Search results for "Crystallographic"
showing 10 items of 202 documents
Periodic models in quantum chemical simulations ofF centers in crystalline metal oxides
2007
We present a survey of recent first principles simulations of the neutral oxygen vacancies (F centers) existing as native or radiation-induced point defects in various crystalline metal oxides in different forms (bulk, bare substrate surface, and on the interface with metal adsorbates). We mainly consider periodic models in calculations of point defects using the metal oxide supercell or cyclic clusters. We compare different formalisms of first principles calculations, mostly the Density Functional Theory (DFT) as implemented in the framework of either localized basis set of atomic orbitals or delocalized basis sets of plane waves. We analyze in detail the structural and electronic properti…
Ab initio modelling of silver adhesion on the corundum (0001) surface
2003
The Ag/a-Al2O3(0001) interface was simulated using ab initio slab calculations. We have studied silver adhesion on both Al- and Oterminated corundum substrates. The latter case may be considered as silver adhesion on a defective Al-terminated corundum surface with external aluminium vacancies. The dependence of the adhesion energy on the interfacial distance has been analyzed for the two favorable Ag adsorption positions and for two metal coverages (a 1/3 monolayer of the Ag(111) crystallographic plane and a full Ag(111) monolayer, 1 ML). The two different terminations (Al- and O-) give rise to qualitatively different results. In the former case, the small adhesion energies per Ag atom are …
Visible to vacuum-UV range optical absorption of oxygen dangling bonds in amorphous SiO2
2011
Synthetic silica glass with an optical absorption spectrum dominated by oxygen dangling bonds (nonbridging oxygen hole centers, or NBOHCs) and having negligible (1%) contribution from the usually copresent Si dangling bonds (E\ensuremath{'}-centers), was prepared by room temperature ultraviolet photobleaching of high SiOH content (``wet'') silica, irradiated by F${}_{2}$ laser (7.9 eV) at $T$ = 80 K. This allowed us to obtain the up-to-now controversial optical absorption spectrum of NBOHC in the ultraviolet and vacuum-ultraviolet (UV-VUV) region of the spectrum and to show that it is semicontinuous from 4 to 7.8 eV and cannot be represented by a pair of distinct Gaussian bands. Since NBOHC…
Using the methods of radiospectroscopy (EPR, NMR) to study the nature of the defect structure of solid solutions based on lead zirconate titanate (PZ…
2014
The nature of intrinsic and impurity point defects in lead zirconate titanate (PZT) ceramics has been explored. Using electron paramagnetic resonance (EPR), nuclear magnetic resonance (NMR), and X-ray photoelectron spectroscopy (XPS) methods, several impurity sites have been identified in the materials, including the Fe 3+ -oxygen vacancy (VO) complex and Pb ions. Both of these centers are incorporated into the PZT lattice. The Fe 3+ -V paramagnetic complex serves as a sensitive probe of the local crystal field in the ceramic; the symmetry of this defect roughly correlates with PZT phase diagram as the composition is varied from PbTiO 3 to PbZrO 3 . NMR spectra 207 Pb in PbTiO 3 , PbZrO 3 ,…
The nature of the defect structure of solid solutions based on lead zirconate titanate (PZT): Evidence from EPR and NMR
2013
The nature of intrinsic and impurity point defects in lead zirconate titanate (PZT) ceramics has been explored. Using electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) methods several impurity sites have been identified in the materials, including Fe3+-oxygen vacancy (VO) complex and Pb ions. Both of these centers are incorporated into the PZT lattice. The Fe3+-VO paramagnetic complex serves as a sensitive probe of the local crystalline field in the ceramic; the symmetry of this defect is roughly correlated with PZT phase diagram as composition is varied from PbTiO3 to PbZrO3. NMR spectra 207Pb in PbTiO3, PbZrO3 and PZT with iron content from 0 to 0.4 mol % showed t…
Role ofH2Oin the thermal annealing of theEγ′center in amorphous silicon dioxide
2009
The model for the annealing of a radiation-induced point defect in silica, the ${\text{E}}_{\ensuremath{\gamma}}^{\ensuremath{'}}$ center, is identified in the temperature range $(150--550)\ifmmode^\circ\else\textdegree\fi{}\text{C}$. Thermal treatments in controlled atmospheres of water vapor, oxygen, or helium of irradiated amorphous silicon dioxide are carried out. Direct experimental evidences that the annealing of the ${\text{E}}_{\ensuremath{\gamma}}^{\ensuremath{'}}$ center is caused by a reaction with diffusing water molecules are found. A rate equation system describing this annealing process is inferred, and its solutions are compared with experimental data to obtain quantitative …
First-principles calculations of iodine-related point defects in CsPbI3
2019
Many thanks to A. Lushchik, A. Popov and R. Merkle for numerous fruitful discussions. This study was partly supported by the Latvian Council for Science (grant LZP-2018/1-0147 to EK). R.A.E acknowledges the assistance of the University Computer Center of Saint-Petersburg State University for high-performance computations.
The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.
2009
The strain state of 1 and 2.5 nm thick GaN insertions in GaN/AlN nanocolumn heterostructures has been studied by means of a combination of high resolution transmission electron microscopy, Raman spectroscopy and theoretical modeling. It is found that 2.5 nm thick GaN insertions are partially relaxed, which has been attributed to the presence of dislocations in the external AlN capping layer, in close relationship with the morphology of GaN insertions and with the AlN capping mechanism. The observed plastic relaxation in AlN is consistent with the small critical thickness expected for GaN/AlN radial heterostructures.
Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites
2021
The work was supported by the Polish National Science Centre (Project No. 2018/31/B/ST8/00774), by the NATO SPS Project G5647, and by the Ministry of Education and Science of Ukraine (Project DB/Kinetyka no. 0119U002249). L.V. acknowledges support of the National Research Foundation of Ukraine under Grant No. 2020.02/0373 “Crystalline phosphors’ engineering for biomedical applications, energy saving lighting and contactless thermometry”. Researchers from Tartu were supported by the ERDF fundings in Estonia granted to the Centre of Excellence TK141 “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics (HiTechDevices)” (Grant No. 2014-2020.4…
Ab initio calculations of charged point defects in GaN
2005
The Generalized Gradient Approximation (GGA) of a Density Functional Theory (DFT) in LCAO basis is used to determine electronic structure of charged point defects in hexagonal GaN. Impurities of MgGa, ZnGa, SiN and CN (the most common dopants) were considered for charge states 0, ±1, –2. The vacancies of VGa and VN were considered for charge states 0 and 0, ±1, ±2 respectively. The defects in consideration are compared from the point of view of the one-electron states localization. All the calculations were performed for a supercell containing 96 atoms. The divergence due to periodically repeated charges has been eliminated by the use of a uniform background charge of an opposite sign. (© 2…