Search results for "Breakdown"
showing 10 items of 97 documents
High-Power Multicarrier Generation for RF Breakdown Testing
2017
Testing of satellite components for high RF power breakdown effects, such as multipactor and corona or passive-intermodulation, is a topic of growing interest in the aerospaceindustry. Switching fromthe classical single carrier approach to the more realisticmulticarrier scenario is very challenging from the experimental point of view. Themulticarrier signals, amplifiedby several RF power amplifiers, need to have controlled phase, amplitude, and frequency in each carrier. Fine tuning of the signal generator phases is required in order to compensate the phase drift occurring in the active elements of the test bed. This paper presents an efficient and low-cost technique to generate multicarrie…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
Radiation resistance of nanolayered silicon nitride capacitors
2020
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
Recent advances of the multipactor RF breakdown in RF satellite microwave passive devices
2016
The main goal of this work is the review of the recent advances in the study of the multipactor RF breakdown phenomenon in RF satellite microwave passive devices for space telecommunication applications developed in the Val Space Consortium. In this work several topics related with the multipactor phenomenon will be discussed.
Quantum-chemical determination of Born–Oppenheimer breakdown parameters for rotational constants: the open-shell species CN, CO+ and BO
2013
The quantum-chemical protocol for computing Born-Oppenheimer breakdown corrections to rotational constants in the case of diatomic molecules is extended to open-shell species. The deviation from the Born-Oppenheimer equilibrium rotational constant is obtained by considering three contributions: the adiabatic correction to the equilibrium bond distance, the electronic contribution to the moment of inertia requiring the computation of the rotational g-tensor, and the so-called Dunham correction. Values for the Born-Oppenheimer breakdown parameters of CN, CO+, and BO in their (2)sigma(+) electronic ground states are reported based on coupled-cluster calculations of the involved quantities and …
Properties of native ultrathin aluminium oxide tunnel barriers
2003
We have investigated planar metal–insulator–metal tunnel junctions with aluminium oxide as the dielectricum. These oxide barriers were grown on an aluminium electrode in pure oxygen at room temperature till saturation. By applying the Simmons model we derived discrete widths of the tunnelling barrier, separated by Δs ≈ 0.38 nm. This corresponds to the addition of single layers of oxygen atoms. The minimum thickness of s0 ≈ 0.54 nm is then due to a double layer of oxygen. We found a strong and systematic dependence of the barrier height on the barrier thickness. Breakdown fields up to 5 GV m−1 were reached. They decreased strongly with increasing barrier thickness. Electrical breakdown could…
Detection of fluorine using laser-induced breakdown spectroscopy and Raman spectroscopy
2017
In general, the detection of F and other halogens is challenging through conventional techniques. In this paper, various approaches for the qualitative and quantitative analysis of F using the laser-induced breakdown spectroscopy (LIBS) technique were demonstrated. In LIBS, fluorine detection can be realized by means of atomic lines and molecular bands. For the purposes of our experiment, two sets of pellets with various contents of CaF2, CaCO3 and cellulose were analyzed using a lab-based LIBS system under a He atmosphere. The fluorine atomic line at 685.60 nm was correlated with CaF signals proving their close relationship. Consequently, the limits of detection were determined for both an…
Laser-induced plasma spectroscopy in near vacuum ultraviolet using ordinary spectrograph and ICCD
2002
An experimental setup to measure laser-induced plasma emission spectra with an ordinary Czerny-Turner spectrograph and intensified charge-coupled device in the near vacuum ultraviolet down to 130 nm is described. Spectra of bromine, chlorine and iodine were recorded to demonstrate the performance of the setup.
Development of a chewing simulator for food breakdown and the analysis of in vitro flavor compound release in a mouth environment
2007
International audience; Flavor release during eating is highly dependent upon mouth parameters. Major limitations have been reported during in vivo flavor release studies, such as marked intra- and inter-individual variability. To overcome these limitations, a chewing simulator has been developed to mimic the human mastication of food samples. Several devices had already been developed for diverse applications, but they only reproduced certain oral functions and were therefore not characteristic of the natural mouth environment. The newly developed device faithfully reproduces most of the functions of the human mouth. The active part of the system is a special cell, precisely tooled using a…