Search results for "CMOS"

A Design Methodology for Low-Power MCML Ring Oscillators

2007

In this paper, a low-power design method for MCML based ring oscillators is presented. The proposed method takes into account the parasitic capacitances of the MOS transistors. To validate it, some ring oscillators with different oscillation frequencies were designed in a 0.18 mum CMOS technology. SPICE simulations demonstrate the effectiveness of the design method.

Low Dose-Rate, High Total Dose Set-Up for Rad-Hard CMOS I/O Circuits Testing

2017

In this paper, the planning of low dose-rate, high total dose testing campaign for I/O circuits is reported. In particular, the paper describes all development steps, starting from the rad-hard I/O circuits design and the implementation of the test-chip, which is meant to allow comparative testing between rad-hard and standard devices. The designed experimental setup permits in situ measurements, therefore the circuits behavior can be remotely monitored for very long periods. This feature enables low dose-rate testing up to very high dose.

Gamma-ray irradiation tests on CCD and CMOS sensors used in imaging techniques

2012

Technologically-enhanced electronic devices are used in various fields as space imaging or diagnostic techniques in medicine. The devices can be exposed to intense radiation fluxes over time which may impair the functioning of the same apparatus, in particular in space applications. In this paper we report the results of a gamma irradiation tests on imaging sensors simulating the space radiation over a long time period. Two types of sensors are taken into consideration: CCD (Charge-Coupled Device) sensors and CMOS based on technology MOS (Metal Oxide semiconductor) used for the realization of transistors widely used in consumer electronics. The devices are supplied by Techno System (Italy),…

Ultra-sensitive refractive index sensor using CMOS plasmonic transducers on silicon photonic interferometric platform

2020

Optical refractive-index sensors exploiting selective co-integration of plasmonics with silicon photonics has emerged as an attractive technology for biosensing applications that can unleash unprecedented performance breakthroughs that reaps the benefits of both technologies. However, towards this direction, a major challenge remains their integration using exclusively CMOS-compatible materials. In this context, herein, we demonstrate, for the first time to our knowledge, a CMOS-compatible plasmo-photonic Mach-Zehnder-interferometer (MZI) based on aluminum and Si3N4 waveguides, exhibiting record-high bulk sensitivity of 4764 nm/RIU with clear potential to scale up the bulk sensitivity value…

Integration of GMR sensors with different technologies

2016

Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the …

Ultimate Order Statistics-Based Prototype Reduction Schemes

2013

Published version of a chapter in the book: AI 2013: Advances in Artificial Intelligence. Also available from the publisher at: http://dx.doi.org/10.1007/978-3-319-03680-9_42 The objective of Prototype Reduction Schemes (PRSs) and Border Identification (BI) algorithms is to reduce the number of training vectors, while simultaneously attempting to guarantee that the classifier built on the reduced design set performs as well, or nearly as well, as the classifier built on the original design set. In this paper, we shall push the limit on the field of PRSs to see if we can obtain a classification accuracy comparable to the optimal, by condensing the information in the data set into a single tr…

Performance of the ATLASPix1 pixel sensor prototype in ams aH18 CMOS technology for the ATLAS ITk upgrade

2019

Realistic model of compact VLSI FitzHugh–Nagumo oscillators

2013

In this article, we present a compact analogue VLSI implementation of the FitzHugh–Nagumo neuron model, intended to model large-scale, biologically plausible, oscillator networks. As the model requires a series resistor and a parallel capacitor with the inductor, which is the most complex part of the design, it is possible to greatly simplify the active inductor implementation compared to other implementations of this device as typically found in filters by allowing appreciable, but well modelled, nonidealities. We model and obtain the parameters of the inductor nonideal model as an inductance in series with a parasitic resistor and a second order low-pass filter with a large cut-off freque…

A VLSI for deskewing and fault tolerance in LVDS links

2005

The device presented at this work is a switch implemented in a 0.35 mum CMOS process for compensating the skew which affects parallel data signal transmissions and for providing fault tolerance in large scale scalable systems, for instance used in trigger farms for high energy physics experiments. The SWIFT chip (SWItch for Fault Tolerance) is part of a cluster built around commercially components which has been inspired by the LHCb experiment. The skew is extremely important because it directly affects the sample window available to the receiver logic and either forces to use quality and expensive cables in order to minimize its effects or reduces the maximum signal transmission range or d…

The IXO Wide-Field Imager

2010

The Wide Field Imager (WFI) of the International X-ray Observatory (IXO) is an X-ray imaging spectrometer based on a large monolithic DePFET (Depleted P-channel Field Effect Transistor) Active Pixel Sensor. Filling an area of 10 × 10 cm² with a format of 1024 × 1024 pixels it will cover a field of view of 18 arcmin. The pixel size of 100 × 100 μm² corresponds to a fivefold oversampling of the telescope's expected 5 arcsec point spread function. The WFI's basic DePFET structure combines the functionalities of sensor and integrated amplifier with nearly Fano-limited energy resolution and high efficiency from 100 eV to 15 keV. The development of dedicated control and amplifier ASICs allows for…