Search results for "EDC"

showing 10 items of 134 documents

ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON

2001

The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.

Materials scienceSiliconchemistrybusiness.industryTheoryofComputation_ANALYSISOFALGORITHMSANDPROBLEMCOMPLEXITYDopingHardware_INTEGRATEDCIRCUITSchemistry.chemical_elementOptoelectronicsRefrigerationElectron phonon couplingbusinessPhysics, Chemistry and Application of Nanostructures
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Chip-to-chip plasmonic interconnects and the activities of EU project NAVOLCHI

2012

In this paper, the chip-to-chip interconnection architecture adopted by the EU-project NAVOLCHI are discussed. The plasmonic physical layer consisting of a plasmonic nanoscale laser, a modulator, an amplifier and a detector is introduced. Current statuses of the plasmonic devices are reviewed.

Materials scienceTechnology and Engineeringbusiness.industryAmplifierDetectorPhysical layerPhysics::OpticsSi plasmonic transceiverplasmonic interconnectsChipComputer Science::Hardware ArchitectureNAVOLCHIModulationHardware_INTEGRATEDCIRCUITSPhysics::Atomic and Molecular ClustersOptoelectronicsTransceiverPhotonicsbusinessPlasmon
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Controlling the mode of operation of organic transistors through side chain engineering

2016

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…

Materials scienceTransconductanceNanotechnologyHardware_PERFORMANCEANDRELIABILITY02 engineering and technologyElectrolyte010402 general chemistry01 natural scienceslaw.inventionelectrochemical transistorlawMD MultidisciplinaryHardware_INTEGRATEDCIRCUITSSide chainConductive polymerMultidisciplinarySubthreshold conductionbusiness.industrysemiconducting polymersTransistor021001 nanoscience & nanotechnologyequipment and supplies0104 chemical sciencesorganic electronicsSemiconductorPhysical SciencesOptoelectronics0210 nano-technologybusinessHardware_LOGICDESIGNOrganic electrochemical transistor
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Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Materials sciencebusiness.industryElectronic Optical and Magnetic MaterialNAND gateNanotechnologyChemical vapor depositionNanocrystalReliabilityCondensed Matter PhysicsFlash memorySettore ING-INF/01 - ElettronicaFlash memoryElectronic Optical and Magnetic MaterialsThreshold voltageFlash (photography)NanocrystalMemory cellHardware_GENERALCharge trap flashMaterials ChemistryHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic Engineeringbusiness
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Feedback Biasing Based Adjustable Gain Ultrasound Preamplifier for CMUTs in 45nm CMOS

2018

As CMOS technology is scaled down, supply voltages are decreasing and intrinsic gain of the nanoscale CMOS transistors is dropping while the threshold voltages of transistors are remaining relatively constant. In such scaled down nanoscale CMOS technologies, conventional vertical stacking architectures (for example. cascode architectures) for high-gain becomes no more attractive. In this paper we present the analysis and design of a feedback biasing based adjustable gain ultrasound preamplifier which is capable of amplifying signals from 15 MHz to 45 MHz from Capacitive Micromachined Ultrasound Transducers (CMUTs) in 45nm CMOS technology for medical ultrasound imaging applications. From the…

Materials sciencebusiness.industryPreamplifierCapacitive sensing020208 electrical & electronic engineeringTransistor020206 networking & telecommunicationsBiasing02 engineering and technologylaw.inventionCapacitive micromachined ultrasonic transducersCMOSlawHardware_INTEGRATEDCIRCUITS0202 electrical engineering electronic engineering information engineeringOptoelectronicsCascodebusinessVoltage2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID)
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Transconductance Converters Based on Current Mirrors Applied to pH Measurement Using ISFET Sensors

2009

New transconductance circuits (V/I converters) are designed based on current mirrors and operational amplifiers. Their input/output characteristics and the influence of DC parameters are obtained. Experimental results were performed, comparing them with the simulated results. An electronic instrumentation circuit is designed based on one of the transconductance converters analyzed. The purpose of this circuit was to condition the response of an ion-sensitive field-effect transistor (ISFET) to measure pH. In the proposed application, the V/I converter presented provides the stability and accuracy of the ISFET operating point, making an easy characterization procedure and the design of multic…

