Search results for "BS"

showing 10 items of 20952 documents

Dynamic Consensus: Increasing Blockchain Adaptability to Enterprise Applications

2020

Decentralization powered by blockchain is validated for its capability to build trust like no other computational system before. The evolution of blockchain models has opened new use-cases that are becoming operational in many industry fields such as: energy, healthcare, banking, cross-border trade, aerospace, supply chain, and others. The core component of a decentralized architecture is the consensus algorithm - the set of rules that ensures an automated and fair agreement between the actors in the same network. Classic consensus algorithms are tailored to solve specific problems, but in an open ecosystem, each business case is unique and needs a certain level of customization. This paper…

010302 applied physicsComputer sciencebusiness.industrymedia_common.quotation_subjectSupply chainDistributed computing02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesDecentralised systemAdaptabilityPersonalizationSet (abstract data type)0103 physical sciencesBusiness caseArchitecture0210 nano-technologyAerospacebusinessmedia_common
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Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure

2017

The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzit…

010302 applied physicsCondensed Matter - Materials ScienceMaterials sciencePhotoluminescenceBand gapAnalytical chemistryWide-bandgap semiconductorGeneral Physics and AstronomyMineralogyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesNanocrystalline materialPhase (matter)0103 physical sciencesAbsorption (chemistry)Thin film0210 nano-technologyWurtzite crystal structure
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Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures

2020

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temp…

010302 applied physicsCondensed Matter - Materials ScienceMaterials sciencebusiness.industryBand gapGeneral Physics and AstronomyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technologySubstrate (electronics)021001 nanoscience & nanotechnology01 natural sciencesAmorphous solidsymbols.namesakeSputteringEllipsometry0103 physical sciencessymbolsOptoelectronicsFourier transform infrared spectroscopyThin film0210 nano-technologybusinessRaman spectroscopy
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Dielectric response of BaTiO3 electronic states under AC fields via microsecond time-resolved X-ray absorption spectroscopy

2021

Abstract For the first time, the dielectric response of a BaTiO 3 thin film under an AC electric field is investigated using microsecond time-resolved X-ray absorption spectroscopy at the Ti K-edge in order to clarify correlated contributions of each constituent atom on the electronic states. Intensities of the pre-edge e g peak and shoulder structure just below the main edge increase with an increase in the amplitude of the applied electric field, whereas that of the main peak decreases in an opposite manner. Based on the multiple scattering theory, the increase and decrease of the e g and main peaks are simulated for different Ti off-center displacements. Our results indicate that these s…

010302 applied physicsCondensed Matter - Materials ScienceX-ray absorption spectroscopyMaterials sciencePolymers and PlasticsAbsorption spectroscopyMetals and AlloysMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technologyElectronic structure021001 nanoscience & nanotechnology01 natural sciencesFerroelectricityMolecular physicsElectronic Optical and Magnetic MaterialsIonMicrosecondElectric field0103 physical sciencesAtomCeramics and Composites0210 nano-technologyActa Materialia
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Optical properties of GaSe, characterization and simulation

2021

Abstract The study focuses on structural and optical characterizations and properties of the GaSe lamellar material in one hand and on a numerical simulation of the photovoltaic properties of the ITO/GaSe heterojunction in a second hand. A few layers of GaSe were exfoliated from bulk GaSe on PET substrate. The optical transmission was recorded at room temperature. It shows that GaSe exhibits both indirect and direct band gaps of about 1.92 and 2.2 eV respectively. A value, as high as 104 cm−1, of the absorption coefficient was obtained. The corresponding refractive index has been determined numerically according to the Sellmeier and Cauchy models. The interesting value of absorption shows o…

010302 applied physicsCondensed Matter::Quantum GasesMaterials scienceComputer simulationbusiness.industryBand gapHeterojunction02 engineering and technologyÒptica021001 nanoscience & nanotechnology01 natural sciencesCharacterization (materials science)Attenuation coefficient0103 physical sciencesOptoelectronicsLamellar structure0210 nano-technologybusinessAbsorption (electromagnetic radiation)Refractive indexMaterials
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Thermal- and photo-induced spin crossover in the 1D coordination polymer [Fe(4-tBupy)3][Au(CN)2]2 (4-tBupy = 4-tert-butylpyridine)

