Search results for "Diffraction"

On the possibility of synthesizing multilayered coatings in the (Ti,Al)N system by RGPP: A microstructural study

2019

International audience; Radiofrequency magnetron sputtering combined with reactive gas pulsing process was used to synthesize two titanium aluminum nitride multilayer films using a periodically controlled nitrogen flow rate changing from 0.4 to 1 sccm (sample S04-1) and from 0 to 1 sccm (sample S0-1). A metallic TiAl buffer layer was deposited on the etched substrates before the deposition to enhance their adhesion. The films were characterized using mainly transmission electron microscopy and electron diffraction. The role of the crystallinity of the buffer TiAl metallic layer deposited before gas introduction on the growth orientations is emphasized. It is shown that the formation of a mu…

Anomalous Valence Contrast of Metal Transition in Nanocrystalline Ferrite

2001

Conformationally rigid molecular and polymeric naphthalene-diimides containing C6H6N2 constitutional isomers

2021

Organic thin films based on naphthalenediimides (NDIs) bearing alkyl substituents have shown interesting properties for application in OLEDs, thermoelectrics, solar cells, sensors and organic electronics. However, the polymorphic versatility attributed to the flexibility of alkyl chains remains a challenging issue, with detrimental implications on the performances. Aryl analogues containing C6H6N2 constitutional isomers are herein investigated as one of the possible way-out strategies. The synthesis of molecular and polymeric species is described, starting from naphthaleneteracarboxyldianhydride with isomeric aromatic amines and hydrazine. The materials are fully characterized by spectrosco…

Electron diffraction tomography and X-ray powder diffraction on photoredox catalyst PDI

2019

N,N-Bis(2,6-diisopropylphenyl)-perylene-3,4,9,10-bis(dicarboximide) (PDI-iPr) is starting to be widely used as a metal-free homogeneous photoredox catalyst. The crystal structure was determined by a combination of electron diffraction tomography and X-ray powder diffraction and further validated by DFT-D calculations. Surprisingly, the molecular geometry of PDI-iPr leads to voids in the packing.

Co-precipitation synthesis of neodymium-doped yttrium aluminium oxides nanopowders: Quantitative phase investigation as a function of joint isotherma…

2007

Abstract Neodymium-doped yttrium aluminium nanopowders with nominal Nd:Y:Al ratio equal to X:3–X:5 (where X = 0, 0.006, 0.012, 0.024, 0.048, 0.081, 0.096, 0.171, 0.192, 0.384, 0.540 and 0.720) were prepared by the co-precipitation method and subjected to five cumulative stages of isothermal treatment in the temperature range from 900 to 1050 °C. The phase evolution of the oxides were investigated quantitatively by the X-ray powder diffraction approach using the Rietveld method of analysis. An almost single phase cubic garnet structure was attained at temperatures as low as 900 °C for specimens with neodymium loading less than ca. 6 at.% with respect to total (Nd + Y) atoms. Isothermal treat…

Epitaxial thin films of intermetallic compounds

2002

Publisher Summary The potential of epitaxial thin films of intermetallic compounds in basic and applied research is emerging. Although the growth of semiconductor heterostructures and compounds based on molecular beam epitaxy (MBE) and related methods has come through a 30-year history of ongoing refinement and sophistication, still much has to be learned concerning the growth and characterization of even moderately complex metallic thin film structures. MBE represents a well-defined crystallization technique based on the reactions among molecular or atomic beams of the constituent elements on a substrate or template at elevated temperatures in an ultrahigh vacuum (UHV) environment. Owing t…

Tuning the propagation constant by the anti-crossing bandgap prism coupling technique.

2012

A novel plasmonic structure based on an anticrossing bandgap prism coupling technique is proposed. The study has been carried out using photonic crystals based on diffraction gratings (bounded by dielectrics with identical dielectric functions) together with a high refractive index prism to couple the long-range surface plasmon polaritons to photons. We analyse the structure and demonstrate the ability for tuning the propagation constants of plasmon modes by changing the thickness of the gold grating. The comparison to non-bandgap techniques is studied, and the influence of the plasmonic configuration on the plasmon propagation constant is discussed as well. Experimental measurements were a…

<title>Dot-matrix holographic recording in amorphous chalcogenide films</title>

2006

We have developed PC controlled dot-matrix holographic recording system based on the CW diode pumped YAG:Nd SHG laser (wavelength 532 nm, power 30mW,) modulated electronically with TTL signals. Two-beam technique has been used with convergence angle 30o and PC controlled incident beam plane rotation 0-360o. Optical system consists of beam splitter, 40mm focus length forming cylindrical lens and 40mm focusing lens. Characteristic parameters of experimental equipment are following: spot size - 50-200 micrometers, direct laser writing area, limited by x-y positioning system, was 70mm x 70mm, number of writing head rotation positions up to 256 (8 bit), time of each exposure - 1-1000 msec. As th…

Holographic recording in amorphous chalcogenide semiconductor thin films

2003

Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.

Amorphous As–S–Se semiconductor resists for holography and lithography

2002

Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.