Materials sciencebusiness.industryTransconductanceTransistorElectrical engineeringConverterslaw.inventionCurrent mirrorlawOperational transconductance amplifierHardware_INTEGRATEDCIRCUITSElectronic engineeringOperational amplifierElectrical and Electronic EngineeringISFETbusinessInstrumentationElectronic circuitIEEE Transactions on Instrumentation and Measurement
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CNT-based RFID passive gas sensor

2011

Summary form only given, as follows. Single-wall carbon nanotube (CNT) is examined for the design of a passive and maintenance-free wireless RFID sensor. CNT buckypaper is characterized from a dielectric and a sensitivity point of view, using an indirect way, by using antenna measurement and simulations in a controlled medium. A CNT-based prototype RFID tag is then described as the featured maintenance free sensor and experimentally verified for its applicability and sensitivity towards NH3.

Materials sciencebusiness.industryrfid sensorAntenna measurementSettore ING-INF/02 - Campi ElettromagneticiBuckypaperHardware_PERFORMANCEANDRELIABILITYDielectricCarbon nanotubelaw.inventionNanosensorlawHardware_INTEGRATEDCIRCUITSElectronic engineeringWirelessSensitivity (control systems)businessWireless sensor networkHardware_LOGICDESIGN2011 IEEE MTT-S International Microwave Symposium
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A New Crowded Comparison Operator in Constrained Multiobjective Optimization for Capacitors Sizing and Siting in Electrical Distribution Systems

2005

This paper presents a new Crowded Comparison Operator (CCO) for NSGA-II to solve the Multiobjective and constrained problem of optimal capacitors placement in electrical distribution systems.

Mathematical optimizationComputer scienceMathematicsofComputing_NUMERICALANALYSISConstrained optimizationComputingMethodologies_ARTIFICIALINTELLIGENCEMulti-objective optimizationSizinglaw.inventionGenetic algorithm capacitor sizing and sitingSettore ING-IND/33 - Sistemi Elettrici Per L'EnergiaDistribution systemCapacitorOperator (computer programming)lawHardware_INTEGRATEDCIRCUITS
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Enhancing the Sniper Simulator with Thermal Measurement

2014

This paper presents the enhancement of the Sniper multicore / manycore simulator with thermal measurement possibilities using the HotSpot simulator. We present a plugin that interacts with Sniper to retrieve simulation data (integration areas and power consumptions) and calls HotSpot to compute the corresponding thermal results. The plugin also builds a two dimensional floorplan for the simulated microarchitecture. Furthermore we plan to integrate the simulation methodology presented here into an automatic design space exploration process using the multi-objective optimization tool called FADSE. Keywords—multicore; simulator; power consumption; thermal; HotSpot; Sniper

Multi-core processorEngineeringComputer architecture simulatorbusiness.industryDesign space explorationReal-time computingHardware_PERFORMANCEANDRELIABILITYcomputer.software_genreFloorplanMicroarchitecturePower consumptionThermalHardware_INTEGRATEDCIRCUITSPlug-inbusinesscomputerSimulation
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Nonlinear analysis of classical phase-locked loops in signal's phase space

2014

Abstract Discovery of undesirable hidden oscillations, which cannot be found by the standard simulation, in phase-locked loop (PLL) showed the importance of consideration of nonlinear models and development of rigorous analytical methods for their analysis. In this paper for various signal waveforms, analytical computation of multiplier/mixer phase-detector characteristics is demonstrated, and nonlinear dynamical model of classical analog PLL is derived. Approaches to the rigorous nonlinear analysis of classical analog PLL are discussed.

Multiplier (Fourier analysis)Phase-locked loopNonlinear systemControl theoryPhase spaceComputationHardware_INTEGRATEDCIRCUITSWaveformPhase detector characteristicHardware_PERFORMANCEANDRELIABILITYMultistabilityMathematicsIFAC Proceedings Volumes
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