Search results for "BEAM"
showing 10 items of 2126 documents
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
2019
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…
2020
Recent experiments have demonstrated the formation of free-standing Au monolayers by exposing the Au–Ag alloy to electron beam irradiation. Inspired by this discovery, we used semi-empirical effective medium theory simulations to investigate monolayer formation in 30 different binary metal alloys composed of late d-series metals such as Ni, Cu, Pd, Ag, Pt, and Au. In qualitative agreement with the experiment, we find that the beam energy required to dealloy Ag atoms from the Au–Ag alloy is smaller than the energy required to break the dealloyed Au monolayer. Our simulations suggest that a similar method could also be used to form Au monolayers from the Au–Cu alloy and Pt monolayers from Pt–…
Experimental evidence on photo-assisted O− ion production from Al2O3 cathode in cesium sputter negative ion source
2020
The production of negative ions in cesium sputter ion sources is generally considered to be a pure surface process. It has been recently proposed that ion pair production could explain the higher-than-expected beam currents extracted from these ion sources, therefore opening the door for laser-assisted enhancement of the negative ion yield. We have tested this hypothesis by measuring the effect of various pulsed diode lasers on the O − beam current produced from Al 2O 3 cathode of a cesium sputter ion source. It is expected that the ion pair production of O − requires populating the 5d electronic states of neutral cesium, thus implying that the process should be provoked only with specific …
Operating a cesium sputter source in a pulsed mode
2020
A scheme is presented for pulsing of a cesium sputter negative ion source by periodically switching on and off the high voltage driving the sputtering process. We demonstrate how the pulsed ion beam can be used in combination with a pulsed laser (6 ns pulse length) that has a 10 Hz repetition rate to study the photodetachment process, where a negative ion is neutralized due to the absorption of a photon. In such experiments, where the ion beam is used only for a small fraction of the time, we show that the pulsed mode operation can increase the lifetime of a cathode by two orders of magnitude as compared with DC operation. We also investigate how the peak ion current compares with the ion c…
A new 18 GHz room temperature electron cyclotron resonance ion source for highly charged ion beams
2020
An innovative 18 GHz HIISI (Heavy Ion Ion Source Injector) room temperature Electron Cyclotron Resonance (ECR) ion source (ECRIS) has been designed and constructed at the Department of Physics, University of Jyväskylä (JYFL), for the nuclear physics program of the JYFL Accelerator Laboratory. The primary objective of HIISI is to increase the intensities of medium charge states (M/Q ≅ 5) by a factor of 10 in comparison with the JYFL 14 GHz ECRIS and to increase the maximum usable xenon charge state from 35+ to 44+ to serve the space electronics irradiation testing program. HIISI is equipped with a refrigerated permanent magnet hexapole and a noncylindrical plasma chamber to achieve very stro…
The effect of plasma instabilities on the background impurities in charge breeder ECRIS
2017
International audience; Experimental observations of plasma instabilities in the 14.5 GHz PHOENIX charge breeder ECRIS are summarized. It has been found that the injection of 133Cs+ or 85Rb+ into oxygen discharge of the CB-ECRIS can trigger electron cyclotron instabilities, which results to sputtering of the surfaces exposed to the plasma, followed by up to an order of magnitude increase of impurity currents in the extracted n+ charge state distribution. The transition from stable to unstable plasma regime is caused by gradual accumulation and ionization of Cs/Rb altering the discharge parameters in 10 - 100 ms time scale, not by a prompt interaction between the incident ion beam and the EC…
Vapor plume and melted zone behavior during dissimilar laser welding of titanium to aluminum alloy
2020
The present study deals with continuous Yb:YAG laser welding of pure titanium to aluminum alloy A5754 performed with different beam offsets to the joint line. Spectroscopic and morphological characterization of vapor plume exiting the keyhole was combined with post-mortem observation and energy-dispersive X-ray spectroscopy (EDX) analysis of the welds. The laser beam centered on the joint line resulted in periodic transversal inclination of a vapor jet on the aluminum side associated with a local increase of melt width and an intense spatter formation. Such behavior can be attributed to the instability of the keyhole wall from the aluminum side. The beam offset on the titanium side led to …
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
A new Collinear Apparatus for Laser Spectroscopy and Applied Science (COALA).
2020
We present a new collinear laser spectroscopy setup that has been designed to overcome systematic uncertainty limits arising from high-voltage and frequency measurements, beam superposition, and collisions with residual gas that are present in other installations utilizing this technique. The applied methods and experimental realizations are described, including an active stabilization of the ion-source potential, new types of ion sources that have not been used for collinear laser spectroscopy so far, dedicated installations for pump-and-probe measurements, and a versatile laser system referenced to a frequency comb. The advanced setup enables us to routinely determine transition frequenci…