Search results for "DIR"
showing 10 items of 10242 documents
Revealing the importance of interfaces for pure spin current transport
2021
Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin transport, one needs to characterize and correlate them to the fabrication method. Here we investigate pure spin current transport across interfaces and connect this with imaging of the interfaces. We study the detection of pure spin currents via the inverse spin Hall effect in Pt and the related spin current absorption by Pt in Py-Cu-Pt lateral spin valves. Depending on the fabrication process, we either find a large (inverse) spin Hall effect signal and low sp…
Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.
2019
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Direct method for calculating temperature-dependent transport properties
2015
We show how temperature-induced disorder can be combined in a direct way with first-principles scattering theory to study diffusive transport in real materials. Excellent (good) agreement with experiment is found for the resistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder are calculated from first principles. For Fe, the agreement with experiment is limited by how well the magnetization (of itinerant ferromagnets) can be calculated as a function of temperature. By introducing a simple Debye-like model of spin disorder parameterized to reproduce the experimental magnetization, the temperature dependence of the average resistivity, the anisotropic magnetoresistance and the spi…
Direct chill casting of aluminium alloys under electromagnetic interaction by permanent magnet assembly
2018
Direct chill casting is one of the methods used in industry to obtain good microstructure and properties of aluminium alloys. Nevertheless, for some alloys grain structure is not optimal. In this study, we offer the use of electromagnetic interaction to modify melt convection near the solidification interface. Solidification under various electromagnetic interactions has been widely studied, but usually at low solidification velocity and high thermal gradient. This type of interaction may succeed fragmentation of dendrite arms and transport of solidification nuclei thus leading to improved material structure and properties. Realization of experimental small-scale crystallizer and electromag…
Photoluminescence from strained InAs monolayers in GaAs under pressure
1994
bulk GaAs. At pressures above the band crossover two emission bands are observed. These bands, characterized by having negative pressure coefBcients, are attributed to the type-I transition between conduction-band X „and heavy-hole states of the InAs monolayer and the type-II transition &om X states in GaAs to InAs heavy-hole states. The results are interpreted in terms of tight-binding band-structure calculations for the strained InAs-monolayer — bulk-GaAs system. I. INTRODUCTION Highly strained InAs jGaAs heterostructures have recently attracted interest due to their unusual electronic and optical properties. ~ 4 Epitaxial isomorphic growth of InAs on GaAs can be achieved only up to a sma…
Direct observation of a buckling transition during the formation of thin colloidal crystals
2007
We have investigated a colloidal suspension in a thin wedge formed by two glass plates in the presence of a lateral pressure. Starting with a single hexagonal layer, with increasing separation between the glass plates additional layers are added. This process is accompanied by a number of structural transitions necessary to maintain a high packing fraction under the given boundary conditions. Besides the well-known sequence of hexagonal and quadratic phases, we observe two new phases which are identified with the buckling and the rhombic phase recently predicted by other authors.
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
2017
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM…
Electron–phonon effects on the direct band gap in semiconductors: LCAO calculations
2002
Abstract Using a perturbative treatment of the electron–phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band in…
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
2000
6 páginas, 3 figuras.