2021

Reaction of the unidentate pyridine ligand containing a bulky t-butyl substituent with Fe2+ and [Au(CN)2]− affords a new type of spin crossover (SCO) coordination polymer in the 1D compound [Fe(4-tBupy)3][Au(CN)2]2⋅0.5H2O (1), which is formed by chains of Fe(II) complexes linked through bridging [Au(CN)2]− with three terminal 4-tBupy and one monodentate [Au(CN)2]− ligands completing the octahedral coordination around Fe(II). Longer reaction times led to the minor products [Fe(4-tBupy)2][Au(CN)2]2 (2), which presents a 2D structure more similar to that found in the other SCO compounds based on [Au(CN)2]−, and the 1D compound [Fe(4-tBupy)2(MeOH)][Au(CN)2]2 (3), in which one of the three termi…

010302 applied physicsDenticityCoordination polymerSpin transitionSubstituentGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciences3. Good healthchemistry.chemical_compoundCrystallographyOctahedronchemistrySpin crossoverExcited state0103 physical sciencesMoleculeFísica de l'estat sòlidCompostos de coordinació0210 nano-technologyMaterials
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Bandgap behavior and singularity of the domain-induced light scattering through the pressure-induced ferroelectric transition in relaxor ferroelectri…

2018

[EN] In this letter, we have investigated the electronic structure of A(x)Ba(1-x)Nb(2)O(6) relaxor ferroelectrics on the basis of optical absorption spectroscopy in unpoled single crystals with A = Sr and Ca under high pressure. The direct character of the fundamental transition could be established by fitting Urbach's rule to the photon energy dependence of the absorption edge yielding bandgaps of 3.44(1) eV and 3.57(1) eV for A = Sr and Ca, respectively. The light scattering by ferroelectric domains in the pre-edge spectral range has been studied as a function of composition and pressure. After confirming with x-ray diffraction the occurrence of the previously observed ferroelectric to pa…

010302 applied physicsDiffractionPhase transitionMaterials sciencePhysics and Astronomy (miscellaneous)Absorption spectroscopyCondensed matter physics02 engineering and technologyPhoton energy021001 nanoscience & nanotechnology01 natural sciencesFerroelectricityLight scatteringCRYSTALSTEMPERATURE-DEPENDENCEAbsorption edgeCALCIUM BARIUM NIOBATEFISICA APLICADA0103 physical sciencesDirect and indirect band gaps0210 nano-technologyCALCIUM BARIUM NIOBATE TEMPERATURE-DEPENDENCE CRYSTALS
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Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

2012

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrodinger equation for a cylindrical nanowire of infinite length, a…

010302 applied physicsElectron densityPhotoluminescenceMaterials scienceCondensed matter physicsNanowirePhysics::Optics02 engineering and technologyElectronCondensed Matter::Mesoscopic Systems and Quantum Hall Effect021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesCondensed Matter::Materials ScienceAbsorption edge0103 physical sciencesPhotoluminescence excitation0210 nano-technologyAbsorption (electromagnetic radiation)Surface statesphysica status solidi c
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Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions

2017

R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.

010302 applied physicsEnergy lossMaterials sciencePhysics::Instrumentation and DetectorsAtomic force microscopyAstrophysics::High Energy Astrophysical PhenomenaPhysics::Medical Physicsmacromolecular substances02 engineering and technologyGeneral ChemistryNanoindentation021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsIsotropic etchingElastic collisionIonPhysics::Plasma Physics0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Hardening (metallurgy)General Materials ScienceIrradiationAtomic physics0210 nano-technologyApplied Physics A
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Enabling partially reconfigurable IP cores parameterisation and integration using MARTE and IP-XACT

2012

International audience; This paper presents a framework which facilitates the parameterization and integration of IP cores into partially reconfigurable SoC platforms, departing from a high-level of abstraction. The approach is based in a Model-Driven Engineering (MDE) methodology, which exploits two widely used standards for Systems-on-Chip specification, MARTE and IP-XACT. The presented work deals with the deployment level of the MDE approach, in which the abstract components of the platform are first linked to the lower level IP-XACT counterparts. At this phase, information for parameterization and integration is readily available, and a synthesizable model can be obtained from the gener…

010302 applied physicsEngineeringExploitbusiness.industryEmphasis (telecommunications)02 engineering and technology01 natural sciences020202 computer hardware & architecture[INFO.INFO-ES] Computer Science [cs]/Embedded SystemsSoftware deploymentEmbedded systemIP-XACT0103 physical sciences0202 electrical engineering electronic engineering information engineeringSystem on a chip[INFO.INFO-ES]Computer Science [cs]/Embedded Systems[ INFO.INFO-ES ] Computer Science [cs]/Embedded SystemsbusinessField-programmable gate arrayAbstraction (linguistics)
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