphide
1984
It has recently been shown that single crystal CdS, illuminated by light whose photon energy exceeds the bandgap, can eject particles from its surface while the temperature is well below the value required for vacuum sublimation. This phenomenon has obvious applications to the fabrication of surface structures as well as to the production of thin films that can show good CdS stoichiometry. This work will present several data on the morphology of the etched surface and its dependance on crystal orientation; results of an analysis of the recondensed thin film phase from the ejected material will also be shown. Emphasis will be devoted to examples of high resolution surface structures fabricat…
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
2004
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
Printing ZnO Inks: From Principles to Devices
2020
Solution-based printing approaches permit digital designs to be converted into physical objects by depositing materials in a layer-by-layer additive fashion from microscale to nanoscale resolution. The extraordinary adaptability of this technology to different inks and substrates has received substantial interest in the recent literature. In such a context, this review specifically focuses on the realization of inks for the deposition of ZnO, a well-known wide bandgap semiconductor inorganic material showing an impressive number of applications in electronic, optoelectronic, and piezoelectric devices. Herein, we present an updated review of the latest advancements on the ink formulations an…
Correlation in Heusler compounds YSi(Y=3d transition metal)
2007
Abstract Ferromagnetic Co 2 -based Heusler compounds have generated increasing interest over the last few years because of their peculiar electronic structure. They exhibit a band gap for the electrons of one direction and are metallic for the other. Further, they cover a very wide range of magnetic moments and Curie temperatures. Despite lot of efforts in theory and experiment to describe bulk materials and thin films, there are some marked discrepancies between observed and predicted properties of these materials. These discrepancies appear not only across but also within synthesis methods as well as in the theoretical predictions. In this contribution, the electronic structure of Co 2 YS…
Asymmetric Dual-Grating Micro-Slit Configuration for Broadband Solid State Coherent Detection of THz Pulses
2016
We demonstrated solid-state broadband coherent Terahertz characterization based on the Terahertz Field Induced Second Harmonic effect in Silica. The THz detector consists of an asymmetric micro-slit array which can be operated at 200V applied bias.
Mechanical Coupling in Gold Nanoparticles Supermolecules Revealed by Plasmon-Enhanced Ultralow Frequency Raman Spectroscopy
2016
International audience; Acoustic vibrations of assemblies of gold nanoparticles were investigated using ultralow frequency micro-Raman scattering and finite element simulations. When exciting the assemblies resonantly with the surface plasmon resonance of electromagnetically coupled nano-particles, Raman spectra present an ultralow frequency band whose frequency lies below the lowest Raman active Lamb mode of single nanoparticles that was observed. This feature was ascribed to a Raman vibration mode of gold nanoparticle " supermolecules " , that is, nanoparticles mechanically coupled by surrounding polymer molecules. Its measured frequency is inversely proportional to the nanoparticle diame…
Meniscus coated high open-circuit voltage bi-layer solar cells
2012
Neat bi-layer solar cells of a fullerene acceptor and a cyanine dye donor were prepared using meniscus coating. Meniscus coating is very material efficient and leads to high quality pinhole-free films. The cells exhibit high open circuit voltages of 1 volt, only 0.8 eV below the band gap of the cyanine dye. This is one of the smallest differences reported for organic solar cells and illustrates an almost optimal donor-acceptor energy level alignment.
Ultra-broad spectral photo-response in FePS3 air-stable devices
2021
Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS devices as a function of the excitation energy confirms a …
Topological insulators and thermoelectric materials
2012
Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and the…