Search results for "ELECTRICAL RESISTIVITY"
showing 10 items of 357 documents
Two-terminal nanoelectromechanical devices based on germanium nanowires.
2009
A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. …
Electromagnetic shielding efficiency in Ka-band: carbon foam versus epoxy/carbon nanotube composites
2012
The wide application of microwaves stimulates searching for new materials with high electrical conductivity and electromagnetic (EM) interference shielding effectiveness (SE). We conducted a comparative study of EM SE in K a -band demonstrated by ultra-light micro-structural porous carbon solids (carbon foams) of different bulk densities, 0.042 to 0.150 g/cm 3 , and conventional flexible epoxy resin filled with carbon nanotubes (CNTs) in small concentrations, 1.5 wt.%. Microwave probing of carbon foams showed that the transmission through a 2 mm-thick layer strongly decreases with decreasing the pore size up to the level of 0.6%, due to a rise of reflectance ability. At the same time, 1 mm…
High-temperature transport properties of La0.67Ca0.33MnO3 films
1999
Abstract The giant negative magnetoresistance in manganites has been investigated from the Curie temperature T c up to 600 K (2.6 T c ) in magnetic fields up to 8 T. Nonadiabatic small polaron hopping can successfully describe the temperature dependence of the resistivity. The magnetic field influence on the activation energy is explained by the interaction of unclustered ions with small spin clusters of four ions.
Magnetic properties of the TbMn2 single crystals
1999
Abstract Single crystals of TbMn 2 were grown by the Czochralski method from a levitated melt. Results of electrical resistivity, magnetization in strong magnetic fields along the principal crystallographic directions, AC and DC magnetic susceptibility and the temperature dependence of the lattice parameter are presented.
Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)
2010
The substitutional series of Heusler compounds ${\text{NiTi}}_{1\ensuremath{-}x}{M}_{x}\text{Sn}$ (where $M=\text{Sc},\text{V}$ and $0lx\ensuremath{\le}0.2$) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create $n$-type and $p$-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and compared to the measurements. Hard x-ray photoelectron spectroscopy was carried out and the results are compared to the calculated electronic structure. Pure NiTiSn exhibits massive ``in gap'' states containing about 0.1 ele…
Direct observation of Drude behavior in the heavy-fermion by broadband microwave spectroscopy
2005
Abstract Previous optical studies on the heavy-fermion system UPd 2 Al 3 down to frequencies of about 1 cm - 1 ( = 30 GHz ) revealed a well-pronounced pseudogap at low frequencies (below 3 cm - 1 ) that was attributed to magnetic correlations. Thus, the optical conductivity at even lower frequencies is of notable interest because the Drude roll-off (the high-frequency characteristic of a metal which will give information on the quasiparticle dynamics) remained hidden at extremely low frequencies. Using a novel cryogenic broadband microwave spectrometer employing the Corbino geometry we have studied the complex optical conductivity of UPd 2 Al 3 thin films in the frequency range from 45 MHz …
Thin film preparation of the low charge carrier density Kondo system CeSb
1999
Abstract We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 −2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly.
Electronic properties of *-oriented thin films
2007
Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.
Temperature Dependence of Electronic and Magnetic Properties of (DOEO)<sub>4</sub>[HgBr<sub>4</sub>]·TCE Single Crystals
2015
The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)4[HgBr4]·TCE was investigated using magnetometry. The magnetic susceptibility shows a maximum at 40 K followed by an onset of a pronounced increase at 70 K and a constant behavior above 120 K. Implications on the charge carrier density are discussed. Combining the magnetometry with resistivity and ESR measurements we propose a sequence of insulating, metallic and semiconducting behavior with increasing temperature. Our results indicate that (DOEO)4[HgBr4]·TCE is close to the boundary between an insulating and conducting ground state.
Tuning the carrier concentration for thermoelectrical application in the quaternary Heusler compound Co2TiAl(1−x)Six
2010
The family of half-metallic ferromagnets Co2TiZ exhibits exceptional transport properties. The investigated compounds Co2TiAl(1−x)Six (x = 0.25, 0.5, 0.75) show Curie temperatures (TCs) that vary between 250 and 350 K, depending on the composition. Above TC the Seebeck coefficient remains constant. This makes them promising candidates for thermoelectric devices such as thermocouples with a tunable working range. The electrical resistivity data show an anomaly at TC which is attributed to changes in the electronic structure and therefore in the carrier concentration.