Search results for "CMO"
showing 10 items of 145 documents
CMOS plasmonics in WDM data transmission: 200 Gb/s (8 × 25Gb/s) transmission over aluminum plasmonic waveguides
2018
We demonstrate wavelength-division-multiplexed (WDM) 200 Gb/s (8 × 25 Gb/s) data transmission over 100 μm long aluminum (Al) surface-plasmon-polariton (SPP) waveguides on a Si3N4 waveguide platform at telecom wavelengths. The Al SPP waveguide was evaluated in terms of signal integrity by performing bit-error-rate (BER) measurements that revealed error-free operation for all eight 25 Gb/s non-return-to-zero (NRZ) modulated data channels with power penalties not exceeding 0.2 dB at 10−9. To the best of our knowledge, this is the first demonstration of WDM enabled data transmission over complementary-metal-oxide-semiconductor (CMOS) SPP waveguides fueling future development of CMOS compatible …
Feedback Biasing Based Adjustable Gain Ultrasound Preamplifier for CMUTs in 45nm CMOS
2018
As CMOS technology is scaled down, supply voltages are decreasing and intrinsic gain of the nanoscale CMOS transistors is dropping while the threshold voltages of transistors are remaining relatively constant. In such scaled down nanoscale CMOS technologies, conventional vertical stacking architectures (for example. cascode architectures) for high-gain becomes no more attractive. In this paper we present the analysis and design of a feedback biasing based adjustable gain ultrasound preamplifier which is capable of amplifying signals from 15 MHz to 45 MHz from Capacitive Micromachined Ultrasound Transducers (CMUTs) in 45nm CMOS technology for medical ultrasound imaging applications. From the…
B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible
2009
The integration of metal oxide gas sensing layers into CMOS electronic still a challenge especially due to the high operating temperatures that do not comply with silicon transistor limits , even more critical, and metal oxide annealing temperatures. External electric fields will allow control over the energy levels of the sensing layer and thus over adsorption sensitivity, consequently the interaction between gas and sensitive layer is modulated. As the absorbed gas on the surface produces a band bending, it changes conduction paths allowing gas detection through resistance measurements. With this configuration, field switch offers fast desorption and thus handling of low temperature respo…
Gamma-ray irradiation tests of CMOS sensors used in imaging techniques
2014
Technologically-enhanced electronic image sensors are used in various fields as diagnostic techniques in medicine or space applications. In the latter case the devices can be exposed to intense radiation fluxes over time which may impair the functioning of the same equipment. In this paper we report the results of gamma-ray irradiation tests on CMOS image sensors simulating the space radiation over a long time period. Gamma-ray irradiation tests were car ried out by means of IGS-3 gamma irradiation facility of Palermo Uni ver sity, based on 60Co sources with dif fer ent ac tiv i ties. To re duce the dose rate and re al ize a nar row gamma-ray beam, a lead-collimation sys tem was pur posely …
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
2015
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…
Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology
2014
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…
Selective Change Driven Imaging: A Biomimetic Visual Sensing Strategy
2011
Selective Change Driven (SCD) Vision is a biologically inspired strategy for acquiring, transmitting and processing images that significantly speeds up image sensing. SCD vision is based on a new CMOS image sensor which delivers, ordered by the absolute magnitude of its change, the pixels that have changed after the last time they were read out. Moreover, the traditional full frame processing hardware and programming methodology has to be changed, as a part of this biomimetic approach, to a new processing paradigm based on pixel processing in a data flow manner, instead of full frame image processing.
A device for multimodal imaging of skin
2013
A compact prototype device for diagnostic imaging of skin has been developed and tested. Polarized LED light at several spectral regions is used for illumination, and round skin spot of diameter 30mm is imaged by a CMOS sensor via crossoriented polarizing filter. Four consecutive imaging series are performed: (1) RGB image at white LED illumination for revealing subcutaneous structures; (2) four spectral images at narrowband LED illumination (450nm, 540nm, 660nm, 940nm) for mapping of the main skin chromophores; (3) video-imaging under green LED illumination for mapping of skin blood perfusion; (4) autofluorescence video-imaging under UV (365nm) LED irradiation for mapping of the skin fluor…
Memory cell structure integrated on semiconductor
2004
This invention relates to a memory cell Which comprises a capacitor having a ?rst electrode and a second electrode separated by a dielectric layer. Such dielectric layer com prises a layer of a semi-insulating material Which is fully enveloped by an insulating material and in Which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the ?rst or to the second electrode, depending on the electric ?eld betWeen the electrodes,therebyde?ningdifferentlogiclevels.
Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics
2020
Here we provide a perspective concept of neurohybrid memristive chip based on the combination of living neural networks cultivated in microfluidic/microelectrode system, metal-oxide memristive devices or arrays integrated with mixed-signal CMOS layer to control the analog memristive circuits, process the decoded information, and arrange a feedback stimulation of biological culture as parts of a bidirectional neurointerface. Our main focus is on the state-of-the-art approaches for cultivation and spatial ordering of the network of dissociated hippocampal neuron cells, fabrication of a large-scale cross-bar array of memristive devices tailored using device engineering, resistive state program…