Search results for "CORRELATED"
showing 10 items of 1174 documents
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance
2021
$\mathrm{Tm}\mathrm{Fe}{\mathrm{O}}_{3}$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$ axis (below 82 K) to the $a$ axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be…
Lattice phonon modes of the high-pressure phase CuCl-IV
1999
Raman spectra of isotopically pure CuCl samples ${(}^{63}\mathrm{CuCl}$ and ${}^{65}\mathrm{CuCl})$ were measured under hydrostatic pressure up to 14 GPa at low temperature $(5 \mathrm{K}).$ Up to six Raman modes were resolved for the binary BC8-analog phase CuCl-IV in the range from 4.1 to 14 GPa. The phonon dispersion relations of this phase were calculated within a rigid ion model. Based on this calculation an assignment for the observed Raman-active modes is proposed. The calculated pressure dependences of mode frequencies reproduce the experimental results. Raman spectra support the existence of the phase CuCl-IIa in a narrow pressure range from 3.3 to 4.1 GPa.
Optimum Carrier Concentration in n-Type PbTe Thermoelectrics
2014
Taking La- and I-doped PbTe as an example, the current work shows the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level. The high doping effectiveness allows the carrier concentration to be precisely designed and prepared to control the Fermi level. In addition to the Fermi energy tuning, La-doping modifies the conduction band, leading to an increase in the density of states effective mass that is confirmed by transport, infrared reflectance and hard X-ray photoelectron spectroscopy measurements. Taking such a band structure modification effect into account, the electrical transport properties can then be well-described by a self-consistent single…
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Surface resonance of thin films of the Heusler half-metal Co2MnSi probed by soft x-ray angular resolved photoemission spectroscopy
2019
Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of ${\mathrm{AlO}}_{x}$ capped epitaxial thin films of the ferromagnetic half-metal ${\mathrm{Co}}_{2}\mathrm{MnSi}$ ex situ by soft x-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX-ARPES results and photoemission calculations including surface effects was obtained. In particular, we observed in line with our calculations a large photoemission intensity at the center of the Brillouin zone, which does not originate from bulk states, but from a surface r…
Neutron scattering study of structural and magnetic size effects in NiO
2013
Nickel oxide powders with the grain size of 13–1500 nm have been studied by neutron scattering, scanning electron microscopy and vibrating sample magnetometry. We have found that the atomic structure and the antiferromagnetic ordering are nearly independent of the average size of grains. The existence of the uncompensated spins in nanoparticles with the grain size below 100 nm has been detected.
Spin state of a single-molecule magnet (SMM) creating long-range ordering on ferromagnetic layers of a magnetic tunnel junction – a Monte Carlo study
2021
Paramagnetic single-molecule magnets (SMMs) interacting with the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) produce a new system. The properties and future scope of new systems differ dramatically from the properties of isolated molecules and ferromagnets. However, it is unknown how far deep in the ferromagnetic electrode the impact of the paramagnetic molecule and ferromagnet interactions can travel for various levels of molecular spin states. Our prior experimental studies showed two types of paramagnetic SMMs, the hexanuclear Mn6 and octanuclear Fe–Ni molecular complexes, covalently bonded to ferromagnets produced unprecedented strong antiferromagnetic coupling between …
Two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ inteface with a potential barrier
2015
We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hopping term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps …
Charge-carrier density collapse in and epitaxial thin films
2000
We measured the temperature dependence of the linear high field pH of La0.67Ca0.33MnO3 Tc = 232K) and La0.67Sr0.33MnO3 Tc = 345K) thin films in the temperature range from 4 K up to 360 K in magnetic fields up to 20 T. At low temperatures we find a charge-carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature Tc a dramatic drop in the number of charge-carriers n down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated ma…
Influence of thickness and interface on the low-temperature enhancement of the spin Seebeck effect in YIG films
2016
The temperature-dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y_{3}Fe_{5}O_{12} (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. We find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons in the bulk of the material. We further …