Search results for "ELECTRICAL RESISTIVITY"
showing 10 items of 357 documents
Reduction of temperature coefficients in multicrystalline silicon solar cells after light-induced degradation
2015
This study focuses on the variations of the temperature coefficients after light-induced degradation (LID) of compensated multicrystalline silicon solar cells from three different ingots. The ingots have been chosen to see the effect of the compensation level, the resistivity and the impact of adding gallium to keep the resistivity as constant as possible along the ingot. The temperature coefficients of the efficiency experience a major decrease after LID on all ingots. We found that this decrease varies along the ingot height and does not correspond to the VOC drop. Moreover, no direct correlation with the interstitial oxygen concentration profiles could be seen.
Effective electrical conductivity of carbon nanotube–epoxy nanocomposites
2016
The electrical conductivity of carbon nanotube–epoxy composites is investigated analytically and experimentally. The theoretical predictions of the effective electrical conductivity of carbon nanotube–epoxy composites were performed by the analytical approach based on a micromechanical model of composites. The parametric analysis carried out revealed an influence of geometrical and electrical parameters of the micromechanical model on the effective electrical conductivity of carbon nanotube–epoxy nanocomposite. The nanocomposites made from the DGEBA-based and RTM6 epoxy resins filled with different weight content of Baytubes C150P and N7000 multi-walled carbon nanotubes were prepared. The …
Star-Shaped Conjugated Systems
2010
The present review deals with the preparation and the properties of star-shaped conjugated compounds. Three, four or six conjugated arms are attached to cross-conjugated cores, which consist of single atoms (B, C+, N), benzene or azine rings or polycyclic ring systems, as for example triphenylene or tristriazolotriazine. Many of these shape-persistent [n]star compounds tend to π-stacking and self-organization, and exhibit interesting properties in materials science: Linear and non-linear optics, electrical conductivity, electroluminescence, formation of liquid crystalline phases, etc.
Opportunity of metallic interconnects for ITSOFC : Reactivity and electrical property.
2006
International audience; Iron-base alloys (Fe-Cr) are proposed hereafter as materials for interconnect of planar-type intermediate temperature solid oxide fuel cell (ITSOFC); they are an alternative solution instead of the use of ceramic interconnects. These steels form an oxide layer (chrornia) which protects the interconnect from the exterior environment, but is an electrical insulator. One solution envisaged in this work is the deposition of a reactive element oxide coating, that slows down the formation of the oxide layer and that increases its electric conductivity. The oxide layer, formed at high temperature on the uncoated alloys, is mainly composed of chromia; it grows in accordance …
Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition
2011
The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 A/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities.
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
2008
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…
Validation of matrix diffusion modeling
2010
Abstract Crystalline rock has been chosen as the host medium for repository of highly radioactive spent nuclear fuel in Finland. Radionuclide transport takes place along water-carrying fractures, and matrix diffusion has been indicated as an important retarding mechanism that affects the transport of mobile fission and activation products. The model introduced here for matrix diffusion contains a flow channel facing a porous matrix with stagnant water into which tracer molecules advected in the channel can diffuse. In addition, the possibility of a finite depth of the matrix and an initial tracer distribution (‘contamination’) in the matrix are included in the model. In order to validate th…
ChemInform Abstract: NbNi2.38Te3, a New Metal-Rich Niobium Telluride with a “Stuffed” TaFe1+ xTe3 Structure.
2010
The authors report the synthesis, structure, and electrical properties of NbNi{sub 2.38}Te{sub 3}. The structure of the compound was determined by X-ray crystallography and the electric conductivity of the compound was measured.
High frequency resistivity in La2-xSrxCu1-yCoyO4 ceramics
2019
Resitivity measurements have been performed in La:Sr:Cu:Co:O ceramics in a frequency range from 5Hz – 10 9 Hz. A strongly frequency dependent resistance has been observed in La 2 CUO 4 which we interpret in terms of a smooth dielectric to metal transition due to localization effects.
Electrical Bistability around Room Temperature in an Unprecedented One-Dimensional Coordination Magnetic Polymer
2013
The synthesis, crystal structure, and physical properties of an unprecedented one-dimensional (1D) coordination polymer containing [Fe2(S2C6H2Cl2)4](2-) entities bridged by dicationic [K2(μ-H2O)2(THF)4](2+) units are described. The magnetic properties show that the title compound presents pairwise Fe-Fe antiferromagnetic interactions that can be well reproduced with a S = 1/2 dimer model with an exchange coupling, J = -23 cm(-1). The electrical conductivity measurements show that the title compound is a semiconductor with an activation energy of about 290 meV and two different transitions, both with large hysteresis of about 60 and 30 K at 260-320 K and 350-380 K, respectively. These two tr…