Search results for "CONDUCTIVITY"
showing 10 items of 1988 documents
Electron–phonon interaction in a thin Al–Mn film
2006
Abstract Aluminum doped with manganese is an interesting novel material with applications in normal metal–insulator–superconductor (NIS) tunnel junction devices and transition-edge sensors at sub-Kelvin temperatures. We have studied the electron–phonon (e–p) coupling in a thin aluminum film doped with 1% manganese, with a measuring technique based on DC hot-electron effect. The electron temperature was measured with the help of symmetric normal metal–insulator–superconductor tunnel-junction pairs (SINIS-thermometers). Measurements show that the temperature dependence of the e–p interaction is not consistent with existing theories for disordered metals, but follows a higher power law.
Charmed baryon strong coupling constants in a light-front quark model
1998
Light-Front quark model spin wave functions are employed to calculate the three independent couplings g_{\Sigma_c \Lambda_c \pi}, f_{\Lambda_{c1} \Sigma_c \pi} and f_{\Lambda^{*}_{c1} \Sigma_c \pi} of S-wave to S-wave and P-wave to S-wave one-pion transitions. It is found that g_{\Sigma_c \Lambda_c \pi}=6.81 MeV^{-1}, f_{\Lambda_{c1} \Sigma_c \pi}=1.16 and f_{\Lambda^{*}_{c1} \Sigma_c \pi}=0.96 . 10^{-4} MeV^{-2}. We also predict decay rates for specific strong transitions of charmed baryons.
Baryon states with open charm in the extended local hidden gauge approach
2014
In this paper we examine the interaction of $D N$ and $D^* N$ states, together with their coupled channels, by using an extension of the local hidden gauge formalism from the light meson sector, which is based on heavy quark spin symmetry. The scheme is based on the use of the impulse approximation at the quark level, with the heavy quarks acting as spectators, which occurs for the dominant terms where there is the exchange of a light meson. The pion exchange and the Weinberg-Tomozawa interactions are generalized and with this dynamics we look for states generated from the interaction, with a unitary coupled channels approach that mixes the pseudoscalar-baryon and vector-baryon states. We f…
Optical investigations of TlBr detector crystals
2004
Shift of fundamental absorption edge, the position of main luminescence bands, the luminescence decay and transient absorption spectra in three TlBr crystals were studied. The γ-quanta detector made from TlBr crystals with similar transient absorption and luminescence parameters shows similar detector properties. The iodine impurity in TlBr was detected by optical methods. The role of impurities and crystal defects in γ-quanta detectors manufactured is discussed.
Effects of orbital occupation on 0νββ nuclear matrix element
2009
We have used the recently measured neutron occupancies in the 76 Ge and 76 Se nuclei as a guideline to define the neutron quasiparticle states in the 1p0f0g shell. The adjacent odd-mass nuclei help define the corresponding proton quasiparticle states. We insert the obtained quasiparticles in a proton-neutron quasiparticle random-phase approximation (pnQRPA) calculation of the nuclear matrix element of the neutrinoless double beta (0 νββ ) decay of 76 Ge. It is found that the resulting value of the 0 νββ matrix element is not far from the recently reported shell-model result.
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
Particle detectors made of high-resistivity Czochralski silicon
2005
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…
POLARIZED ELECTRONS AND POSITRONS AT THE MESA ACCELERATOR
2011
We suggest starting an accelerator physics project called the Mainz Energyrecovering Superconducting Accelerator (MESA) as an extension to the experimental facilities at the institute for nuclear physics. MESA may allow us to introduce an innovative internal target regime based on the ERL principle. A second mode of operation will be to use an external polarized electron beam for parity violating experiments. Furthermore, MESA could also allow us to establish a CW source of polarized positrons.
Quantum transport of non-interacting Fermi gas in an optical lattice combined with harmonic trapping
2004
We consider a non-interacting Fermi gas in a combined harmonic and periodic potential. We calculate the energy spectrum and simulate the motion of the gas after sudden replacement of the trap center. For different parameter regimes, the system presents dipole oscillations, damped oscillations around the replaced center, and localization. The behaviour is explained by the change of the energy spectrum from linear to quadratic.
Small-polaron transport inLa0.67Ca0.33MnO3thin films
1998
We present a detailed study of the activated resistivity of ${\mathrm{La}}_{0.67}{\mathrm{Ca}}_{0.33}{\mathrm{MnO}}_{3}$ films up to 600 K under the influence of high magnetic fields. Data in zero field can be explained by small polaron hopping as treated in the Friedman-Holstein theory. Based on the spin orientation of ferromagnetic clusters in a magnetic field, we develop a phenomenological model describing the temperature and field dependence of the resistivity with a minimum of free parameters. We find that the polarons have a magnetic contribution to their activation energy for hopping which depends on the variation of the spin order with increasing temperature and can be modified by a…