Search results for "Band structure"
showing 10 items of 215 documents
Thickness dependence of anomalous Hall conductivity in L10-FePt thin film
2019
L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (from impurity scatterings). In the bulk limit of L10 ordered FePt films, the AHE is considered to be dominated by the intrinsic contribution, which mainly comes from the strong spin-orbit interaction (SOI) of Pt atoms and exchange-splitting of Fe atoms. The study of anomalous Hall conductivity (AHC) of L10-FePt thin films is of particular interest for its application in spintronic devices. In order to reduce the effects of defects such as grain boundaries, we chose SrTiO3 as the substrate which has a ver…
Low-frequency band gap in cross-like holey phononic crystal strip
2018
International audience; A silicon-based cross-like holey phononic crystal (PnC) strip is proposed for the control of elastic waves in the field of micro-electro-mechanical systems (MEMS). The goal is to obtain a broad bandgap at low frequencies with a lightweight structure. In this respect, the effects of varying the in-plane and the out-of-plane geometry parameters are discussed. After design, a gap-to-midgap ratio of 47% is obtained with an intermediate filling fraction of the solid material and a small thickness of the strip. The band gap can be moved to an extremely low frequency range while keeping the strip significantly smaller than previously reported PnC strips. The transmission pr…
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
1999
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…
Electronic Band Transitions in γ-Ge3N4
2021
This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Support from Estonian Research Council grant PUT PRG 619 is gratefully acknowledged. The multi-anvil experiments at LMV were supported by the French Government Laboratory of Excellence initiative no ANR-10-LABX-0006, the Région Auvergne and the European Regional Development Fund (ClerVolc Contribution Number 478).
Structural and electronic properties ofβ-FeSi2nanoparticles: The role of stacking fault domains
2014
We use conventional and aberration-corrected transmission electron microscopy (TEM) and ab initio calculations to investigate the structural and electronic properties of \ensuremath{\beta}-FeSi${}_{2}$ nanoparticles, which are a promising material for photovoltaic applications due to a band gap of 1 eV and a high absorption coefficient. The nanoparticles have average sizes of \ensuremath{\sim}20 nm, form aggregates, and are prepared by gas-phase synthesis. Amorphous SiO${}_{x}$ shells with thicknesses of \ensuremath{\sim}1.7 nm around \ensuremath{\beta}-FeSi${}_{2}$ cores are identified on individual nanoparticles using electron energy-loss spectroscopy, while stacking fault domains in the …
Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4
2021
Abstract This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption experiments (up to around 17 GPa) combined with first-principles electronic band-structure calculations provide compelling evidence of strong nonlinear pressure dependence of the bandgap in both compounds. The nonlinear pressure dependence is well accounted for by the band anticrossing model that was previously established mostly for selenides with defect chalcopyrite structure. Therefore, our results on two sulfides with defect chalcopyrite structure under compressio…
First-principles study of the electronic structure of cubicGaS: Metallic versus insulating polymorphs
2007
The electronic structure of different polymorphs of gallium sulphide $(\mathrm{GaS})$ with cubic structure is investigated by means of first-principles band structure calculations in connection with experimental reports on a metastable semiconducting cubic form of this material. The expected metallic character of simple cubic phases containing one $\mathrm{GaS}$ group per unit cell (rocksalt or zinc-blende) is confirmed by the calculations. A cubane-based zinc-blende structure is found to exhibit a band gap which is compatible with experimental results but the unit cell parameter is much larger than the reported ones. We have also studied cubic phases containing hydrogen. It is found that t…
Resonant Raman characterization of InAlGaN/GaN heterostructures
2006
InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer.…
Photonic band gaps in highly ionic medium: CuCl, CuBr, CuI
2003
Abstract Using the transfer-matrix-method, we have studied the propagation of electromagnetic waves through two-dimensional (2D) and three-dimensional (3D) dispersive photonic band gap (PBG) structures constructed from copper halides materials, especially from CuCl compounds. A special attention has been paid to the effect of the polariton gap on the PBG properties. This study reveals that “Twin gaps” and “Twin brothers” concepts and the flattened bands phenomena in both polarizations and for both structures (i.e. 2D and 3D) are all consequences of the strong photon–phonon coupling, particularly near the long wave length transverse optical phonon frequency. Furthermore, results for comparis…
Band convergence in the non-cubic chalcopyrite compounds Cu_2MGeSe_4
2014
Inspired by recent theoretical predictions on band convergence in the tetragonal chalcopyrite compounds, we have explored the influence of the crystal structure on the transport and bandstructure of different quaternary chalcopyrites. In theory, a changing lattice parameter ratio of c/2a towards unity should lead to band convergence due to a more cubic and higher symmetry structure. In accordance with this prediction, the different solid solutions explored in this manuscript show a significant impact on the electronic transport depending on the ratio of the lattice parameters. An increasing lattice parameter ratio results in an increase of the carrier effective masses which can be explained…