Search results for "Dopant"
showing 10 items of 162 documents
Optical investigation of the OH− groups in the LiNbO3 doped by copper
2019
Doping ions and OH− groups absorption bands spatial profiles were investigated for the case of congruent LiNbO3 single crystal grown by Czochralski technique. Doping was performed after the crystal...
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
2017
Abstract Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.
EPR study of Ce3+ luminescent centers in the Y2SiO5 single crystalline films
2017
Abstract The work reports results of EPR investigation of the Ce3+ incorporation in the Y2SiO5 and (Y,La)2SiO5 single crystalline films (SCFs), grown by liquid phase epitaxy method. The Ce3+ content determined from EPR spectra varied between 0.49 and 0.65 at. % in Y2SiO5 SCFs and strongly increased up to 1.9 at. % in (Y,La)2SiO5 SCF, suggesting a positive role of the La dopant in the incorporation of the Ce3+ ions into Y2SiO5 host. The EPR study showed the presence of only one type of Ce3+ centers (Ce1) corresponding to the localization of Ce3+ ions in the seven–fold coordinated positions of the Y2SiO5 host. No Ce2 center spectra (six-fold coordinated Ce3+ positions) were detected in films …
Structure formation and properties of corundum ceramics based on metastable aluminium oxide doped with stabilized zirconium dioxide
2021
Abstract The work presents a successful example of the use of YSZ binary systems for production of composite ceramic materials based on θ-Al2O3 with improved physical and mechanical characteristics which was previously considered an unpromising material. It was first obtained result of extreme nature of dependence of physical and mechanical properties of Al2O3+YSZ on the concentration of YSZ (ZrO2–3mol% of Y2O3) additive. The sintering temperature was decreased on 250 °C (from 1800 to 1550 °C). The phase composition of powders and the structure of ceramics of the Al2O3 + YSZ system were investigated depending on the amount of YSZ dopant, the structure-properties relationship was established…
Dopant solubility in ceria: alloy thermodynamics combined with the DFT+U calculations
2018
This research was partly funded by the Russian Science Foundation (under the project 14-43-0005) and ERA-NET HarvEnPiez project, with the computer resources provided by Stuttgart Supercomputing Centre (Project DEFTD 12939). A. C. also acknowledges financial support from the University of Latvia Foundation (Arnis Riekstins’s ‘‘MikroTik’’ donation). Authors thank R. Merkle, A. Popov for fruitful discussions.
Grain growth in Na 0.5 Bi 0.5 TiO 3 -based solid solutions
2019
This paper discusses effects of different dopants, sintering technique and parameters on microstructure and properties of pure and Yb, Er-doped Na0.5Bi0.5TiO3 (NBT). All stoichiometric compositions follow the abnormal grain growth mechanism (AGG) and exhibit a bimodal grain size distribution. Bi over-stoichiometry, two step sintering and hot pressing are effective inhibitors of AGG. Microstructure of sintered NBT greatly influences such properties as dielectric permittivity and depolarization temperature.
Chemical Engineering of Photoactivity in Heterometallic Titanium–Organic Frameworks by Metal Doping
2018
[EN] We report a new family of titanium-organic frameworks that enlarges the limited number of crystalline, porous materials available for this metal. They are chemically robust and can be prepared as single crystals at multi-gram scale from multiple precursors. Their heterometallic structure enables engineering of their photoactivity by metal doping rather than by linker functionalization. Compared to other methodologies based on the post-synthetic metallation of MOFs, our approach is well-fitted for controlling the positioning of dopants at an atomic level to gain more precise control over the band-gap and electronic properties of the porous solid. Changes in the band-gap are also rationa…
Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation
2019
Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. The production of such quantum devices calls for deterministic single atom doping techniques because conventional stochastic doping techniques are cannot deliver appropriate architectures. Here, we present the fabrication of arrays of praseodymium color centers in YAG substrates, using a deterministic source of single laser-cooled Pr$^+$ ions. The beam of single Pr$^+$ ions is extra…
ZnO and ZnO:Ga Ceramics for Advanced Scintillators
2020
The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the…
Single-Molecule Optical Switching: A Mechanistic Study of Nonphotochemical Hole-Burning
2001
Persistent spectral hole-burning of dopant chromophores embedded in solid matrices has proven to be a sensitive high-resolution spectroscopic tool to investigate structural and dynamic properties of amorphous and crystalline hosts at low temperature [1]. A commonly encountered mechanism of holeformation is the nonphotochemical process, for which it is assumed that the frequency selective laser excitation and the subsequent relaxation of guest and host eventually leads to a change of configurational degrees of freedom in the nearby environment of the photo-excited centers or in the impurities themselves (or both) [2]. However, detailed knowledge about the microscopic mechanism of the nonphot…