Search results for "Crystalline Silicon"
showing 10 items of 74 documents
A procedure to evaluate the seven parameters of the two-diode model for photovoltaic modules
2019
Abstract The paper presents an analytical procedure to calculate the seven parameters of the two-diode model of photovoltaic (PV) panels for any value of the solar irradiance and cell temperature. Six parameters (the photocurrent, the diode reverse saturation currents, the quality factor of the first diode and the series and shunt resistances), are evaluated by solving the equations related to the properties of the main points of the current-voltage (I-V) characteristics. The further information, necessary to calculate the entire set of seven truly independent parameters, is based on two conditions that have to be simultaneously satisfied: 1) the exclusion of negative values of the model pa…
An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules
2020
Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…
Crystallization kinetics of amorphous SiC films: Influence of substrate
2005
Abstract The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nano-crystalline β-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 °C. A modified Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into β-SiC as an interface controlled, three-dimensional growth processes fr…
Amorphous Silicon Nanotubes via Galvanic Displacement Deposition
2013
Amorphous silicon nanotubes were grown in a single step into a polycarbonate membrane by a galvanic displacement reaction conducted in aqueous solution. In order to optimize the process, a specifically designed galvanic cell was used. SEM images, after polycarbonate dissolution, showed interconnected nanotube bundles with an average length of 18 μm and wall thickness of 38 nm.The deposited silicon was revealed by EDS analysis, whilst X-ray diffraction and Raman spectroscopy showed that nanotubes have an amorphous structure. Silicon nanotubes were also characterized by photo-electrochemical measurements that showed n-type conductivity and optical gap of ~1.6 eV. Keywords: Silicon nanotubes, …
Cooling of Hot Electrons in Amorphous Silicon
1997
ABSTRACTMeasurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.
Facile synthesis and characterization of functionalized, monocrystalline rutile TiO2 nanorods.
2006
Functionalized, monocrystalline rutile TiO2 nanorods were prepared from TiCl4 in aqueous solution under acidic conditions in the presence of dopamine, followed by aging and hydrothermal treatment at 150 degrees C. The surface-bound organic ligand controls the morphology as well as the crystallinity and the phase selection of TiO2. The presence of monocrystalline rutile TiO2 was confirmed by X-ray powder diffraction and HRTEM investigations. The as-prepared nanorods are soluble in water at pH3. The surface functionalization was analyzed by IR and 1H NMR, confirming the presence of dopamine on the surface. The surface amine groups can be tailored further with functional molecules such as dyes…
Superficial defects induced by argon and oxygen bombardments on (110) TiO2 surfaces
1998
Abstract Compositional and chemical changes of titanium dioxide monocrystalline surfaces induced by bombardment with 4 keV argon and oxygen ions have been studied by AES, XPS and AFM. Argon ion bombardment induced strong changes in the composition and chemical state of the surface: loss of oxygen due to preferential sputtering occurred, and, related to this, Ti4+ species were reduced to Ti3+ and Ti2+. During oxygen bombardment, competition between preferential sputtering of oxygen ions of the oxide surface and oxygen implantation was observed. This phenomenon was found to be strongly dependent upon the incidence angle of the oxygen ions. Moreover, an oxygen bombardment with normal incidence…
Third-Generation Solar Cells: Concept, Materials and Performance - An Overview
2019
The large scarcity of natural fuels in earth crust has triggered to search alternative energy reservoirs for the future generation of human life. Because of large abundancy, solar energy is considered as big hope for the future generation energy utilization for commercial as well as home applications. The scientific revolution achieved in synthesis and processing of semiconductor nanomaterials, organic conducting polymers have led into new dimension in fabrication of future-generation solar cells. Reduction in the dimension of semiconductor nanomaterials significantly influences on their structural and optical properties which is helpful for the excellent photon harvesting. Also, their larg…
Time-dependent simulation of Czochralski silicon crystal growth
1997
We have developed a detailed mathematical model and numerical simulation tools based on the streamline upwind/Petrov-Galerkin (SUPG) finite element formulation for the Czochralski silicon crystal growth. In this paper we consider the mathematical modeling and numerical simulation of the time-dependent melt flow and temperature field in a rotationally symmetric crystal growth environment. Heat inside the Czochralski furnace is transferred by conduction, convection and radiation, Radiating surfaces are assumed to be opaque, diffuse and gray. Hence the radiative heat exchange can be modeled with a non-local boundary condition on the radiating part of the surface. The position of the crystal-me…
Nanostructure Formation on ZnSe Crystal Surface by Electrochemical Etching
2021
The article describes a simple method for nanostructuring the surface of monocrystalline zinc selenide. It is shown that the traditional electrochemical etching of n-ZnSe (111) samples in a concentrated solution of nitric acid leads to the appearance of massive etching pits and small pores on the surface. The dynamics of the process and stages of crystal dissolution has been studied. It is assumed that the porous zinc selenide obtained in this way can be used in optoelectronic structures, as well as as buffer layers for growing zinc oxide.