Search results for "Crystalline Silicon"
showing 10 items of 74 documents
Study of silicon crystal surface formation based on molecular dynamics simulation results
2014
Abstract The equilibrium shape of 〈 110 〉 -oriented single crystal silicon nanowire, 8 nm in cross-section, was found from molecular dynamics simulations using LAMMPS molecular dynamics package. The calculated shape agrees well to the shape predicted from experimental observations of nanocavities in silicon crystals. By parametrization of the shape and scaling to a known value of { 111 } surface energy, Wulff form for solid-vapor interface was obtained. The Wulff form for solid–liquid interface was constructed using the same model of the shape as for the solid–vapor interface. The parameters describing solid–liquid interface shape were found using values of surface energies in low-index dir…
Impurity analyses of silicon wafers from different manufacturing routes and their impact on LID of finished solar cells
2013
Summarizes the measurements of impurity concentrations in directionally solidified silicon ingots from different feedstocks. The substitutional Carbon and interstitial Oxygen are measured on as-sawn wafers using FTIR. Active iron concentration is mapped on a-Si:H passivated wafers. It is observed that these impurities present in Elkem Solar Grade Silicon (ESS™) concentrations are comparable to the standard polysilicon which are in the acceptable ranges for silicon for solar industry. The measured LID of the finished solar cells is also comparable.
UV-induced Degradation Study of Multicrystalline Silicon Solar Cells Made from Different Silicon Materials
2013
Abstract The effect of ultraviolet-induced degradation (UV-ID) on solar cells made from two different solar grade materials has been compared. By using identical wafer and cell production units, effects originating in the two materials; solar grade produced by the Elkem Solar method (ESS™) was compared to standard polysilicon solar cells. Silicon wafers were selected precisely from similar positions from respective silicon bricks to process identical standard solar cells. The quantum efficiency maps at particular laser wavelengths and IV parameters of all solar cells were measured before and after UV-ID to visualize defects sites in the solar cells and to observe the extent of degradation. …
Positron Annihilation in Defected Monocrystalline Gold Samples
2005
Angular distribution of the positron annihilation quanta was measured for monocrystalline gold samples, oriented in (110) and (111) directions. The samples were deformed by elongation for different deformation degrees. The S and W parameters as a function of deformation degree of the sample were determined. It was found that the dynamics of the dislocations and vacancy generation during the sliding of some crystallographic planes, depends on the crystallographic direction.
Positron Annihilation in Metals Defected by Action of the Tensile Force
2006
Results of experimental investigations of uniaxially elongated mono- and polycrystalline samples of several metals (Fe, Ta, Pd, Ag, and Au), performed using the positron annihilation methods, are reviewed. The dependences of the S-parameters and positron lifetimes on the relative elongation of the samples were presented. The data obtained for polycrystalline samples indicate that in the proportionality and limited proportionality regions the changes in the physical properties are governed mainly by generation of vacancies and by kinetics of formation and transformations of vacancy clusters occurring flrst of all on the grain boundaries of monocrystallites. In the region of plastic deformati…
Morphology Study of the Porosity of the GaP Surface Layer Formed on the Surface of a Single Crystal by Electrochemical Etching
2021
The article analyzes the morphological characteristics of a porous GaP surface layer formed on the surface of monocrystalline gallium phosphide by electrochemical etching. The correlations between the etching time and the appropriate size, shape and density of pores have been established and studied in detail.
Selenium Nanoparticles Synthesized via a Facile Hydrothermal Method
2012
Crystalline selenium nanostructures were synthesized from the reaction of a GeSe3 glass with water at 85°C for 144 hours. The hydrolysis of the Ge-Se bonds releases Se fragments in the solution where they form a colloidal suspension of amorphous nanospheres. The later evolve toward a more stable hexagonal phase (trigonal) leading to the anisotropic growth of one-dimensional monocrystalline structures. Filaments, bars and tubes of monocrystalline trigonal selenium were obtained with diameters ranging from 10 nm to 1 µm and aspect ratio up to 180. This simple process in aqueous solution opens new perspectives for the synthesis of 1D nanoparticles of trigonal selenium at large scale.
Crystallographic analysis of extended defects in diamond-type crystals
2005
Abstract To investigate irradiation-induced Si amorphization during its initial stages, we have performed a classical molecular-dynamics (MD) calculation for the case of self-irradiation by 5 keV ions at a low temperature of 100 K. We examined the geometry of self-interstitial atom (SIA) clusters using the pixel mapping (PM) method, on the output data of MD calculations. Perfect crystalline silicon (c-Si) is amorphized by self-irradiation, and we observe that many SIA are produced. During sequential self-irradiation, the most frequently observed species were isolated SIA, i.e. I1 (monomer). The fractions of SIA clusters decreased as I2 (dimer), I3 (trimer), and I4 (tetramer) clusters, respe…
Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3
2015
Abstract We study the impact of ozone-based Al2O3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration…
ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon
2002
Paramagnetic centers in hydrogenated microcrystalline silicon, mc-Si:H have been studied using dark and light-induced electron-spin resonance ~ESR!. In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are gi52.0096 and g’52.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (gi51.999, g’51.996), while the other is characterized by large, unresolved broadening such that unique g values cannot b…