Search results for "Chalcogenide"

<title>Application of amorphous chalcogenide thin films in optical recording technologies</title>

2005

A review of the recent advances and developments in the practical application of amorphous chalcogenide materials is presented, focusing special attention to holography and lithography. The main functional principles and practical application of amorphous chalcogenide photoresists for production of the embossed rainbow holograms and holographic optical elements are discussed. The laser interference lithography can be used as a low-cost method for the exposure of large surfaces with regular patterns like subwavelength-gratings and microsieves. The surface-relief and reftactive-index modulated gratings with a period of about 50 nm and less can be fabricated by immersion holographic method. Th…

Surface relief formation in amorphous chalcogenide thin films during holographic recording

2010

Abstract This report present the studies of direct holographic recording of the surface relief gratings on amorphous As2S3 films by 532 nm laser light. By giving extra time for recording exposure (more than necessary for volume amplitude-phase optical recording, e.g. Kikineshi, 2000 [2] ), changes of surface relief in the resist material can be observed. This direct surface relief formation phenomenon during holographic recording is discussed here from the side of recording light polarization. Efficiency of the relief formation may also depend on softening temperature of the film material and this influence was studied as well by using additional incoherent light for extra exposure during r…

Thickness identification of atomically thin InSe nanoflakes on SiO2/Si substrates by optical contrast analysis

2015

Abstract Single layers of chalcogenide semiconductors have demonstrated to exhibit tunable properties that can be exploited for new field-effect transistors and photonic devices. Among these semiconductors, indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin nanosheets are essential. Here, we employ a transfer matrix approach to numerically calculate the optical contrast between thin InSe flakes and commonly used SiO2/Si substrates, which nicely re…

Optical grating recording in ChG thin film by electron beam

2013

Abstract Recording capabilities of As Se S chalcogenide (ChG) glasses using electron beam (EB) lithography have been investigated in this study. After exposure with EB the thin films of these inorganic glasses can be etched in alkaline amine solvent with high selectivity. High resolution, smooth shaped structures have been fabricated using ChG thin films. Height of developed pattern can be controlled through changing applied electron dose.

Optical, thermal, electrical, damage, and phase-matching properties of lithium selenoindate

2010

Lithium selenoindate (LiInSe2) is a new nonlinear chalcogenide biaxial crystal, related to LiInS2 and transparent from 0.54 to 10 μm at the 50% level (10 mm thickness), which has been successfully grown in large sizes and with good optical quality. We report on what we believe to be new physical properties that are relevant for laser and nonlinear optical applications and summarize all relevant characteristics, both from the literature and as measured in the present work. With respect to AgGaS(e)2 ternary chalcopyrite materials, LiInSe2 displays a nearly isotropic thermal expansion behavior with three- to five-times-larger thermal conductivities associated with high optical damage threshold…

Bismuth-Catalyzed Growth of SnS2 Nanotubes and Their Stability

2009

Optical and Vibrational Spectra of CsCl-Enriched GeS2-Ga2S3 Glasses

2016

Optical and FTIR spectroscopy was employed to study the properties of 80GeS2-20Ga2S3-CsCl chalcohalide glasses with CsCl additives in a temperature range of 77–293 K. It is shown that CsCl content results in the shift of fundamental absorption edge in the visible region. Vibrational bands in FTIR spectra of (80GeS2-20Ga2S3)100 − х (СsCl) x (x = 5, 10, and 15) are identified near 2500 cm−1, 3700 cm−1,, around 1580 cm−1, and a feature at 1100 cm−1. Low energy shifts of vibrational frequencies in glasses with a higher amount of CsCl can be caused by possible thermal expansion of the lattice and nanovoid agglomeration formed by CsCl additives in the inner structure of the Ge-Ga-S glass.

Model of holographic recording in amorphous chalcogenide films using subband-gap lightat room temperature

1997

The subband-gap light holographic recording in amorphous as-evaporated ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ films at room temperature is experimentally studied. Properties are considerably different from those of usual holographic recording based on the band-gap light induced structural changes. The most important characteristic features of this nonpermanent recording include photoinduced refractive index increase, weak photobleaching, the absence of the photoinduced thickness changes, light polarization dependence, large exposures, holographic grating shifts during the exposure and a peculiar two maxima spatial frequency response. The first order diffraction efficiency up to 4.1% is achie…

Te-As-Se glass microstructured optical fiber for the middle infrared

2009

International audience; We present the first fabrication, to the best of our knowledge, of chalcogenide microstructured optical fibers in Te-As-Se glass, their optical characterization, and numerical simulations in the middle infrared. In a first fiber, numerical simulations exhibit a single-mode behavior at 3.39 and 9.3 μm, in good agreement with experimental near-field captures at 9.3 μm. The second fiber is not monomode between 3.39 and 9.3 μm, but the fundamental losses are 9 dB/m at 3:39 μm and 6 dB/m at 9.3 μm. The experimental mode field diameters are compared to the theoretical ones with a good accordance.

Influence of the age of amorphous nonannealed As2S3 thin films on holographic properties

1998

The dependences of the maximal first order diffraction efficiency and the corresponding specific recording energy on the holographic grating period were studied. Grating period was varied from 0.40 to 70.0 μm. Both fresh and aged films were used. A large holographic recording efficiency decrease in the course of aging is found to take place. These changes are due to the effective film grain size increase caused by the relaxational structural changes and atmospheric oxygen exposure. Results are explained with the aid of stress fields induced by the evaporation and holographic recording. The obtained results can be used to optimize the hologram recording in amorphous chalcogenide films.