Search results for "CONDUCTIVITY"
showing 10 items of 1988 documents
Kinetic Parameters for Thermal Degradation of Green Asparagus Texture by Unsteady-state Method
1998
An unsteady-state method was developed for estimating texture degradation during heating-cooling of green asparagus spears. The method used a mathematical model of heat transmission for time-temperature history estimation, and a nonlinear regression of texture measurements of asparagus spears to estimate kinetic parameters. The specific heat, conductivity and convective coefficient of green asparagus were determined experimentally and used In the mathematical model for temperature estimation. Values obtained were Ea = 76.19±0.13 kJ/mol and k 1158°C = 0.00528±0.00005 s -1 . Good agreement was found between predicted and observed texture values. The method was compared with the classical stea…
<br /> Ga_2O_3 films alloyed with SnO_2 and treated by RF plasma: an interesting way for the development of transparent contacts for UV-emittin…
2016
International audience; Layers of Ga2O3 alloyed up to 15 at% with Sn4+ has been studied after treatment by RF plasma. An increased conductivity was measured which is an interesting step towards transparent contacts for UV-emitting photonics devices.
Deposition and characterization of ZnO thin films on GaAs and Pt/GaAs substrates
2020
Abstract This work reports the deposition and characterization of piezoelectric ZnO thin films on semi-insulating GaAs substrates for the fabrication of bulk acoustic waves sensors. ZnO films are deposited at 350 °C and low deposition rate using reactive radio frequency magnetron sputtering. The use of a Pt bottom electrode, between ZnO and GaAs, with and without Ti buffer layer, as well as the effect of the substrate crystallographic orientation are investigated. The characterization of the deposited films is performed to determine the optimal parameters for obtaining high-quality films and ZnO residual conductivity. ZnO films are textured along the c-axis for all GaAs cuts. The highest st…
Laser Beam Induced Current measurements on Dye Sensitized Solar Cells and thin film CIG(S,SE)<inf>2</inf> modules
2017
Calculating the efficiency of a solar cell depends on a precise knowledge of its area. Indeed, the photoresponse uniformity is essential to improve the manufacturing process. In this work we report on Laser Beam Induced Current measurements performed on CIG(S,Se) 2 modules and Dye Sensitized Solar Cells. These measurements, performed via a green and a red HeNe lasers both operating at an optical irradiance of 1 Sun, allowed to obtain an accurate photoresponse map of the specimens and highlighted the non-uniformities with a spatial resolution of 400 µm and 80 µm, respectively.
In situ monitoring of pulsed laser indium–tin-oxide film deposition by optical emission spectroscopy
2001
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pres…
Energy structure and electro-optical properties of organic layers with carbazole derivative
2014
Abstract Phosphorescent organic light emitting diodes are perspective in lighting technologies due to high efficient electroluminescence. Not only phosphorescent dyes but also host materials are important aspect to be considered in the devices where they are a problem for blue light emitting phosphorescent molecules. Carbazole derivative 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole (TCz1) is a good candidate and has shown excellent results in thermally evaporated films. This paper presents the studies of electrical properties and energy structure in thin films of spin-coated TCz1 and thermally evaporated tris[2-(2,4-difluorophenyl)pyridine]iridium(III) (Ir(Fppy)3). The 0.46 eV difference …
Energy structure of thin films of carbazole derivatives with metal electrodes
2011
Study of charge carrier transport in organic electroluminescent devices, organic photovoltaic devices, and organic field-effect transistors is one of the most important points. In order to realize comparable electron and hole transport in thin organic films with electrodes the energy structure of such devices are of great importance. In this work, we have studied electrical properties and energy structure of two carbazole derivatives. The threshold energy of photoconductivity quantum efficiency is 2.90 eV and optical energy gap is 3.3 eV in thin films is obtained. The values of work function of ITO, Au, Cu and Pd electrodes are energetically close to conductivity level of holes and holes in…
Self-Trapped Localized Modes in Photonic Crystal Fibers
2002
We demonstrate the existence of self-trapped localized modes in photonic crystal fibers. We analyze these solutions in terms of the parameters of the photonic crystal cladding and the nonlinear coupling.
Using crystallographic shear to reduce lattice thermal conductivity: high temperature thermoelectric characterization of the spark plasma sintered Ma…
2013
Engineering of nanoscale structures is a requisite for controlling the electrical and thermal transport in solids, in particular for thermoelectric applications that require a conflicting combination of low thermal conductivity and low electrical resistivity. We report the thermoelectric properties of spark plasma sintered Magnéli phases WO2.90 and WO2.722. The crystallographic shear planes, which are a typical feature of the crystal structures of Magnéli-type metal oxides, lead to a remarkably low thermal conductivity for WO2.90. The figures of merit (ZT = 0.13 at 1100 K for WO2.90 and 0.07 at 1100 K for WO2.722) are relatively high for tungsten-oxygen compounds and metal oxides in general…
Luminescence of ferroelectric crystals: LiNbO3and KNbO3
2000
Abstract The thermostimulated luminescence and time-resolved luminescence of LiNbO3 (congruent, stoichiometric, Eu−, Mn−, or Cr−doped) and KNbO3 crystals (undoped, Fe−, or Mn− doped) excited by X-ray, pulsed nitrogen laser or pulsed electron beam were studied. The luminescence decay times of niobium-oxygen groups (regular or perturbed by defect or impurity) were obtained. It is shown that the energy transfer from bulk to the activator in LiNbO3 is not effective during the electron-hole recombination process.