Search results for "Breakdown"
showing 10 items of 97 documents
Analysis of multipactor RF breakdown in a waveguide containing a transversely magnetized ferrite
2016
In this paper, the multipactor RF breakdown in a parallel-plate waveguide partially filled with a ferrite slab magnetized normal to the metallic plates is studied. An external magnetic field is applied along the vertical direction between the plates in order to magnetize the ferrite. Numerical simulations using an in-house 3-D code are carried out to obtain the multipactor RF voltage threshold in this kind of structures. The presented results show that the multipactor RF voltage threshold at certain frequencies becomes considerably lower than for the corresponding classical metallic parallel-plate waveguide with the same vacuum gap
Characterization of SiPM properties at liquid nitrogen temperature
2016
SiPM operation at cryogenic temperatures fails for many common devices. A particular type with deep channels in the silicon substrate instead of quenching resistors was thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating it with low light levels. The devices were mounted in vacuum with the temperature stabilized to allow long-term operation. SiPM signals from a LED pulser were acquired with single-pixel resolution. Generalized fits to the charge collection spectra were used to extract properties like single-pixel gain, inter-pixel variation, breakdown voltage, and photon detection efficiency. With these measurements a deeper investigation of th…
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
A review of the development of portable laser induced breakdown spectroscopy and its applications
2014
Abstract In this review, we present person-transportable laser induced breakdown spectroscopy (LIBS) devices that have previously been developed and reported in the literature as well as their applications. They are compared with X-ray fluorescent (XRF) devices, which represent their strongest competition. Although LIBS devices have advantages over XRF devices, such as sensitivity to the light elements, high spatial resolution and the possibility to distinguish between different layers of the sample, there are also disadvantages and both are discussed here. Furthermore, the essential portable LIBS instrumentation (laser, spectrograph and detector) is presented, and published results related…
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
2018
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving the…
Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs
1999
In this paper is presented an experimental investigation on the origin of the substrate current after soft-breakdown in n-MOSFETs with 4.5 nm-thick oxide. At lower voltages this current shows a plateau that can be explained with the generation of hole-electron pairs in the space charge region and at the Si-SiO2 interface, and to carrier diffusion between the channel and the substrate. At higher voltages the substrate current steeply increases with voltage, due to trap-assisted tunneling from the substrate valence band to the gate conduction band, which becomes possible for gate voltages higher than the threshold voltage. Measurements on several devices at dark and in the presence of light, …
A compact and portable laser-induced breakdown spectroscopy instrument for single and double pulse applications
2008
Abstract We present LIBS experimental results that demonstrate the use of a newly developed, compact, versatile pulsed laser source in material analysis related to art and archaeological applications in view of research aiming at the development of portable LIBS instrumentation. LIBS qualitative analysis measurements were performed on various samples and objects, and the spectra were recorded in gated and non-gated modes. The latter is important because of advantages arising from size and cost reduction when using simple, compact spectrograph-CCD detection systems over the standard ICCD-based configurations. The new laser source exhibited a very reliable performance in terms of laser pulse …
Metal frame as local protection of superconducting films from thermomagnetic avalanches
2016
Thermomagnetic avalanches in superconducting films propagating extremely fast while forming unpredictable patterns, represent a serious threat for the performance of devices based on such materials. It is shown here that a normal-metal frame surrounding a selected region inside the film area can provide efficient protection from the avalanches during their propagation stage. Protective behavior is confirmed by magneto-optical imaging experiments on NbN films equipped with Cu and Al frames, and also by performing numerical simulations. Experimentally, it is found that while conventional flux creep is not affected by the frames, the dendritic avalanches are partially or fully screened by them…
Predictive dead time controller for GaN-based boost converters
2017
A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…
Singular value decomposition approach to the yttrium occurrence in mineral maps of rare earth element ores using laser-induced breakdown spectroscopy
2017
Laser-induced breakdown spectroscopy (LIBS) has been used in analysis of rare earth element (REE) ores from the geological formation of Norra Kärr Alkaline Complex in southern Sweden. Yttrium has been detected in eudialyte (Na15 Ca6(Fe,Mn)3 Zr3Si(Si25O73)(O,OH,H2O)3 (OH,Cl)2) and catapleiite (Ca/Na2ZrSi3O9·2H2O). Singular value decomposition (SVD) has been employed in classification of the minerals in the rock samples and maps representing the mineralogy in the sampled area have been constructed. Based on the SVD classification the percentage of the yttrium-bearing ore minerals can be calculated even in fine-grained rock samples. peerReviewed