Search results for "Biasing"
showing 10 items of 69 documents
Experimental results from Al/p-CdTe/Pt X-ray detectors
2013
Abstract Recently, Al/CdTe/Pt detectors have been proposed for the development of high resolution X-ray spectrometers. Due to the low leakage currents, these detectors allow high electric fields and the pixellization of anodes with the possibility to realize single charge carrier sensing detectors. In this work, we report on the results of electrical and spectroscopic investigations on CdTe diode detectors with Al/CdTe/Pt electrode configuration (4.1×4.1×0.75 and 4.1×4.1×2 mm 3 ). The detectors are characterized by very low leakage currents in the reverse bias operation: 0.3 nA at 25 °C and 2.4 pA at −25 °C under a bias voltage of −1000 V. The spectroscopic performance of the detectors at b…
MuPix10: First Results from the Final Design
2021
Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{\mu m}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an inte…
Normal metal - insulator - superconductor interferometer
2003
Hybrid normal metal - insulator - superconductor microstructures suitable for studying an interference of electrons were fabricated. The structures consist of a superconducting loop connected to a normal metal electrode through a tunnel barrier . An optical interferometer with a beam splitter can be considered as a classical analogue for this system. All measurements were performed at temperatures well below 1 K. The interference can be observed as periodic oscillations of the tunnel current (voltage) through the junction at fixed bias voltage (current) as a function of a perpendicular magnetic field. The magnitude of the oscillations depends on the bias point. It reaches a maximum at energ…
High-resolution multichannel Time-to-Digital Converter core implemented in FPGA for ToF measurements in SiPM-PET
2013
In this contribution, Coincidence Resolving Time (CRT) results with the developed multichannel FPGA-TDC are showed as a function of different configurations for both, the sensor bias voltage and the digitizer threshold. The dependence of the CRT with the sensor matrix temperature, the amount of SiPM active area and the crystal type are also analyzed. Preliminary measurements carried out with a crystal array of 2 mm pixel size and 10 mm height have shown time resolutions for the entire 144 SiPM two-detectors ensemble as good as 800 ps.
Characterization of Al-Schottky CdTe detectors
2011
In the last decades, great efforts are being devoted to the development of CdTe detectors for high resolution X-ray and gamma ray spectroscopy. Recently, new rectifying contacts based on aluminum (Al) are very appealing in the development of CdTe detectors with low leakage currents and anode pixellization. In this work, we report on preliminary results of electrical and spectroscopic investigations on Schottky CdTe diode detectors (4.1 × 4.1 × 0.75 and 4.1 × 4.1 × 2 mm3) with Au/Ti/Al/CdTe/Pt electrode configuration. The detectors are characterized by very low leakage currents even at room temperature (26 pA at 25 °C under a bias voltage of −100 V for the 2 mm thick detector). Polarization …
Determination of thermometric parameters from the conductance curve of the normal metal based tunnel junction array
1997
Abstract We propose a method for extracting thermometric parameters from the measured conductance curve, against bias voltage, of a tunnel junction array. Instead of fitting the whole theoretical conductance curve to the experiment, we perform several polynomial fits to selected bias regions. The advantages of this method is that polynomial fits are linear in their fitting parameters whereas the theoretical form for the conductance is inherently nonlinear. This way the proposed method is about three orders of magnitude faster than the nonlinear fit. Optimizing this polynomial fit procedure is discussed.
Design of MOS Current Mode Logic Gates – Computing the Limits of Voltage Swing and Bias Current
2005
Minimizing a quality metric for an MCML gate, such as power-delay product or energy-delay product, requires solving a system of nonlinear equations subject to constraints on both bias current and voltage swing. In this paper, we will show that the limits of the swing and the bias current are affected by the constraints on maximum area and maximum delay. Moreover, methods for computing such limits are presented.
Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique
2016
In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a central electrode (2 x 2 mm(2)) surrounded by a guard ring electrode. The cathode is a planar electrode covering the detector surface (4.1 x 4.1 mm(2)). Current-voltage (I-V) characteristics were measured at different temperatures in order to study the charge transport and the electrical properties. These detectors were compared with the trav…
Influence of mobile ions on the electroluminescence characteristics of methylammonium lead iodide perovskite diodes
2016
In this work, we study the effect of voltage bias on the optoelectronic behavior of methylammonium lead iodide planar diodes. Upon biasing the diodes with a positive voltage, the turn-on voltage of the electroluminescence diminishes and its intensity substantially increases. This behavior is reminiscent of that observed in light-emitting electrochemical cells (LECs), single-layer electroluminescent devices in which the charge injection is assisted by the accumulation of ions at the electrode interface. Because of this mechanism, performances are largely independent from the work function of the electrodes. The similarities observed between planar perovskite diodes and LECs suggest that mobi…
Field-induced tip–sample oxygen transfer in scanning tunneling microscopy on TiO2(110) (1 1).
2008
International audience; A study on the field-induced tip–surface oxygen transfer at room temperature and its influence on the tunneling conditions for stable STM imaging of the TiO2(110) (1 1) surface is reported. A simple model of field-induced transfer is applied to tungsten and platinum–iridium tips. The oxygen transition rates from the sample to the tip or from the tip to the sample depend on the oxygen desorption barriers formed at tunneling distance. For stable imaging the applied bias voltage has to balance the oxygen transfer probabilities in both directions. In the case of Pt/Ir tips, the tunneling conditions for images with clear evidence of bridging oxygen point defects have been…