Search results for "Capacitance"
showing 10 items of 112 documents
Does Transfer Capacitive Resistive Energy Has a Therapeutic Effect on Peyronie's Disease? Randomized, Single-Blind, Sham-Controlled Study on 96 Patie…
2017
<b><i>Background/Aims/Objectives:</i></b> We have investigated the clinical and physiological effects of Transfer Capacitive Resistive Energy (TCARE) therapy on men with Peyronie's disease (PD). <b><i>Methods:</i></b> Ninety-six men with PD have been randomized in a 2:1 ratio to receive 3 sessions of TCARE therapy or sham therapy. Pain, penile curvature and erectile function have been assessed before the first treatment and up to 9 months after the end of treatment, using the Visual Analogue Scale for the pain, a goniometer to measure the degree of curvature using at-home photography and an International Index of Erectile Function (IIEF-5) que…
Transformation Algorithm of Dielectric Response in Time-Frequency Domain
2014
Published version of an article in the journal: Mathematical Problems in Engineering. Also available from the publisher at: http://dx.doi.org/10.1155/2014/547105 A transformation algorithm of dielectric response from time domain to frequency domain is presented. In order to shorten measuring time of low or ultralow frequency dielectric response characteristics, the transformation algorithm is used in this paper to transform the time domain relaxation current to frequency domain current for calculating the low frequency dielectric dissipation factor. In addition, it is shown from comparing the calculation results with actual test data that there is a coincidence for both results over a wide …
AMORPHOUS SEMICONDUCTOR-ELECTROLYTE JUNCTION. A NEW INTERPRETATION OF THE IMPEDANCE DATA OF AMORPHOUS SEMICONDUCTING FILMS ON METALS.
1986
On the basis of the theory of amorphous semiconductor Schottky barrier an equivalent electrical circuit of the amorphous oxide film/electrolyte interface is proposed.—The analytical expressions for the equivalent conductance and capacitance of the barrier are reported in the hypothesis of a constant density of states within the mobility gap.—According to this model, the semiconducting properties and the impedance behaviour at different frequencies of anodic oxide films on Niobium are interpreted by taking into account the amorphous nature of the films.—An explanation for the anomalous behaviour of the Mott-Schottky plots usually observed with amorphous anodic oxide films is presented.—The p…
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions
2011
Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…
Optimization of anodizing process of tantalum for Ta2O5-based capacitors
2020
Anodic oxides were grown to 50 V on Ta in several organic ions containing anodizing baths. Their properties were compared with anodic Ta oxide film grown to the same formation voltage in 0.1 M NaOH. Anodizing process carried out in sodium citrate led to the growth of the anodic oxide with the best blocking properties whilst, when Ta is anodized in sodium adipate, a significant part of the circulated charge is wasted in side reactions, such as oxygen evolution. Photoelectrochemical measurements showed the presence of optical transitions at energy lower than the band gap for the anodic films grown in citrate and tartrate electrolytes, attributed to localized electronic states located close to…
Dense ionic fluids confined in planar capacitors: in- and out-of-plane structure from classical density functional theory
2016
The ongoing scientific interest in the properties and structure of electric double layers (EDLs) stems from their pivotal role in (super)capacitive energy storage, energy harvesting, and water treatment technologies. Classical density functional theory (DFT) is a promising framework for the study of the in- and out-of-plane structural properties of double layers. Supported by molecular dynamics simulations, we demonstrate the adequate performance of DFT for analyzing charge layering in the EDL perpendicular to the electrodes. We discuss charge storage and capacitance of the EDL and the impact of screening due to dielectric solvents. We further calculate, for the first time, the in-plane str…
Analogy between the effects of a mechanical and chemical perturbation on the conductivity of passive films
2002
Abstract In order to study the passivity breakdown of a type 316L stainless steel, the electrochemical impedance and surface stresses were measured under straining conditions. The Mott–Schottky analysis, performed at high frequency, appears as very useful method to study, below the apparent yield strength, the effects of a mechanical stress on the capacitance values. The results obtained in sodium chloride media indicate that the semiconducting properties of passive films formed in a tensile stress field reflect a higher vacancies concentration than those formed in a stress-free state, suggesting that the passive film conductivity is increased. It was also shown that the Mott–Schottky plots…
Polyoxometalate-based metal-organic frameworks for boosting electrochemical capacitor performance
2019
Abstract Polyoxometalate-based metal-organic frameworks (POMOFs) possess promising applications as capacitors. Herein, we report the syntheses, structures and electrochemical properties of five copper-containing POMOFs: [CuI4H2(btx)5(PW12O40)2]·2H2O (1), [CuIICuI3(H2O)2(btx)5(PWVI10WV2O40)]·2H2O (2), [CuI6(btx)6(PWVI9WV3O40)]·2H2O (3), [CuI4H2(btx)5(PMo12O40)2]·2H2O (4) and [CuIICuI3(btx)5(SiMoVI11MoVO40)]·4H2O (5) (btx = 1,4-bis(triazol-1-ylmethyl) benzene) with potential applications as capacitors. Compounds 1–3 contain the same Keggin-type polyoxometalate (POM) although with different oxidation states, allowing the analysis of the effect of the electronic population on the capacitance pe…
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
2021
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…